公开(公告)号：US20170353162A1

公开(公告)日：2017-12-07

申请号：US15683859

申请日：2017-08-23

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yuri HONDA

IPC: H03F1/32 ,  H03F3/19 ,  H03F3/21

CPC classification number: H03F1/32 ,  H03F3/19 ,  H03F3/21 ,  H03F2200/411 ,  H03F2200/451 ,  H03F2200/555

Abstract: A power amplification circuit includes: a first output transistor that has a power supply voltage supplied to its collector or drain, has a common emitter or source, amplifies an input signal supplied to its base or gate and outputs a first amplified signal from its collector or drain; a first transistor that has the power supply voltage supplied to its collector or drain, has a first current supplied to its base or gate and supplies a first bias current to the base or gate of the first output transistor from its emitter or source; and a second transistor that has its collector or drain connected to the base or gate of the first transistor, has a second current supplied to its base or gate and supplies a second bias current to the base or gate of the first output transistor from its emitter or source.