公开(公告)号：US09929250B1

公开(公告)日：2018-03-27

申请号：US15277722

申请日：2016-09-27

Applicant: International Business Machines Corporation

Inventor： Victor Chan ,  Jin Ping Han

IPC: H01L29/66 ,  H01L29/49

CPC classification number: H01L29/66545 ,  H01L29/42376 ,  H01L29/4966

Abstract: A semiconductor device is provided with an electrically conductive gate having an enhanced gate profile. The semiconductor device includes a semiconductor substrate that extends along a first axis to define a length and a second axis opposite the first axis to define a height. A channel region is interposed between opposing source/drain regions, and a gate stack is atop the semiconductor substrate. The gate stack includes an electrically conductive gate atop the channel region. The electrically conductive gate includes sidewalls extending between a base and an upper surface to define a gate height. A gate length of the electrically conductive gate continuously increases as the gate height increases from the base to the upper surface.

公开(公告)号：US20180039881A1

公开(公告)日：2018-02-08

申请号：US15228653

申请日：2016-08-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Martin M. Frank ,  Jin Ping Han ,  Masatoshi Ishii ,  Timothy Phung ,  Aakash Pushp

IPC: G06N3/063 ,  G06N3/04

CPC classification number: G06N3/0635 ,  G06N3/084

Abstract: A tunable resistance device and methods of forming the same include a magnetic fixed layer having a fixed magnetization, a magnetic free layer, and a non-magnetic conductive layer directly between the magnetic fixed layer and the magnetic free layer. The magnetic fixed layer, the magnetic free layer, and the non-magnetic conductive layer are formed in a lattice of wires, with each wire in the lattice being formed from a stack of the magnetic fixed layer, the magnetic free layer, and the non-magnetic conductive layer.