公开(公告)号：US20160099257A1

公开(公告)日：2016-04-07

申请号：US14709844

申请日：2015-05-12

Applicant: Samsung Display Co., Ltd.

Inventor： Donghwan Shim ,  Suyeon Sim ,  Seunghwan Cho ,  Sungeun Lee ,  Jungkyu Lee

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/124 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78675 ,  H01L29/7869

Abstract: A thin film transistor includes an active pattern formed on a substrate; a gate pattern formed on the active pattern and comprising a gate electrode and a gate line; a gate insulating layer disposed between the gate pattern and the active pattern; a source electrode that overlaps a first side of the active pattern and contacts a data line; a drain electrode that overlaps a second side of the active pattern and is separated from the source electrode; a channel area formed in an area where the gate line and an active line of the active pattern overlap each other; and a gate line modifying unit formed in the channel area by changing a linear shape of the gate line.

Abstract translation: 薄膜晶体管包括形成在衬底上的有源图案; 形成在有源图案上并包括栅电极和栅极线的栅极图案; 设置在所述栅极图案和所述有源图案之间的栅极绝缘层; 源电极，与有源图案的第一侧重叠并接触数据线; 漏电极，与所述有源图案的第二面重叠，并与所述源电极分离; 形成在活动图案的栅极线和有源线重叠的区域中的沟道区域; 以及通过改变栅极线的线性形状而形成在沟道区中的栅极线修改单元。