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公开(公告)号：US20230378915A1
公开(公告)日：2023-11-23
申请号：US18135061
申请日：2023-04-14
IPC分类号： H03F1/32 , H03F1/56 , H03F1/02 , H03F1/22 , H03F3/191 , H03F3/24 , H04L25/02 , H04B1/04 , H04L27/04 , H03F3/19 , H03F3/21 , H04B1/40
CPC分类号： H03F1/32 , H03F1/56 , H03F1/0227 , H03F1/22 , H03F3/191 , H03F3/245 , H04L25/0278 , H03F3/24 , H04B1/0475 , H04L27/04 , H03F3/19 , H03F3/21 , H04B1/40 , H03F1/0211 , H03F2200/451 , H03F2200/555 , H03F1/30
摘要： The present disclosure relates to devices and methods for detecting and preventing occurrence of a saturation state in a power amplifier. A power amplifier module can include a power amplifier including a cascode transistor pair. The cascode transistor pair can include a first transistor and a second transistor. The power amplifier module can include a current comparator configured to compare a first base current of the first transistor and a second base current of the second transistor to obtain a comparison value. The power amplifier module can include a saturation controller configured to supply a reference signal to an impedance matching network based on the comparison value. The impedance matching network can be configured to modify a load impedance of a load line in electrical communication with the power amplifier based at least in part on the reference signal.
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2.发明公开公开(公告)号：US20230143127A1
公开(公告)日：2023-05-11
申请号：US17453967
申请日：2021-11-08
发明人： Todd Morgan RASMUS , Shih-Wei CHOU
CPC分类号： H03F3/45183 , H03F1/0227 , H03F2200/453 , H03F2200/456 , H03F2200/555 , H03F2200/91 , H03F2203/45008
摘要： Aspects of the present disclosure provide a method for regulating an integration current of a sensing amplifier. The sensing amplifier includes a first input transistor and a second input transistor, wherein a source of the first input transistor and a source of the second input transistor are coupled to a source node. The method includes pulling a current from or sourcing the current to the source node, measuring the integration current, comparing the measured integration current with a reference signal, and adjusting the current pulled from or sourced to the source node based on the comparison.
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公开(公告)号：US20190190456A1
公开(公告)日：2019-06-20
申请号：US15843922
申请日：2017-12-15
申请人： Raytheon Company
CPC分类号： H03F1/0222 , H01L29/2003 , H03F1/223 , H03F1/306 , H03F3/193 , H03F3/345 , H03F2200/18 , H03F2200/451 , H03F2200/555 , H03M1/742
摘要： A circuit having (A) a transistor, (B) a bias circuit for providing setting a bias current for the transistor, the bias current having a current level in accordance with a reference current fed to the bias circuit; and (C) a bias current level controller, comprising: (i) a plurality of switches, each one of the switches comprises: a MOS FET and a GaN FET connected in a cascode configuration; and (ii) current source circuitry, comprising a plurality of current sources, each one of the current sources being connected between a voltage source and a corresponding one of the plurality of switches, the current source circuit combining currents produced by the current source in response a binary control signal fed to a gate of the MOS FET, the combined current providing the reference current fed to the bias circuit.
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公开(公告)号：US20190052233A1
公开(公告)日：2019-02-14
申请号：US16162954
申请日：2018-10-17
发明人： Masatoshi HASE
IPC分类号： H03F1/30 , H03F3/24 , H01L29/08 , H01L29/737 , H03F3/19 , H03F3/191 , H03F3/195 , H03G3/30 , H01L23/66 , H04B1/04 , H04W88/02
CPC分类号： H03F1/302 , H01L23/66 , H01L29/0804 , H01L29/737 , H03F3/19 , H03F3/191 , H03F3/195 , H03F3/24 , H03F3/245 , H03F2200/18 , H03F2200/447 , H03F2200/451 , H03F2200/555 , H03G3/3042 , H04B2001/0408 , H04W88/02
摘要： A power amplification module includes: a first bipolar transistor in which a radio frequency signal is input to a base and an amplified signal is output from a collector; a second bipolar transistor that is thermally coupled with the first bipolar transistor and that imitates operation of the first bipolar transistor; a third bipolar transistor in which a first control voltage is supplied to a base and a first bias current is output from an emitter; a first resistor that generates a third control voltage corresponding to a collector current of the second bipolar transistor at a second terminal; and a fourth bipolar transistor in which a power supply voltage is supplied to a collector, the third control voltage is supplied to a base, and a second bias current is output from an emitter.
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公开(公告)号：US20180351518A1
公开(公告)日：2018-12-06
申请号：US16011803
申请日：2018-06-19
发明人： Satoshi GOTO
CPC分类号： H03F1/565 , H03F3/195 , H03F3/21 , H03F3/245 , H03F2200/108 , H03F2200/18 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/411 , H03F2200/451 , H03F2200/555
摘要： A power amplification circuit that includes: a capacitor element in which a first metal layer, a first insulating layer, a second metal layer, a second insulating layer and a third metal layer are sequentially stacked, the capacitor element including a first capacitor in which the first metal layer serves as one electrode thereof and the second metal layer serves as another electrode thereof, and a second capacitor in which the second metal layer serves as one electrode thereof and the third metal layer serves as another electrode thereof; and a transistor that amplifies a radio-frequency signal. The radio-frequency signal is supplied to the one electrode of the first capacitor. The other electrode of the first capacitor and the one electrode of the second capacitor are connected to a base of the transistor, and the other electrode of the second capacitor is connected to the emitter of the transistor.
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公开(公告)号：US20180294778A1
公开(公告)日：2018-10-11
申请号：US16008054
申请日：2018-06-14
发明人： Chih-Sheng Chen , Chang-Yi Chen
CPC分类号： H03F1/56 , H03F1/0277 , H03F1/223 , H03F3/16 , H03F3/193 , H03F3/72 , H03F2200/294 , H03F2200/387 , H03F2200/555 , H03F2203/7239
摘要： An amplifier includes an input terminal for receiving an input signal, an output terminal for outputting an output signal, a first transistor, a second transistor having a first terminal coupled to a second terminal of the first transistor, a third transistor having a first terminal coupled to a second terminal of the second transistor, a capacitor coupled between a control terminal and a second terminal of the third transistor, a bias circuit coupled to the first terminal of the third transistor for providing a bias voltage to the third transistor, a fourth transistor having a first terminal coupled to the input terminal and a second terminal coupled to the output terminal for providing a bypass path, and a fifth transistor having a first terminal coupled to the first terminal of the first transistor and a second terminal coupled to the output terminal.
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公开(公告)号：US20180254746A1
公开(公告)日：2018-09-06
申请号：US15882933
申请日：2018-01-29
申请人： pSemi Corporation
发明人： David Kovac
CPC分类号： H03F1/0222 , G05F1/56 , H03F1/0266 , H03F1/223 , H03F3/193 , H03F3/195 , H03F3/21 , H03F3/245 , H03F2200/18 , H03F2200/375 , H03F2200/451 , H03F2200/555 , H03F2200/61 , H03G1/0023 , H03G1/0029 , H03G1/007
摘要： Systems, methods and apparatus for efficient power control of an RF amplifier for amplification of a constant envelope RF signal are described. A reduction in a size of a pass device of an LDO regulator is obtained by removing the pass device of the LDO regulator from a main current conduction path of the RF amplifier. Power control is provided by varying one or more gate voltages to cascoded transistors of a transistor stack of the RF amplifier according to a power control voltage. Various configurations for controlling the gate voltages are presented by way of a smaller size LDO regulator or by completely removing the LDO regulator. In a case where a supply voltage to the transistor stack varies, such as in a case of a battery, a compensation circuit is used to adjust the power control voltage in view of a variation of the supply voltage, and therefore null a corresponding drift in output power of the RF amplifier.
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公开(公告)号：US20180198426A1
公开(公告)日：2018-07-12
申请号：US15860554
申请日：2018-01-02
申请人： INTEL CORPORATION
发明人： John G. Kauffman
CPC分类号： H03F3/245 , H03F3/195 , H03F3/3022 , H03F3/45183 , H03F3/45273 , H03F2200/294 , H03F2200/451 , H03F2200/456 , H03F2200/462 , H03F2200/555 , H04B1/0475 , H04B7/0413 , H04B2001/045
摘要： An apparatus is provided which comprises: a differential input amplifying stage including a current source and a first node; a first matched pair of transistors coupled to the first node, wherein one of the transistors of the first matched pair is coupled to an output node of a driving stage; a second matched pair of transistors coupled to a second node to bias the second matched pair of transistors, wherein one of the transistors of the second matched pair of transistors is coupled to the output node of the driving stage, and wherein the second node is to be charged according to a first bias of the current source; and a resistive device coupled to the first and second nodes.
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公开(公告)号：US20180191308A1
公开(公告)日：2018-07-05
申请号：US15718079
申请日：2017-09-28
发明人： CHIH-SHENG CHEN , HONG-JIA LO
CPC分类号： H03F1/0216 , H03F1/0261 , H03F1/302 , H03F1/32 , H03F1/56 , H03F3/19 , H03F3/193 , H03F3/21 , H03F3/45183 , H03F3/45475 , H03F2200/18 , H03F2200/294 , H03F2200/451 , H03F2200/555
摘要： An amplifier device includes an amplifying unit, a bias module and an impedance unit. A first end of the amplifying unit electronically connects to a voltage source. A second end of the amplifying unit receives an input signal. The first end of the amplifying unit outputs an output signal amplified by the amplifying unit. A third end of the amplifying unit connects to a first reference potential. The bias module electrically connects to the second end of the amplifying unit for providing a bias voltage to the amplifying unit. An impedance unit is electrically connects to the bias module. An impedance value of the impedance unit is variable. The bias module adjusts the amplifier's linearity according to a frequency value of the input signal, a voltage value of the voltage source or a temperature value of the amplifier device. The impedance is adjusted according to the above-mentioned values.
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公开(公告)号：US20180123535A1
公开(公告)日：2018-05-03
申请号：US15336091
申请日：2016-10-27
申请人： Analog Devices, Inc.
发明人： Yukihisa Handa , Nathan R. Carter
IPC分类号： H03F3/45
CPC分类号： H03F3/4508 , H03F3/45475 , H03F2200/555 , H03F2203/45116 , H03F2203/45151 , H03F2203/45202
摘要： The present disclosure provides systems and methods to provide a constant common mode voltage at the input terminals of a difference amplifier. A difference amplifier can receive an input signal and can deliver an amplified version of the received input signal at an output of the difference amplifier. In a system where a difference amplifier can receive an output of a digital-to-analog converter (DAC), the DAC performance can deteriorate in situations where common mode voltage at the input terminals of the difference amplifier are changing. A difference amplifier including feedback circuitry can provide a constant common mode voltage at the input terminals of the difference amplifier, leading to improved performance in a system where the difference amplifier receives an input signal from a DAC.
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