公开(公告)号：US20200058688A1

公开(公告)日：2020-02-20

申请号：US16390325

申请日：2019-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doowon KWON ,  Ingyu BAEK

IPC: H01L27/146 ,  H01L27/148

Abstract: Disclosed is an image sensor comprising a first substrate including a plurality of pixels, a photoelectric conversion region in the first substrate at each of the pixels, a first capacitor on the first substrate, and a shield structure spaced apart from and surrounding the first capacitor.

公开(公告)号：US20250031476A1

公开(公告)日：2025-01-23

申请号：US18669876

申请日：2024-05-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minho JANG ,  Jonghyun GO ,  Doowon KWON ,  Changkyu LEE ,  Yongkun JO

IPC: H01L27/146 ,  H01L23/00 ,  H01L23/522 ,  H04N25/79

Abstract: An image sensor includes a first semiconductor chip including a first semiconductor substrate including a plurality of pixels and a first wiring structure having a first bonding pad; a second semiconductor chip including a second semiconductor substrate having pixel signal generator circuits, a second wiring structure on the second semiconductor substrate and having an upper bonding pad bonded to the first bonding pad, a back side insulating layer on a lower surface of the second semiconductor substrate and including a shielding metal pattern buried therein, and a conductive through-via penetrating the back side insulating layer and the first semiconductor substrate, and a third semiconductor chip including a bonding layer having a lower bonding pad connected to the conductive through via, a third semiconductor substrate including logic devices, and a third wiring structure having a third bonding pad bonded to the lower bonding pad.

公开(公告)号：US20240363665A1

公开(公告)日：2024-10-31

申请号：US18384025

申请日：2023-10-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minho JANG ,  Doowon KWON ,  Doyeon KIM ,  GwideokRyan LEE ,  Kyungtae LIM

IPC: H01L27/146 ,  H01L21/768 ,  H01L23/00 ,  H01L23/48

CPC classification number: H01L27/14634 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/08 ,  H01L27/14636 ,  H01L2224/08145

Abstract: A semiconductor device includes a first substrate having a first semiconductor layer with a first electronic element, a first insulation layer on the first semiconductor layer, a first conductive pad in the first insulation layer and exposed through a first side of the first substrate, and a first wire in the first insulation layer connected to the first semiconductor layer, and a second substrate attached to the first side of the first substrate and having a second semiconductor layer with a second electronic element, a second insulation layer on the second semiconductor layer, a second wire in the second insulation layer, a through via penetrating the second semiconductor layer and connected to the second wire, and a second conductive pad connecting the through via and the first conductive pad of the first substrate, at least a part of the second conductive pad being in the second semiconductor layer.

公开(公告)号：US20230282669A1

公开(公告)日：2023-09-07

申请号：US18155868

申请日：2023-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doowon KWON ,  Junghye KIM ,  Donghyun KIM ,  Minho JANG

IPC: H01L27/146 ,  H01L23/00

CPC classification number: H01L27/14636 ,  H01L24/08 ,  H01L24/80 ,  H01L27/14634 ,  H01L27/1469 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: An image sensor includes a first structure and a second structure stacked on the first structure in a vertical direction, the first structure including first and second pixel pads electrically connected to first and second floating diffusion regions, respectively, and a first coupling suppression line penetrating between the first and second pixel pads, and electrically connected to the first ground structure, and the second structure including third and fourth pixel pads electrically connected to first and second source-follower gates, respectively; and a second coupling suppression line penetrating between the third and fourth pixel pads, and electrically connected to the second ground structure.

公开(公告)号：US20240178259A1

公开(公告)日：2024-05-30

申请号：US18354040

申请日：2023-07-18

Applicant: Samsung Electronics Co,, Ltd.

Inventor： Doowon KWON ,  Minho JANG ,  Kyungtae LIM ,  Doyeon KIM ,  Haejung LEE

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687

Abstract: The inventive concepts provide a three-layered stacked image sensor in which misalignment between a through electrode and a pad is reduced and coupling noise between adjacent pads is reduced, and methods of manufacturing the same. The three-layered stacked image sensor includes an upper chip including pixels arranged in a two-dimensional array structure and a first wiring layer, each of pixels including a photodiode, a transfer gate, and a floating diffusion region, an intermediate chip including a source follower gate, a select gate, and a reset gate corresponding to each of pixels, a first silicon layer, and a second wiring layer, and a lower chip including an image sensor processor, a third wiring layer, and a second silicon layer, a cross-section of an upper portion of a through electrode extending from the second wiring layer through the first silicon layer having an inverted trapezoidal structure.

公开(公告)号：US20240153883A1

公开(公告)日：2024-05-09

申请号：US18387729

申请日：2023-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seunghoon HAN ,  Doowon KWON ,  Taeyeong KIM ,  Minho JANG ,  Sohye CHO ,  Haesung KIM ,  Hyeonsoo PARK

IPC: H01L23/544 ,  H01L21/66

CPC classification number: H01L23/544 ,  H01L22/12 ,  H01L2223/54426

Abstract: Provided is a device including a substrate and an overlay target structure provided on the substrate, the overlay target structure includes a first alignment key having a plurality of line masks having a first width and arranged at a first pitch, a second alignment key having a plurality of line masks having a second width and arranged at a second pitch, and a nanostructure layer arranged between the first alignment key and the second alignment key, and including a plurality of nanostructures having widths less than or equal to the first width and the second width, and arranged at a pitch less than the first pitch and the second pitch.

公开(公告)号：US20170125471A1

公开(公告)日：2017-05-04

申请号：US15333382

申请日：2016-10-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donghyun KIM ,  Doowon KWON

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/1469

Abstract: A stack-type semiconductor device includes a lower device and an upper device disposed on the lower device. The lower device includes a lower substrate, a lower interconnection on the lower substrate, a lower pad on the lower interconnection, and a lower interlayer insulating layer covering side surfaces of the lower interconnection and the lower pad. The upper device includes an upper substrate, an upper interconnection under the upper substrate, an upper pad under the upper interconnection, and an upper interlayer insulating layer covering side surfaces of the upper interconnection and the upper pad. Each of the pads has a thick portion and a thin portion. The thin portions of the pads are bonded to each other, the thick portion of the lower pad contacts the bottom of the upper interlayer insulating layer, and the thick portion of the upper pad contacts the top of the lower interlayer insulating layer.