Optical cross connection switch using voltage-controlled interferometric optical switching elements
    42.
    发明授权
    Optical cross connection switch using voltage-controlled interferometric optical switching elements 有权
    光交叉开关采用压控干涉光开关元件

    公开(公告)号:US06847755B2

    公开(公告)日:2005-01-25

    申请号:US10300114

    申请日:2002-11-20

    摘要: An optical switch comprising an array of voltage-controlled interferometric switching elements. Different configurations and modes of operation are possible, but in each configuration the elements are arranged relative to the input and output fibers, such that a beam of light is incident or outgoing at an angle of 45 degrees to the surface of a corresponding element. This permits each element to be electronically controlled to either transmit or reflect light, such that the output beam exits the switch either parallel to or perpendicular to the input beam.

    摘要翻译: 一种光开关,包括电压控制的干涉式开关元件阵列。 不同的配置和操作模式是可能的,但是在每个配置中,元件相对于输入和输出光纤布置,使得光束以相对于元件的表面成45度的角度入射或出射。 这允许每个元件被电子控制以发射或反射光,使得输出光束平行于或垂直于输入光束离开开关。

    Barrier layer for copper metallization in integrated circuit fabrication
    43.
    发明授权
    Barrier layer for copper metallization in integrated circuit fabrication 有权
    集成电路制造中铜金属化的阻挡层

    公开(公告)号:US06747353B2

    公开(公告)日:2004-06-08

    申请号:US09982655

    申请日:2001-10-18

    IPC分类号: H01L2348

    摘要: A barrier layer (20, 62) for an integrated circuit structure is disclosed. The barrier layer (20, 62) is a refractory metal silicon compound, such as a refractor metal silicon nitride compound, formed in an amorphous state. The barrier layer (20, 62) has a relatively low composition ratio of silicon, and of nitrogen if present, to provide low resistivity in combination with the high diffusion barrier properties provided by the amorphous state of the film. A disclosed example of the barrier layer (20, 62) is a compound of tantalum, silicon, and nitrogen, formed by controlled co-sputtering of tantalum and silicon in a gas atmosphere including nitrogen and argon. The barrier layer (20) may be used to underlie copper metallization (22), or the barrier layer (62) may be part or all of a lower plate in a ferroelectric memory capacitor (70).

    摘要翻译: 公开了一种用于集成电路结构的阻挡层(20,62)。 阻挡层(20,62)是形成为非晶状态的难熔金属硅化合物,例如折光金属氮化硅化合物。 阻挡层(20,62)具有相对较低的硅组成比和氮(如果存在),以提供低电阻率以及由膜的无定形状态提供的高扩散阻挡性能。 阻挡层(20,62)的公开实例是钽,硅和氮的化合物,其通过在包括氮和氩的气体气氛中的钽和硅的受控共溅射而形成。 阻挡层(20)可以用于铜金属化层(22),或阻挡层(62)可以是铁电存储电容器(70)中的下板的一部分或全部。

    Image forming method and apparatus using developer carrier pressed into engagement with image carrier
    44.
    发明授权
    Image forming method and apparatus using developer carrier pressed into engagement with image carrier 失效
    使用显影剂载体压制成与图像载体接合的图像形成方法和装置

    公开(公告)号:US06608984B1

    公开(公告)日:2003-08-19

    申请号:US09556968

    申请日:2000-04-24

    IPC分类号: G03G1508

    CPC分类号: G03G15/0818

    摘要: An image forming apparatus of the type which develops a latent image on an image carrier with toner stored in a developing unit and transferring the resulting toner image to a recording medium. The developing unit includes a developer carrier which contacts the image carrier at least at two spaced apart points with a gap being formed between the at least two points of contact. A moving mechanism will move opposite ends of the developer carrier independent distances relative to one another so as to eliminate the gap and establish full contact between the image carrier surface and developer carrier surface.

    摘要翻译: 一种图像形成装置,其类型是利用存储在显影单元中的调色剂在图像载体上显影潜像并将所得到的调色剂图像转印到记录介质上。 显影单元包括显影剂载体,其至少在两个间隔开的点处接触图像载体,在至少两个接触点之间形成间隙。 移动机构将相对于彼此移动显影剂载体的相对端,以消除间隙并建立图像载体表面和显影剂载体表面之间的完全接触。

    Contact structure with an oxide silicidation barrier
    45.
    发明授权
    Contact structure with an oxide silicidation barrier 有权
    具有氧化物硅化物屏障的接触结构

    公开(公告)号:US06303952B1

    公开(公告)日:2001-10-16

    申请号:US09226238

    申请日:1999-01-05

    IPC分类号: H01L2976

    摘要: A ferroelectric capacitor electrode contact structure comprising an insulator (304) placed over a substrate (302), the insulator (304) containing a source plug (310) and a drain contact (312). An upper plug layer (322) is place over and electrically connected to a drain contact (312). A multi-component oxide layer (324) is placed over an upper plug layer (322). A bottom electrode (326) is placed over a multi-component oxide layer 324. Multi-component oxide layer (324) prevents the silicidation of the bottom electrode (326) of a ferroelectric capacitor electrode contact structure while surprisingly maintaining an ohmic contact from the substrate (302) through the drain contact (312) through the upper plug layer (322) through the multi-component oxide layer (324) to the bottom electrode 326.

    摘要翻译: 一种铁电电容器电极接触结构,包括放置在衬底(302)上的绝缘体(304),所述绝缘体(304)包含源极插塞(310)和漏极接触件(312)。 上塞子层(322)放置在漏极触点(312)上并电连接到漏极触点(312)。 多组分氧化物层(324)放置在上部塞子层(322)的上方。 底部电极(326)放置在多组分氧化物层324上。多组分氧化物层(324)防止铁电电容器电极接触结构的底部电极(326)的硅化,同时令人惊奇地保持来自 衬底(302)穿过穿过上部插塞层(322)的漏极接触(312)穿过多组分氧化物层(324)到底部电极326。

    Image forming method and apparatus for the same
    47.
    发明授权
    Image forming method and apparatus for the same 失效
    图像形成方法及装置

    公开(公告)号:US5424809A

    公开(公告)日:1995-06-13

    申请号:US31015

    申请日:1993-03-11

    IPC分类号: G03G15/00 G03G15/01 G03G21/00

    摘要: An image forming method and an apparatus therefor applicable to a color copier. A signal value representative of a reflection and appearing when the output of a photosensor is minimum in response to a change in the amount of toner deposition on a photoconductive element is detected. This maintains the density of a predetermined reference pattern used to sense an image density constant despite the change in, for example, the reflection characteristic of the photoconductive element. A bias for development is so changed as to maintain the output of the photosensor constant, so that the effective bias remains constant relative to the charge potential on the photoconductive element.

    摘要翻译: 一种适用于彩色复印机的成像方法及其装置。 检测出响应于光电导元件上的调色剂沉积量的变化而使光电传感器的输出最小时的反射和出现的信号值。 尽管例如光电导元件的反射特性发生变化,仍然保持用于感测图像密度常数的预定参考图案的浓度。 为了保持光电传感器的输出恒定,发展的偏向被改变,使得有效偏置相对于光导元件上的电荷电位保持恒定。

    Image forming apparatus for controlling the dynamic range of an image
    48.
    发明授权
    Image forming apparatus for controlling the dynamic range of an image 失效
    用于控制图像的动态范围的图像形成装置

    公开(公告)号:US5293198A

    公开(公告)日:1994-03-08

    申请号:US742896

    申请日:1991-08-08

    IPC分类号: G03G15/00 G03G15/08 G03G21/00

    摘要: An image forming apparatus has a photoconductive element, a developing sleeve, a photosensor and a control device for controlling the dynamic range of an image. A background output VSG is produced from the photosensor when the photoconductive element is rotating and the developing sleeve is rotating and a background output VSG+ is produced from the photosensor when the photoconductive element is rotating and the developing sleeve is not rotating. The control device controls a developing bias, a charge potential, a quantity of exposing light or an amount of toner supply in response to the greater of the two values VSG or VSG+. Also, the gradient of the background output VSG is determined and is used to decide whether the image forming apparatus is in an unusual state or not.

    摘要翻译: 图像形成装置具有感光元件,显影套筒,光电传感器和用于控制图像的动态范围的控制装置。 当光电导元件旋转并且显影套筒旋转时,从光电传感器产生背景输出VSG,并且当感光元件旋转并且显影套筒不旋转时,从光电传感器产生背景输出VSG +。 响应于两个值VSG或VSG +中的较大值,控制装置控制显影偏压,电荷电位,曝光量或调色剂供应量。 此外,确定背景输出VSG的梯度,并用于判定图像形成装置是否处于非正常状态。

    Ferroelectric memory with bipolar drive pulses
    49.
    发明授权
    Ferroelectric memory with bipolar drive pulses 有权
    带双极驱动脉冲的铁电存储器

    公开(公告)号:US06363002B1

    公开(公告)日:2002-03-26

    申请号:US09224616

    申请日:1998-12-31

    IPC分类号: G11C1122

    CPC分类号: G11C11/22

    摘要: An FeRAM in which sensing occurs without a dummy cell, using an unselected bitline as a reference. The read cycle includes two opposed pulses on the drive line: the first pulse provides a data-dependent signal out of the selected cell, and the second pulse restores the bit line to a level such that the DC bias voltage on an unselected bitline provides an optimal reference.

    摘要翻译: 在不使用虚拟单元的情况下,使用未选择的位线作为参考的FeRAM。 读周期在驱动线上包括两个相对的脉冲:第一个脉冲从所选择的单元提供数据相关的信号,第二个脉冲将位线恢复到一个电平,使得未选择的位线上的直流偏置电压提供 最佳参考。

    Ferroelectric memory and method
    50.
    发明授权
    Ferroelectric memory and method 有权
    铁电记忆和方法

    公开(公告)号:US06275408B1

    公开(公告)日:2001-08-14

    申请号:US09605933

    申请日:2000-06-28

    IPC分类号: G11C1122

    CPC分类号: G11C11/22

    摘要: Ferroelectric memory with one-capacitor/one-transistor cells and a reference cell with double the capacitance plus a sense amplifier for comparing transient currents in resistors at the sense amplifier inputs. The reference cell includes a diode to prevent reference capacitor polarization switching.

    摘要翻译: 具有单电容/单晶体管单元的铁电存储器和具有两倍电容的参考电池,以及用于比较读出放大器输入端的电阻中的瞬态电流的读出放大器。 参考单元包括用于防止参考电容器偏振切换的二极管。