公开(公告)号：US20140339610A1

公开(公告)日：2014-11-20

申请号：US13893684

申请日：2013-05-14

Applicant: GLOBALFOUNDRIES INC.

Inventor： Mahbub Rashed ,  Juhan Kim ,  Yunfei Deng ,  Jongwook Kye ,  Suresh Venkatesan

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/785 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/6681

Abstract: Embodiments of the present invention provide a novel method and structure for forming finFET structures that comprise standard cells. An H-shaped cut mask is used to reduce the number of fins that need to be removed, hence increasing the fin efficiency.

Abstract translation: 本发明的实施例提供了用于形成包含标准单元的finFET结构的新颖方法和结构。 使用H形切割掩模来减少需要去除的翅片的数量，从而提高翅片效率。