公开(公告)号：US12125709B2

公开(公告)日：2024-10-22

申请号：US18195570

申请日：2023-05-10

Applicant: CENTRAL GLASS COMPANY, LIMITED

Inventor： Shoi Suzuki ,  Akifumi Yao

IPC: H01L21/311 ,  C09K13/04 ,  C09K13/06 ,  C09K13/08 ,  H01L21/02 ,  H01L21/302 ,  H01L21/306 ,  H01L21/67

CPC classification number: H01L21/31116 ,  C09K13/04 ,  C09K13/06 ,  C09K13/08 ,  H01L21/02164 ,  H01L21/302 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/67069 ,  H01L21/67103

Abstract: The method of dry-etching silicon oxide of the present disclosure includes reacting silicon oxide with any one of the following (A) to (C): (A) a gaseous hydrogen fluoride and a gaseous organic amine compound, (B) a gaseous hydrogen fluoride salt of an organic amine compound, and (C) a gaseous hydrogen fluoride, a gaseous organic amine compound, and a gaseous hydrogen fluoride salt of an organic amine compound in a non-plasma state.

公开(公告)号：US11984319B2

公开(公告)日：2024-05-14

申请号：US16783530

申请日：2020-02-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kensaku Narushima ,  Nagayasu Hiramatsu ,  Takanobu Hotta ,  Atsushi Matsumoto ,  Masato Araki ,  Hideaki Yamasaki

IPC: H01L21/285 ,  C09K13/08 ,  C23C16/06 ,  C23C16/455 ,  C23C16/46 ,  H01L21/306 ,  H01L21/3213 ,  H01L21/324 ,  H01L21/67

CPC classification number: H01L21/28556 ,  C09K13/08 ,  C23C16/06 ,  C23C16/45525 ,  C23C16/46 ,  H01L21/30604 ,  H01L21/32133 ,  H01L21/324 ,  H01L21/67063

Abstract: There is provided a method of processing a substrate, the method including: providing the substrate on which a natural oxide film is formed; performing a pre-processing on the substrate such that the natural oxide film formed on the substrate is removed; and directly forming a tungsten film on the substrate by heating a stage on which the substrate is mounted to a predetermined temperature and supplying a tungsten chloride gas and a reduction gas to the substrate which has been subjected to the pre-processing.

公开(公告)号：US20240150654A1

公开(公告)日：2024-05-09

申请号：US18077509

申请日：2022-12-08

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Gi Young KIM ,  Hak Soo KIM ,  Jeong Sik OH ,  Myung Ho LEE ,  Myung Geun SONG

IPC: C09K13/08

CPC classification number: C09K13/08 ,  H01L21/30604

Abstract: The present invention relates to a composition for selectively etching silicon on a surface on which a silicon oxide film (SiO2) and silicon (Si) are exposed. According to the present invention, it is possible to improve etch selectivity of silicon on the semiconductor surface.

公开(公告)号：US11970647B2

公开(公告)日：2024-04-30

申请号：US17624872

申请日：2020-06-19

Applicant: BASF SE

Inventor： Francisco Javier Lopez Villanueva ,  Yeni Burk ,  Daniel Loeffler ,  Jan Ole Mueller ,  Marcel Brill ,  Patrick Wilke ,  Jean-Pierre Berkan Lindner ,  Volodymyr Boyko

IPC: C09K13/08 ,  C09K13/00 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213

CPC classification number: C09K13/08 ,  C09K13/00 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/32134

Abstract: Described herein is a composition for selectively etching a layer including a silicon germanium alloy (SiGe) in the presence of a silicon-containing layer, particularly a layer comprising a-Si, SiOx, SiON, SiN, or a combination thereof, the composition including:



(a) an oxidizing agent,
(b) an acid selected from an inorganic acid and an organic acid,
(c) an etchant including a source of fluoride ions,
(d) a polyvinylpyrrolidone (PVP), and
(e) water.

公开(公告)号：US11912921B2

公开(公告)日：2024-02-27

申请号：US17398181

申请日：2021-08-10

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Mick Bjelopavlic ,  Carl Ballesteros

IPC: C09K13/10 ,  H01L21/306 ,  C09K13/08

CPC classification number: C09K13/10 ,  C09K13/08 ,  H01L21/30604

Abstract: The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

公开(公告)号：US20240045108A1

公开(公告)日：2024-02-08

申请号：US17641410

申请日：2021-10-19

Applicant: Sang-Ro LEE ,  Katsushi IGARASHI

Inventor： Sang-Ro LEE ,  Katsushi IGARASHI

IPC: G02B1/118 ,  C09K13/08 ,  C03C23/00 ,  C03C15/00

CPC classification number: G02B1/118 ,  C09K13/08 ,  C03C23/0075 ,  C03C15/00 ,  C03C23/0085

Abstract: A wet etching method according to the present disclosure includes cleaning the glass, forming a nanoscale pattern by wet-etching the cleaned glass, and cleaning and drying the nano-patterned glass, wherein a wet etching solution used in the wet etching includes hydrofluoric acid and a surfactant. According to the present disclosure, a glass having high transmittance/low reflectance can be provided. The glass can be applied to an optical device and a display including a mobile device.

公开(公告)号：US20230407178A1

公开(公告)日：2023-12-21

申请号：US18251334

申请日：2021-10-27

Applicant: STELLA CHEMIFA CORPORATION

Inventor： Kazuya DATE ,  Nodoka NAKATA ,  Rui HASEBE ,  Keiichi NII

IPC: C09K13/08 ,  H01L21/311

CPC classification number: C09K13/08 ,  H01L21/31111

Abstract: A micromachining processing agent and a micromachining processing method capable of selectively micromachining a silicon oxide film when a laminated film including at least a silicon nitride film, a silicon oxide film, and a silicon alloy film is micromachined. The micromachining processing agent is used for micromachining of a laminated film including at least a silicon oxide film, a silicon nitride film, and a silicon alloy film. The micromachining processing agent contains: (a) 0.01 to 50 mass % of hydrogen fluoride; (b) 0.1 to 40 mass % of ammonium fluoride; (c) 0.001 to 10 mass % of a water-soluble polymer; (d) 0.001 to 1 mass % of an organic compound having a carboxyl group; and (e) water as an optional component, in which the water-soluble polymer is at least one selected from a group consisting of acrylic acid, ammonium acrylate, acrylamide, styrenesulfonic acid, ammonium styrenesulfonate, and styrenesulfonic acid ester.

公开(公告)号：US11739427B2

公开(公告)日：2023-08-29

申请号：US17646274

申请日：2021-12-28

Applicant: ASM IP HOLDING B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC: C23F4/02 ,  C23F1/12 ,  H01L21/3213 ,  C09K13/00 ,  H01L21/311 ,  C09K13/08 ,  C09K13/10 ,  H01J37/32 ,  H01L21/3065

CPC classification number: C23F4/02 ,  C09K13/00 ,  C09K13/08 ,  C09K13/10 ,  C23F1/12 ,  H01J37/32009 ,  H01J37/3244 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/31138

Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US20190237338A1

公开(公告)日：2019-08-01

申请号：US16375984

申请日：2019-04-05

Applicant: Tokyo Electron Limited

Inventor： Antonio L.P. Rotondaro ,  Wallace P. Printz

IPC: H01L21/311 ,  H01L21/67 ,  C09K13/06 ,  C09K13/04

CPC classification number: C09K13/04 ,  C09K13/06 ,  C09K13/08 ,  H01L21/31111 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67253 ,  H01L22/10 ,  H01L28/00

Abstract: A technique to inhibit the growth of colloidal silica deposits on surfaces treated in phosphoric acid is described. In one embodiment, the disclosed techniques include the use of a colloidal silica growth inhibitor as an additive to a phosphoric acid solution utilized for a silicon nitride etch. In some embodiments, the additive may have chemistry that may contain strong anionic groups. A method and apparatus is provided that monitors the silica concentration and/or the colloidal silica growth inhibitor concentration in the phosphoric acid solution during processing and adjusts the amount of those components as needed. Techniques are provided for a method and apparatus to control the additive concentration to be used as well as the silica concentration in the phosphoric acid solution. The techniques described herein provide a high selectivity etch of silicon nitride towards silicon dioxide without the growth of colloidal silica deposits on the exposed surfaces.

公开(公告)号：US20190200608A1

公开(公告)日：2019-07-04

申请号：US16298101

申请日：2019-03-11

Applicant: International Business Machines Corporation

Inventor： STACEY M. GIFFORD ,  HUAN HU ,  PABLO M. ROJAS ,  GUSTAVO A. STOLOVITZKY

IPC: A01N25/34 ,  B81C1/00 ,  C30B33/10 ,  A01N59/16 ,  B81C99/00 ,  C09K13/08

CPC classification number: A01N25/34 ,  A01N59/16 ,  B81C1/00111 ,  B81C1/00206 ,  B81C1/00444 ,  B81C1/0046 ,  B81C1/00539 ,  B81C99/009 ,  B82Y5/00 ,  B82Y30/00 ,  B82Y40/00 ,  C09K13/08 ,  C30B33/08 ,  C30B33/10 ,  H01L21/30604 ,  H01L21/32134 ,  A01N25/10

Abstract: The method comprises contacting a silicon substrate with a silver salt and an acid for a time effective to produce spikes having a first end disposed on the silicon substrate and a second end extending away from the silicon substrate. The spikes have a second end diameter of about 10 nm to about 200 nm, a height of about 100 nm to 10 micrometers, and a density of about 10 to 100 per square microns. The nanostructures provide antimicrobial properties and can be transferred to the surface of various materials such as polymers.