公开(公告)号：US20130341771A1

公开(公告)日：2013-12-26

申请号：US14011885

申请日：2013-08-28

Applicant: Infineon Technologies AG

Inventor： Andre Schmenn ,  Damian Sojka ,  Carsten Ahrens

IPC: H01L29/868 ,  H01L29/66

CPC classification number: H01L27/0255 ,  H01L21/22 ,  H01L21/265 ,  H01L29/66121 ,  H01L29/868

Abstract: A protective structure may include: a semiconductor substrate having a doping of a first conductivity type; a semiconductor layer having a doping of a second conductivity type arranged at a surface of the semiconductor substrate; a buried layer having a doping of the second conductivity type arranged in a first region of the semiconductor layer and at the junction between the semiconductor layer and the semiconductor substrate; a first dopant zone having a doping of the first conductivity type arranged in the first region of the semiconductor layer above the buried layer; a second dopant zone having a doping of the second conductivity type arranged in a second region of the semiconductor layer; an electrical insulation arranged between the first region and the second region of the semiconductor layer; and a common connection device for the first dopant zone and the second dopant zone.

Abstract translation: 保护结构可以包括：具有第一导电类型的掺杂的半导体衬底; 具有布置在所述半导体衬底的表面处的第二导电类型的掺杂的半导体层; 具有布置在所述半导体层的第一区域中以及所述半导体层和所述半导体衬底之间的接合处的掺杂所述第二导电类型的掩埋层; 第一掺杂区，其具有布置在所述半导体层的所述第一区域之上的所述第一导电类型的掺杂; 具有布置在所述半导体层的第二区域中的所述第二导电类型的掺杂的第二掺杂区; 布置在半导体层的第一区域和第二区域之间的电绝缘体; 以及用于第一掺杂区和第二掺杂区的公共连接装置。