公开(公告)号：US09196714B2

公开(公告)日：2015-11-24

申请号：US14496937

申请日：2014-09-25

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Davide Giuseppe Patti

IPC: H01L29/739 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66

CPC classification number: H01L29/7395 ,  H01L29/0804 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/66333

Abstract: An embodiment of an IGBT device is integrated in a chip of semiconductor material including a substrate of a first type of conductivity, an active layer of a second type of conductivity formed on an inner surface of the substrate, a body region of the first type of conductivity extending within the active layer from a front surface thereof opposite the inner surface, a source region of the second type of conductivity extending within the body region from the front surface, a channel region being defined within the body region between the source region and the active layer, a gate element insulated from the front surface extending over the channel region, a collector terminal contacting the substrate on a rear surface thereof opposite the inner surface, an emitter terminal contacting the source region and the body region on the front surface, and a gate terminal contacting the gate element.

Abstract translation: IGBT器件的实施例集成在半导体材料的芯片中，该半导体材料的芯片包括第一导电类型的衬底，形成在衬底的内表面上的第二类导电性的有源层，第一类型的主体区域 在活性层内从与内表面相反的前表面延伸的导电性，第二类型的导电源的源区从前表面延伸到体区内，沟道区被限定在源区与源区之间 活性层，与在沟道区域上延伸的前表面绝缘的栅极元件，在与内表面相反的后表面上接触衬底的集电极端子，与源极区域和前表面上的体区域接触的发射极端子，以及 栅极端子接触栅极元件。