公开(公告)号：US5624867A

公开(公告)日：1997-04-29

申请号：US448670

申请日：1995-05-24

Applicant: Huang-Chung Cheng ,  Cheng-Tung Lin ,  Pei-Fen Chou

Inventor： Huang-Chung Cheng ,  Cheng-Tung Lin ,  Pei-Fen Chou

IPC: H01L21/225 ,  H01L21/283

CPC classification number: H01L21/28518 ,  H01L21/2257

Abstract: A low temperature process for forming palladium silicided shallow junctions in which ions are implanted into a palladium or a palladium silicide layer over a silicon substrate. The impurities are driven into the silicon substrate during the formation or recrystallization of the palladium silicide layer, and a diffusion region with shallow junction is formed in the substrate.

Abstract translation: 用于形成钯硅化物浅结的低温工艺，其中将离子注入到硅衬底上的钯或钯硅化物层中。 在硅化钯层的形成或重结晶过程中，杂质被驱入硅衬底，并且在衬底中形成具有浅结的扩散区。

公开(公告)号：USD368412S

公开(公告)日：1996-04-02

申请号：US36856

申请日：1995-03-29

Applicant: Cheng-Tung Lin

Designer： Cheng-Tung Lin