Demarcated digital content and method for creating and processing demarcated digital works
    42.
    发明授权
    Demarcated digital content and method for creating and processing demarcated digital works 失效
    用于创建和处理划分数字作品的划分数字内容和方法

    公开(公告)号:US06973445B2

    公开(公告)日:2005-12-06

    申请号:US09867754

    申请日:2001-05-31

    CPC classification number: G06Q10/10 G06Q20/382

    Abstract: Flags are used to mark portions of content in a digital work to permit marking or demarcation of portions of the document. The demarcated portions can be handled in various ways. For example, different usage rights can be applied to demarcated portions, the demarcated portionis can be culled for use as a summary, or the like. The flags can be used to demarcate portions of content that has been downloaded to keep track of payment and download status and thus add flexibility to electronic distribution of content. A flag usage rights element can be attached to limit and control access to flags in a desired manner.

    Abstract translation: 标记用于标记数字作品中的部分内容,以允许标记或划分文档的一部分。 划分的部分可以以各种方式处理。 例如,不同的使用权限可以应用于划分的部分,划分的部分可以被淘汰以用作总结等。 这些标志可用于划分已经下载的内容的部分,以跟踪付款和下载状态,从而增加了电子分发内容的灵活性。 可以附加标志使用权限元素,以期望的方式限制和控制对标志的访问。

    Method and apparatus for hierarchical assignment of rights to documents and documents having such rights
    43.
    发明申请
    Method and apparatus for hierarchical assignment of rights to documents and documents having such rights 有权
    分类转让具有这种权利的文件和文件的权利的方法和装置

    公开(公告)号:US20050187877A1

    公开(公告)日:2005-08-25

    申请号:US11111853

    申请日:2005-04-22

    Abstract: A method, system and device for transferring usage rights associated with digital works, including generating, by a first party, first usage rights and hierarchical rights for a digital work, the first usage rights defining a use for the digital works, the first hierarchical rights specifying rights to derive usage rights or other hierarchical rights; presenting the first usage rights and hierarchical rights to a second party; receiving a selection from the second party indicating desired rights of the first usage rights and hierarchical rights; and granting the desired rights of the first usage rights and hierarchical rights to the second party.

    Abstract translation: 一种用于传送与数字作品相关联的使用权限的方法,系统和设备,包括由第一方生成数字作品的第一使用权限和分层权限,定义数字作品使用的第一使用权限,第一层次权限 指定获得使用权或其他分层权限的权利; 向第二方呈现第一使用权和分级权限; 从所述第二方接收指示所述第一使用权和分级权限的所需权限的选择; 并向第二方授予所需权利的第一使用权和分级权限。

    Method for intrinsically doped III-A and V-A compounds
    44.
    发明授权
    Method for intrinsically doped III-A and V-A compounds 失效
    本征掺杂III-A和V-A化合物的方法

    公开(公告)号:US5525538A

    公开(公告)日:1996-06-11

    申请号:US400735

    申请日:1995-03-08

    Abstract: An amorphous compound is changed to single crystal structure by heating at an elevated temperature in an inert atmosphere or in an atmosphere of a forming gas, the amorphous compound is composed of at least one Group III-A element of the Periodic Table and at least one Group V-A element, the amorphous compound having an excess over stoichiometric amount of at least one Group V-A element. The single crystal phase compound, intrinsically doped with at least one element from Group V-A, has the properties of high conductivity for a semiconductor without using any extrinsic dopant and a non-alloyed ohmic contact with a metal.

    Abstract translation: 无定形化合物通过在惰性气氛中或在形成气体的气氛中在升高的温度下加热而变为单晶结构,该无定形化合物由周期表的至少一种III-A族元素和至少一种 VA族元素,具有超过化学计量量的至少一种VA族元素的无定形化合物。 本征掺杂有V-A族元素的单晶相化合物具有对半导体具有高导电性的特性,而不使用任何外在掺杂剂和与金属的非合金欧姆接触。

    Intrinsically doped III-A and V-A compounds having precipitates of V-A
element
    45.
    发明授权
    Intrinsically doped III-A and V-A compounds having precipitates of V-A element 失效
    具有V-A元素析出物的本质掺杂的III-A和V-A化合物

    公开(公告)号:US5419785A

    公开(公告)日:1995-05-30

    申请号:US226586

    申请日:1994-04-12

    Abstract: An amorphous compound is changed to single crystal structure by heating at an elevated temperature in an inert atmosphere or in an atmosphere of a forming gas, the amorphous compound is composed of at least one Group III-A element of the Periodic Table and at least one Group V-A element, the amorphous compound having an excess over stoichiometric amount of at least one Group V-A element. The single crystal phase compound, intrinsically doped with at least one element from Group V-A, has the properties of high conductivity for a semiconductor without using any extrinsic dopant and a non-alloyed ohmic contact with a metal.

    Abstract translation: 无定形化合物通过在惰性气氛中或在形成气体的气氛中在升高的温度下加热而变为单晶结构,该无定形化合物由周期表的至少一种III-A族元素和至少一种 VA族元素,具有超过化学计量量的至少一种VA族元素的无定形化合物。 本征掺杂有V-A族元素的单晶相化合物具有对半导体具有高导电性的特性,而不使用任何外在掺杂剂和与金属的非合金欧姆接触。

Patent Agency Ranking