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    ELECTRONIC DEVICE COMPRISING COUPLING MEMBER
    42.
    发明公开
    ELECTRONIC DEVICE COMPRISING COUPLING MEMBER 审中-公开

    公开(公告)号：US20240069494A1

    公开(公告)日：2024-02-29

    申请号：US18505648

    申请日：2023-11-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Donghyun KIM

    IPC: G04B37/14 ,  A44C5/14 ,  G04G99/00

    CPC classification number: G04B37/1486 ,  A44C5/147 ,  G04G99/006

    Abstract: An electronic device is provided. The electronic device includes a housing, at least one coupling member configured to be connected to the housing, a bracket disposed between the housing and the at least one coupling member and including a first through hole and a second through hole, and a connecting member at least partially disposed within the at least one coupling member, wherein the connecting member includes a first protruding area configured to be inserted into the first through hole and a second protruding area configured to be inserted into the second through hole, wherein the first protruding area is configured to rotate within a first angular range in the first through hole, and the second protruding area is configured to rotate within the first angular range in the second through hole.

    IMAGE SENSOR
    43.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20230282669A1

    公开(公告)日：2023-09-07

    申请号：US18155868

    申请日：2023-01-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Doowon KWON ,  Junghye KIM ,  Donghyun KIM ,  Minho JANG

    IPC: H01L27/146 ,  H01L23/00

    CPC classification number: H01L27/14636 ,  H01L24/08 ,  H01L24/80 ,  H01L27/14634 ,  H01L27/1469 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896

    Abstract: An image sensor includes a first structure and a second structure stacked on the first structure in a vertical direction, the first structure including first and second pixel pads electrically connected to first and second floating diffusion regions, respectively, and a first coupling suppression line penetrating between the first and second pixel pads, and electrically connected to the first ground structure, and the second structure including third and fourth pixel pads electrically connected to first and second source-follower gates, respectively; and a second coupling suppression line penetrating between the third and fourth pixel pads, and electrically connected to the second ground structure.

    DISPLAY DEVICE AND OPERATING METHOD OF THE SAME
    44.
    发明申请
    DISPLAY DEVICE AND OPERATING METHOD OF THE SAME 有权

    公开(公告)号：US20230114954A1

    公开(公告)日：2023-04-13

    申请号：US17887236

    申请日：2022-08-12

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyunseung LEE ,  Donghyun KIM ,  Younghoon JEONG

    IPC: G06T3/40 ,  G06V10/25

    Abstract: A display device for performing image processing by using a neural network including a plurality of layers, may obtain a plurality of pieces of model information respectively corresponding to pixels included in a first image based on object features respectively corresponding to the pixels; identify the plurality of pieces of model information respectively corresponding to the plurality of layers and the pixels input to the neural network based on information about a time point at which each of the pixels is processed in the neural network; update parameters of the plurality of layers, based on the plurality of pieces of model information; and obtain a second image by processing the first image via the plurality of layers to which the updated parameters are applied; and display the second image.

    SPEAKER MODULE MOUNTING STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE SAME
    45.
    发明申请
    SPEAKER MODULE MOUNTING STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE SAME 有权

    公开(公告)号：US20220345802A1

    公开(公告)日：2022-10-27

    申请号：US17726770

    申请日：2022-04-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Donghyun KIM ,  Youngbae PARK ,  Juyoung YU ,  Nammin JO ,  Joonrae CHO

    IPC: H04R1/02

    Abstract: According to certain embodiments, an apparatus comprises: an upper case facing a first direction; a lower case facing a second direction opposite to the first direction, the lower case coupled to the upper case, thereby forming an internal space; a speaker module disposed in the internal space, wherein the speaker module includes:
    a speaker; a bracket surrounding at least a part of the speaker, the bracket comprising: a first opening positioned to receive sound generated from the speaker; at least one first part coupled with the upper case; and at least one second part coupled with the lower case; at least one first sealing member disposed on the at least one first part of the bracket and sealing the bracket and the upper case; and a second sealing member disposed on the at least one second part of the bracket and sealing the bracket and the lower case.

    ELECTRONIC APPARATUS AND CONTROL METHOD THEREOF
    47.
    发明申请
    ELECTRONIC APPARATUS AND CONTROL METHOD THEREOF 审中-公开

    公开(公告)号：US20190281310A1

    公开(公告)日：2019-09-12

    申请号：US16292655

    申请日：2019-03-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

    Inventor： Hyunseung LEE ,  Donghyun KIM ,  Youngsu MOON ,  Taegyoung AHN ,  Yoonsik KIM ,  Jaewoo PARK ,  Jae Woong SOH ,  Nam Ik CHO ,  Byeongyong AHN

    IPC: H04N19/176 ,  H04N19/137 ,  G06N3/02 ,  G06K9/40

    Abstract: An electronic apparatus is provided. The electronic apparatus includes a storage configured to store a compression rate network model configured to determine a compression rate applied to an image block from among a plurality of compression rates, and a plurality of compression noise removing network models configured to remove compression noise for each of the plurality of compression rates, and a processor configured to: obtain a compression rate of each of a plurality of image blocks included in a frame of a decoded moving picture based on the compression rate network model, obtain the compression rate of the frame based on the plurality of obtained compression rates, and remove compression noise of the frame based on a compression noise removing network model corresponding to the compression rate of the frame from among the plurality of compression noise removing network models. The compression rate network model can be obtained by learning image characteristics of a plurality of restored image blocks corresponding to each of the plurality of compression rates through a first artificial intelligence algorithm, and the plurality of restored image blocks can be generated by encoding a plurality of original image blocks, and decoding the encoded plurality of original image blocks, and the plurality of compression noise removing network models can be obtained by learning a relation between the plurality of original image blocks and the plurality of restored image blocks through a second artificial intelligence algorithm.

    SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
    48.
    发明申请
    SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF 审中-公开

    公开(公告)号：US20190074223A1

    公开(公告)日：2019-03-07

    申请号：US16183245

    申请日：2018-11-07

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Heedon JEONG ,  Jae Yup CHUNG ,  Heesoo KANG ,  Donghyun KIM ,  Sanghyuk HONG ,  Soohun HONG

    IPC: H01L21/8234 ,  H01L29/78 ,  H01L29/66 ,  H01L27/088 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/285

    Abstract: A semiconductor device includes a fin region with long and short sides, a first field insulating layer including a top surface lower than that of the fin region and adjacent to a side surface of the short side of the fin region, a second field insulating layer including a top surface lower than that of the fin region and adjacent to a side surface of the long side of the fin region, an etch barrier pattern on the first field insulating layer, a first gate on the fin region and the second field insulating layer to face a top surface of the fin region and side surfaces of the long sides of the fin region. A second gate is on the etch barrier pattern overlapping the first field insulating layer. A source/drain region is between the first gate and the second gate, in contact with the etch barrier pattern.

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