公开(公告)号：US20170194511A1

公开(公告)日：2017-07-06

申请号：US15007280

申请日：2016-01-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Chun Chen ,  Chun-Hung Cheng ,  Yu-Chieh Lin ,  Ya-Sheng Feng ,  Ping-Chia Shih ,  Ling-Hsiu Chou

IPC: H01L29/792 ,  H01L29/66

CPC classification number: H01L29/792 ,  H01L29/6656 ,  H01L29/66833

Abstract: A non-volatile memory (NVM) device includes a substrate, a charge trapping structure, a first gate electrode and a spacer. The charge trapping structure is disposed on the substrate. The first gate electrode is disposed on the charge trapping structure. The spacer is disposed on at least one sidewall of the first gate electrode and the charge trapping structure. Wherein, the charge trapping structure has a lateral size substantially greater than that of the first gate electrode.