公开(公告)号：US06977417B2

公开(公告)日：2005-12-20

申请号：US10465823

申请日：2003-06-20

申请人： Youichi Momiyama ,  Kenichi Okabe ,  Takashi Saiki ,  Hidenobu Fukutome

发明人： Youichi Momiyama ,  Kenichi Okabe ,  Takashi Saiki ,  Hidenobu Fukutome

IPC分类号： H01L21/265 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78

CPC分类号： H01L29/66492 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/6656 ,  H01L29/6659 ,  H04M15/8016 ,  H04M15/81 ,  H04M2215/0112 ,  H04M2215/2026 ,  H04M2215/22 ,  H04M2215/32 ,  H04M2215/7414 ,  H04W4/24

摘要： An impurity-diffused layer having an extension structure is formed first by implanting Sb ion as an impurity for forming a pocket region; then by implanting N as a diffusion-suppressive substance so as to produce two peaks in the vicinity of the interface with a gate electrode and at an amorphous/crystal interface which serves as an defect interface generated by the impurity in the pocket region; and by carrying out ion implantations for forming an extension region and deep source and drain regions.

摘要翻译： 首先通过注入Sb离子作为形成袋区域的杂质来形成具有延伸结构的杂质扩散层; 然后通过将N作为扩散抑制物质注入，以便在与栅电极的界面附近产生两个峰，以及在作为由口袋区域中的杂质产生的缺陷界面的非晶/晶界面处产生两个峰; 并且通过进行用于形成延伸区域和深源极和漏极区域的离子注入。