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    IMAGE SENSORS AND ELECTRONIC DEVICES
    42.
    发明申请
    IMAGE SENSORS AND ELECTRONIC DEVICES 有权

    公开(公告)号：US20210235046A1

    公开(公告)日：2021-07-29

    申请号：US17227676

    申请日：2021-04-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gae Hwang LEE ,  Kwang Hee LEE ,  Kyung Bae PARK ,  Sung Young YUN ,  Dong-Seok LEEM ,  Yong Wan JIN

    IPC: H04N9/04 ,  H04N5/32 ,  H01L27/146

    Abstract: An image sensor may include a photoelectric device configured to selectively absorb light associated with a first color of three primary colors, a semiconductor substrate stacked with the photoelectric device and including first and second photo-sensing devices configured to sense light associated with second and third colors of the three primary colors, respectively, a first color filter corresponding to the first photo-sensing device and configured to selectively transmit light of the first wavelength spectrum, a second color filter corresponding to the second photo-sensing device and configured to selectively transmit light associated with a mixed color of the first color and the third color, and a first insulating layer between the photoelectric device and the semiconductor substrate and corresponding to the second photo-sensing device, and configured to selectively reflect light of a part of visible light.

    PHOTOELECTRIC DIODES AND ORGANIC SENSORS AND ELECTRONIC DEVICES
    43.
    发明申请
    PHOTOELECTRIC DIODES AND ORGANIC SENSORS AND ELECTRONIC DEVICES 审中-公开

    公开(公告)号：US20200235168A1

    公开(公告)日：2020-07-23

    申请号：US16536879

    申请日：2019-08-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kwang Hee LEE ,  Takkyun RO ,  Dong-Seok LEEM ,  Ohkyu KWON ,  Bum Woo PARK ,  Hyesung CHOI

    IPC: H01L27/32 ,  H01L27/28

    Abstract: A photoelectric diode includes a first electrode and a second electrode facing each other; a photoelectric conversion layer between the first electrode and the second electrode, and a compensation layer on the photoelectric conversion layer, the compensation layer being configured to compensate absorption and reflection of light. The photoelectric conversion layer is associated with a first optical spectrum having a light-absorption peak at a first wavelength and a reflection peak at a second wavelength, the first wavelength and the second wavelength both within a wavelength region of about 750 nm to about 1200 nm. The photoelectric diode is associated with a second optical spectrum having a light-absorption peak at a third wavelength, the third wavelength is within the wavelength region of about 750 nm to about 1200 nm, the third wavelength different from the first wavelength.

    ORGANIC PHOTOELECTRIC DEVICE AND IMAGE SENSOR
    49.
    发明申请
    ORGANIC PHOTOELECTRIC DEVICE AND IMAGE SENSOR 审中-公开
    有机光电器件和图像传感器

    公开(公告)号：US20170062747A1

    公开(公告)日：2017-03-02

    申请号：US15150930

    申请日：2016-05-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dong-Seok LEEM ,  Sung Young YUN ,  Kwang Hee LEE ,  Sean-Jeong LIM ,  Yong Wan JIN

    IPC: H01L51/44 ,  H01L27/30

    CPC classification number: H01L51/44 ,  H01L27/307 ,  H01L51/0052 ,  H01L51/4206 ,  H01L51/424 ,  H01L51/4273 ,  H01L51/441 ,  Y02E10/549

    Abstract: An organic photoelectronic device includes an anode and a cathode facing each other, a light-absorption layer between the anode and the cathode, and a first auxiliary layer between the cathode and the light-absorption layer, the first auxiliary layer having an energy bandgap of about 3.0 eV to about 4.5 eV, and a difference between a work function of the cathode and a highest occupied molecular orbital (HOMO) energy level of the first auxiliary layer is about 1.5 eV to about 2.0 eV.

    Abstract translation: 有机光电子器件包括彼此相对的阳极和阴极，阳极和阴极之间的光吸收层，以及阴极和光吸收层之间的第一辅助层，第一辅助层具有能量带隙 约3.0eV至约4.5eV，并且阴极的功函数和第一辅助层的最高占据分子轨道（HOMO）能级之间的差为约1.5eV至约2.0eV。

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