公开(公告)号：US08178887B2

公开(公告)日：2012-05-15

申请号：US13004758

申请日：2011-01-11

Applicant: Tae Yun Kim ,  Hyo Kun Son

Inventor： Tae Yun Kim ,  Hyo Kun Son

IPC: H01L33/00

CPC classification number: H01L33/06 ,  H01L21/02584 ,  H01L33/007 ,  H01L33/04 ,  H01L33/08 ,  H01L33/32 ,  H01L33/325

Abstract: Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped semiconductor layer on the active layer; a first delta-doped layer on the undoped semiconductor layer; and a second conductive type semiconductor layer on the first delta-doped layer.

Abstract translation: 提供一种半导体发光器件及其制造方法。 半导体发光器件包括：第一导电类型半导体层; 在第一导电类型半导体层上的有源层; 有源层上的未掺杂的半导体层; 在未掺杂半导体层上的第一δ掺杂层; 以及在第一δ掺杂层上的第二导电类型半导体层。

公开(公告)号：US08103066B2

公开(公告)日：2012-01-24

申请号：US11770351

申请日：2007-06-28

Applicant: Tae Yun Kim ,  Jin Yong Lee

Inventor： Tae Yun Kim ,  Jin Yong Lee

IPC: G06K9/00

CPC classification number: A61B8/00 ,  A61B8/463 ,  A61B8/466 ,  A61B8/467 ,  A61B8/469 ,  A61B8/483

Abstract: The ultrasound system includes a processor that extracts plane data from volume data formed by using ultrasound signals received from a target object to form a plane image and sets a region of interest (ROI) on the plane image. The processor extracts at least a portion of the volume data to form a ROI image and a 3D image corresponding to the ROI image. A control unit controls a display unit to display the plane image together with the 3D image, and also controls the processor to set a new ROI on the displayed plane image to form a new ROI image and a 3D image corresponding to the new ROI image.

Abstract translation: 超声系统包括从通过使用从目标对象接收的超声信号形成的体数据中提取平面数据以形成平面图像并在平面图像上设置感兴趣区域（ROI）的处理器。 处理器提取至少一部分体积数据以形成对应于ROI图像的ROI图像和3D图像。 控制单元控制显示单元与3D图像一起显示平面图像，并且还控制处理器在所显示的平面图像上设置新的ROI，以形成新的ROI图像和对应于新的ROI图像的3D图像。

公开(公告)号：US20110118606A1

公开(公告)日：2011-05-19

申请号：US12878903

申请日：2010-09-09

Applicant: Tae Yun Kim

Inventor： Tae Yun Kim

IPC: A61B8/00 ,  G06K9/40

CPC classification number: G01S15/8981

Abstract: Embodiments of adaptively performing clutter filtering are disclosed. In one embodiment, by way of non-limiting example, an ultrasound system comprises: an ultrasound data acquisition unit configured to transmit and receive ultrasound signals to and from a target object to output a plurality of ultrasound data corresponding to each pixel of a color Doppler mode image; and a processing unit in communication with the ultrasound data acquisition unit and being configured to calculate a power difference value corresponding to each of the pixels based on the plurality of ultrasound data, determine whether the power difference value is equal to or larger than a first threshold value, and if the power difference value is equal to or larger than the first threshold value, then perform first clutter filtering upon the plurality of ultrasound data, or if the power difference value is less than the first threshold value, then perform second clutter filtering upon the plurality of ultrasound data.

Abstract translation: 公开了自适应执行杂波滤波的实施例。 在一个实施例中，作为非限制性示例，超声系统包括：超声数据获取单元，被配置为向目标对象发送和接收超声信号，以输出对应于彩色多普勒的每个像素的多个超声数据 模式图像; 以及处理单元，与所述超声数据获取单元通信并且被配置为基于所述多个超声数据来计算与所述像素中的每一个对应的功率差值，确定所述功率差值是否等于或大于第一阈值 值，并且如果功率差值等于或大于第一阈值，则对多个超声数据执行第一杂波滤波，或者如果功率差值小于第一阈值，则执行第二杂波滤波 在多个超声数据上。

公开(公告)号：US07851813B2

公开(公告)日：2010-12-14

申请号：US12199038

申请日：2008-08-27

Applicant: Tae Yun Kim ,  Hyo Kun Son

Inventor： Tae Yun Kim ,  Hyo Kun Son

IPC: H01L33/00

CPC classification number: H01L33/06 ,  H01L33/32

Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting layer comprises a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The active layer comprises a quantum well layer, a quantum barrier layer, and a dual barrier layer.

Abstract translation: 提供一种半导体发光器件及其制造方法。 半导体发光层包括第一导电类型半导体层，第一导电类型半导体层上的有源层和有源层上的第二导电类型半导体层。 有源层包括量子阱层，量子势垒层和双阻挡层。

公开(公告)号：US20100280384A1

公开(公告)日：2010-11-04

申请号：US12769411

申请日：2010-04-28

Applicant: Seong Ho SONG ,  Tae Yun Kim

Inventor： Seong Ho SONG ,  Tae Yun Kim

IPC: A61B8/00

CPC classification number: G01S15/8981 ,  A61B8/488

Abstract: Embodiments for setting eigenvectors for clutter signal filtering from Doppler signals in an ultrasound system are disclosed. In one embodiment, the ultrasound system includes: a Doppler signal acquisition unit configured to transmit and receive ultrasound signals to and from a target object to acquire first Doppler signals; and a processing unit configured to compute a plurality of eigenvectors by using the first Doppler signals and form second Doppler signals corresponding to directions of the computed eigenvectors, the processing unit being further configured to compute component values of the second Doppler signals and set eigenvectors for clutter signal filtering among the plurality of eigenvectors by using the computed component values.

Abstract translation: 公开了一种用于在超声系统中设置来自多普勒信号的杂波信号滤波的特征向量的实施例。 在一个实施例中，超声系统包括：多普勒信号获取单元，被配置为向目标对象发送和从目标对象接收超声信号以获取第一多普勒信号; 以及处理单元，被配置为通过使用所述第一多普勒信号来计算多个特征向量，并且形成对应于所计算的特征向量的方向的第二多普勒信号，所述处理单元还被配置为计算所述第二多普勒信号的分量值并且设置用于杂波的特征向量 通过使用所计算的分量值在多个特征向量之间进行信号滤波。

公开(公告)号：US07700961B2

公开(公告)日：2010-04-20

申请号：US12198728

申请日：2008-08-26

Applicant: Tae Yun Kim ,  Hyo Kun Son

Inventor： Tae Yun Kim ,  Hyo Kun Son

IPC: H01L33/00 ,  H01L29/24

CPC classification number: H01L33/06 ,  H01L21/02584 ,  H01L33/007 ,  H01L33/04 ,  H01L33/08 ,  H01L33/32 ,  H01L33/325

Abstract: Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped semiconductor layer on the active layer; a first delta-doped layer on the undoped semiconductor layer; and a second conductive type semiconductor layer on the first delta-doped layer.

公开(公告)号：US07469360B2

公开(公告)日：2008-12-23

申请号：US11856777

申请日：2007-09-18

Applicant: Tae Yun Kim

Inventor： Tae Yun Kim

IPC: G06F11/00

CPC classification number: G11C29/12015 ,  G11C29/14

Abstract: Disclosed is a method for testing a memory device with a long-term clock signal by automatically performing precharge only after activation. In this method, a signal for precharging the banks of the memory device is automatically generated only at the falling edge of an external signal when a signal for activating the banks is applied. Accordingly, the present invention ensures a stable test of the memory device, reducing the testing time.

Abstract translation: 公开了一种通过仅在激活后自动执行预充电来测试具有长期时钟信号的存储器件的方法。 在该方法中，当施加用于激活存储体的信号时，仅在外部信号的下降沿才自动产生用于对存储器件的存储体进行预充电的信号。 因此，本发明确保了存储器件的稳定测试，减少了测试时间。