METHOD OF FORMING AN INTERCONNECT STRUCTURE
    41.
    发明申请
    METHOD OF FORMING AN INTERCONNECT STRUCTURE 有权
    形成互连结构的方法

    公开(公告)号:US20100105202A1

    公开(公告)日:2010-04-29

    申请号:US12444677

    申请日:2007-10-05

    申请人: Roel Daamen

    发明人: Roel Daamen

    IPC分类号: H01L21/768

    摘要: A method of forming an interconnect structure in a semiconductor device in which via holes (62) defined in a dielectric layer are filled with a filler material (64), such as a porogen material, before a further dielectric layer (66) is deposited thereover. Trenches (72) are formed in the further dielectric layer and then the filler material exposed thereby in the via holes is removed. The method provides a robust process which affords improved via and trench profile control.

    摘要翻译: 在半导体器件中形成互连结构的方法,其中在介质层(62)中限定的通孔(62)填充有诸如致孔剂材料的填充材料(64),之后在其上沉积另外的电介质层(66) 。 沟槽(72)形成在另外的电介质层中,然后去除在通孔中暴露的填充材料。 该方法提供了一个强大的过程,它提供改进的通孔和沟槽轮廓控制。

    ELECTRIC DEVICE WITH PHASE CHANGE RESISTOR
    42.
    发明申请
    ELECTRIC DEVICE WITH PHASE CHANGE RESISTOR 有权
    具有相变电阻的电器件

    公开(公告)号:US20090127537A1

    公开(公告)日:2009-05-21

    申请号:US12294020

    申请日:2007-03-21

    IPC分类号: H01L47/00

    摘要: An electric device has an electrically switchable resistor (2′) comprising a phase change material. The resistance value of the resistor can be changed between at least two values by changing the phase of the phase change material within a part of the resistor called the switching zone (12′) using Joule heating of the resistor. The device comprises a body (24′) encapsulating the resistor, which body comprises at least two abutting regions (26′, 28′) having different thermally insulating properties. These regions form a thermally insulating contrast with which the dimension of the switching zone can be determined without having to alter the dimensions of the resistor. Such a device can be used in electronic memory or reconfigurable logic circuits.

    摘要翻译: 电气装置具有包括相变材料的电可开关电阻器(2')。 通过使用电阻器的焦耳加热来改变称为开关区(12')的电阻器的一部分内的相变材料的相位,可以在至少两个值之间改变电阻器的电阻值。 该装置包括封装电阻器的本体(24'),该主体包括具有不同绝热性能的至少两个邻接区域(26',28')。 这些区域形成隔热对比度,可以确定开关区域的尺寸,而不必改变电阻器的尺寸。 这种装置可用于电子存储器或可重新配置的逻辑电路中。