公开(公告)号：US4727007A

公开(公告)日：1988-02-23

申请号：US815442

申请日：1985-12-31

申请人： William M. Risen, Jr. ,  Efstratios I. Kamitsos

发明人： William M. Risen, Jr. ,  Efstratios I. Kamitsos

IPC分类号： G03C1/735 ,  G03C5/56 ,  H01L21/225 ,  H01L21/265 ,  H01L21/312 ,  H01L31/0224 ,  H01L51/30 ,  G03C1/49 ,  G03H5/00

CPC分类号： H01L31/0224 ,  G03C1/735 ,  G03C5/56 ,  H01L21/2254 ,  H01L21/265 ,  H01L21/312 ,  H01L51/0051

摘要： Metallic salts of organic charge-transfer agents, such as TCNQ, TNAP, TCNE and DDQ and their derivatives, can be processed by an electron beam for a variety of useful electronic and optical applications. The metallic charge transfer salts can be used to deposit high resolution conductive lines directly without developing solutions or subsequent metallization steps. The compounds can also be employed in the conventional manner as resists for doping (i.e., ion diffusion or implantation) and to diffuse metals into substrates. In particular, elecronic devices, optical devices and image-storage devices are disclosed which can be formed by simple electron beam processed of metal charge-transfer salt films deposited on substrates.

摘要翻译： 有机电荷转移剂如TCNQ，TNAP，TCNE和DDQ及其衍生物的金属盐可以通过电子束加工，用于各种有用的电子和光学应用。 金属电荷转移盐可用于直接沉积高分辨率导电线而无需显影溶液或随后的金属化步骤。 化合物也可以以常规方式用作掺杂用抗蚀剂（即离子扩散或注入）并将金属扩散到基底中。 特别地，公开了电子装置，光学装置和图像存储装置，其可以通过沉积在基板上的金属电荷转移盐膜的简单电子束处理形成。

公开(公告)号：US4613553A

公开(公告)日：1986-09-23

申请号：US740183

申请日：1985-05-31

申请人： William M. Risen, Jr. ,  Efstratios I. Kamitsos

发明人： William M. Risen, Jr. ,  Efstratios I. Kamitsos

IPC分类号： G03C1/735 ,  G03C5/56 ,  H01L21/225 ,  H01L21/265 ,  H01L21/312 ,  H01L31/0224 ,  H01L51/30 ,  G03C1/49 ,  G03C1/50 ,  G03C1/72 ,  G03H5/00

CPC分类号： H01L31/0224 ,  G03C1/735 ,  G03C5/56 ,  H01L21/2254 ,  H01L21/265 ,  H01L21/312 ,  H01L51/0051 ,  Y10S430/143 ,  Y10S430/165

摘要： Metallic salts of organic charge-transfer agents, such as TCNQ, TNAP, TCNE and DDQ and their derivatives, can be processed by an electron beam for a variety of useful electronic and optical applications. The metallic charge transfer salts can be used to deposit high resolution conductive lines directly without developing solutions or subsequent metallization steps. The compounds can also be employed in the conventional manner as resists for doping (i.e., ion diffusion or implantation) and to diffuse metals into substrates. In particular, electronic devices, optical devices and image-storage devices are disclosed which can be formed by simple electron beam processed of metal charge-transfer salt films deposited on substrates.

摘要翻译： 有机电荷转移剂如TCNQ，TNAP，TCNE和DDQ及其衍生物的金属盐可以通过电子束加工，用于各种有用的电子和光学应用。 金属电荷转移盐可用于直接沉积高分辨率导电线而无需显影溶液或随后的金属化步骤。 化合物也可以以常规方式用作掺杂用抗蚀剂（即离子扩散或注入）并将金属扩散到基底中。 特别地，公开了电子器件，光学器件和图像存储器件，其可以通过沉积在衬底上的金属电荷转移盐膜的简单电子束加工形成。