公开(公告)号：US20140217414A1

公开(公告)日：2014-08-07

申请号：US14245054

申请日：2014-04-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasuyuki ARAI

IPC: H01L27/06

CPC classification number: H01L27/0629 ,  H01Q1/36 ,  H01Q1/38 ,  H01Q7/00 ,  H01Q9/285 ,  H02J7/025 ,  H02J17/00 ,  H02J50/10 ,  H02J50/27 ,  H02J50/50

Abstract: A semiconductor device comprises a thin film transistor provided over a substrate having an insulating surface, and an electrode penetrating the substrate. The thin film transistor is provided between a first structural body and a second structural body, which has a higher rigidity than the first structural body, which serve as protectors because the structural bodies have resistance to a pressing force such as a tip of a pen or bending stress applied from outside so malfunction due to the pressing force and the bending stress can be prevented.

Abstract translation: 半导体器件包括设置在具有绝缘表面的衬底上的薄膜晶体管和穿透衬底的电极。 薄膜晶体管设置在第一结构体和第二结构体之间，该第一结构体和第二结构体具有比第一结构体更高的刚性，其作为保护器，因为结构体具有抵抗诸如笔的尖端的按压力 可以防止从外部施加的弯曲应力，由于压力和弯曲应力而导致的故障。

公开(公告)号：US20140124779A1

公开(公告)日：2014-05-08

申请号：US14151183

申请日：2014-01-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuyuki ARAI

IPC: H01L27/12

CPC classification number: H01L29/78696 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/45 ,  H01L29/7869

Abstract: A display device includes a first wiring functioning as a gate electrode formed over a substrate, a gate insulating film formed over the first wiring, a second wiring and an electrode layer provided over the gate insulating film, and a high-resistance oxide semiconductor layer formed between the second wiring and the electrode layer are included. In the structure, the second wiring is formed using a stack of a low-resistance oxide semiconductor layer and a conductive layer over the low-resistance oxide semiconductor layer, and the electrode layer is formed using a stack of the low-resistance oxide semiconductor layer and the conductive layer which is stacked so that a region functioning as a pixel electrode of the low-resistance oxide semiconductor layer is exposed.

Abstract translation: 显示装置包括用作形成在基板上的栅电极的第一布线，形成在第一布线上的栅极绝缘膜，设置在栅极绝缘膜上的第二布线和电极层，以及形成的高电阻氧化物半导体层 包括在第二布线和电极层之间。 在该结构中，第二布线使用低电阻氧化物半导体层上的低电阻氧化物半导体层和导电层的堆叠形成，并且使用低电阻氧化物半导体层的堆叠形成电极层 并且层叠的导电层露出作为低电阻氧化物半导体层的像素电极的区域。

公开(公告)号：US20130234122A1

公开(公告)日：2013-09-12

申请号：US13867471

申请日：2013-04-22

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yasuyuki ARAI

IPC: H01L51/52

CPC classification number: H01L51/5237 ,  H01L27/3244 ,  H01L51/524 ,  H01L51/5259 ,  H01L51/5275 ,  H01L51/5281 ,  H01L2251/5315 ,  H05B33/04

Abstract: An organic EL display device of active matrix type wherein insulated-gate field effect transistors formed on a single-crystal semiconductor substrate are overlaid with an organic EL layer; characterized in that the single-crystal semiconductor substrate (413 in FIG. 4) is held in a vacant space (414) which is defined by a bed plate (401) and a cover plate (405) formed of an insulating material, and a packing material (404) for bonding the bed and cover plates; and that the vacant space (414) is filled with an inert gas and a drying agent, whereby the organic EL layer is prevented from oxidizing.

Abstract translation: 其中有源矩阵型的有机EL显示器件，其中形成在单晶半导体衬底上的绝缘栅场效应晶体管与有机EL层重叠; 其特征在于，单晶半导体衬底（图4中的413）保持在由隔板（401）和由绝缘材料形成的盖板（405）限定的空白空间（414）中，并且 包装材料（404），用于粘合床和盖板; 并且空置空间（414）填充有惰性气体和干燥剂，由此防止有机EL层氧化。