公开(公告)号：US09377689B2

公开(公告)日：2016-06-28

申请号：US14807072

申请日：2015-07-23

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Katsuya Takemura ,  Hiroyuki Urano ,  Masashi Iio ,  Takayuki Fujiwara ,  Koji Hasegawa

IPC分类号： G03F7/075 ,  C08G77/52 ,  G03F7/40 ,  G03F7/38 ,  C07C39/21 ,  C09D183/14 ,  C08L83/14 ,  H01L21/312 ,  C08G77/12 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/038 ,  G03F7/09 ,  G03F7/11

CPC分类号： G03F7/0757 ,  C07C39/21 ,  C08G77/12 ,  C08G77/52 ,  C08L83/14 ,  C09D183/14 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/09 ,  G03F7/11 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/2037 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40 ,  H01L21/312 ,  H01L21/321

摘要： A silicone structure-bearing polymer comprising recurring units derived from a bis(4-hydroxy-3-allylphenyl) derivative and having a Mw of 3,000-500,000 is provided. A chemically amplified negative resist composition comprising the polymer overcomes the stripping problem that a coating is stripped from metal wirings of Cu or Al, electrodes, and SiN substrates.

摘要翻译： 提供了含有衍生自双（4-羟基-3-烯丙基苯基）衍生物并具有3,000-500,000的Mw的重复单元的含硅结构的聚合物。 包含该聚合物的化学放大型负性抗蚀剂组合物克服了从Cu或Al，电极和SiN衬底的金属布线剥离涂层的剥离问题。

公开(公告)号：US09159577B2

公开(公告)日：2015-10-13

申请号：US14180409

申请日：2014-02-14

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Chun-Yu Lin ,  Feng-Yuan Chiu ,  Bing-Syun Yeh ,  Yi-Jie Chen ,  Ying-Chou Cheng ,  I-Chang Shih ,  Ru-Gun Liu ,  Shih-Ming Chang

IPC分类号： H01L21/308 ,  H01L21/306 ,  H01L21/311 ,  H01L21/312 ,  H01L21/033 ,  H01L21/3065 ,  G03F1/36

CPC分类号： H01L21/312 ,  G03F1/36 ,  H01L21/0274 ,  H01L21/3083 ,  H01L21/31144

摘要： According to an exemplary embodiment, a method of forming a substrate pattern having an isolated region and a dense region is provided. The method includes the following operations: forming a first photoresist layer over the substrate; exposing the first photoresist layer through a first mask corresponding to the isolated region; developing the first photoresist layer to form a first pattern; forming a second photoresist layer over the substrate and the first pattern; exposing the second photoresist layer through a second mask corresponding to the substrate pattern; developing the second photoresist layer to form a second pattern; and etching the first pattern and the substrate to form the substrate pattern in the isolated region and the dense region.

摘要翻译： 根据示例性实施例，提供了形成具有隔离区域和致密区域的衬底图案的方法。 该方法包括以下操作：在衬底上形成第一光致抗蚀剂层; 通过对应于所述隔离区域的第一掩模曝光所述第一光致抗蚀剂层; 显影第一光致抗蚀剂层以形成第一图案; 在所述衬底和所述第一图案上形成第二光致抗蚀剂层; 通过对应于衬底图案的第二掩模曝光第二光致抗蚀剂层; 显影第二光致抗蚀剂层以形成第二图案; 并且蚀刻第一图案和基板以在隔离区域和致密区域中形成基板图案。

公开(公告)号：US20150140685A1

公开(公告)日：2015-05-21

申请号：US14082249

申请日：2013-11-18

申请人： TDK Corporation

发明人： Hisayoshi WATANABE ,  Ken FUJII ,  Takayuki NISHIZAWA ,  Masachika HASHINO

IPC分类号： H01L43/12 ,  G03F1/00 ,  H01L43/08

CPC分类号： H01L21/0274 ,  G03F1/00 ,  G03F7/203 ,  G03F7/70633 ,  G11B5/1278 ,  G11B5/3163 ,  G11B5/3958 ,  G11B5/3967 ,  G11B5/4886 ,  H01L21/312

摘要： A method for manufacturing a pattern multilayer body that has a plurality of pattern layers, and where a pattern is formed in each pattern layer, includes a step of forming an overlay pattern within an overlay pattern formation region, and in the step of forming the overlay pattern, a photoresist film is formed, and after a photoresist film is exposed via a main mask, a resist pattern is formed by exposing a sub mask(s). The main mask has a pattern light-shielding part that is commonly used for forming a pattern in each pattern layer, and each main light-shielding part for forming each overlay patter; and a sub mask has an opening part that is exposable to an unexposed region(s) within an overlay pattern formation region other than an unexposed region(s) on the photoresist film, which has been light-shielded by the main light-shielding part for forming a corresponding overlay pattern. This enables forming an overlay pattern that is high in position gap measurement accuracy in a direction orthogonal to the lamination direction when manufacturing a pattern multilayer body.

摘要翻译： 一种用于制造具有多个图案层并且在每个图案层中形成图案的图案多层体的方法包括在覆盖图案形成区域内形成覆盖图案的步骤，并且在形成覆盖层的步骤中 形成光致抗蚀剂膜，并且在通过主掩模曝光光致抗蚀剂膜之后，通过暴露子掩模形成抗蚀剂图案。 主掩模具有通常用于在每个图案层中形成图案的图案遮光部分和用于形成每个覆盖图案的每个主遮光部分; 并且子掩模具有可暴露于除光致抗蚀剂膜上的未曝光区域之外的覆盖图案形成区域内的未曝光区域的开口部分，其被主遮光部分遮光 用于形成对应的覆盖图案。 由此，能够在制造图案层叠体时形成与层叠方向正交的方向上的位置间隙测定精度高的覆盖图形。

公开(公告)号：US08987050B1

公开(公告)日：2015-03-24

申请号：US13690817

申请日：2012-11-30

申请人： David Jon Hiner ,  Ronald Patrick Huemoeller ,  Michael G. Kelly

发明人： David Jon Hiner ,  Ronald Patrick Huemoeller ,  Michael G. Kelly

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L21/312 ,  H01L21/31 ,  H01L21/768 ,  H01L23/48

CPC分类号： H01L21/76898 ,  H01L21/31 ,  H01L21/312 ,  H01L21/486 ,  H01L21/50 ,  H01L21/6835 ,  H01L23/147 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/3675 ,  H01L23/48 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/50 ,  H01L23/562 ,  H01L24/05 ,  H01L24/06 ,  H01L24/14 ,  H01L24/16 ,  H01L24/73 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/18 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68345 ,  H01L2224/02372 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/73253 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/1421 ,  H01L2924/1433 ,  H01L2924/14335 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/1616 ,  H01L2924/16251 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/3511 ,  H01L2224/11 ,  H01L2224/03

摘要： Methods and systems for backside dielectric patterning for wafer warpage and stress control are disclosed and may include thinning a semiconductor wafer comprising one or more through silicon vias (TSVs) and one or more die to expose the TSVs on a first surface of the wafer. The wafer may be passivated by depositing dielectric layers. The passivated wafer may be planarized and portions dielectric layers may be selectively removed to reduce a strain on the wafer. Metal contacts may be placed on the exposed TSVs prior to or after the selectively removal. The die may comprise functional electronic die or interposer die. Portions of the dielectric layers may be selectively removed in a radial pattern and may comprise a nitride and/or silicon dioxide layer. The wafer may be thinned to below a top surface of the TSVs. The dielectric layers may be selectively removed utilizing a dry etch process.

摘要翻译： 公开了用于晶片翘曲和应力控制的背面电介质图案化的方法和系统，并且可以包括使包括一个或多个通孔（TSV）和一个或多个管芯的半导体晶片变薄以暴露晶片的第一表面上的TSV。 可以通过沉积介电层来钝化晶片。 钝化的晶片可以被平坦化，并且可以选择性地去除部分电介质层以减小晶片上的应变。 可以在选择性移除之前或之后将金属触点放置在暴露的TSV上。 芯片可以包括功能电子管芯或插入件管芯。 可以以径向图案选择性地去除介电层的一部分，并且可以包括氮化物和/或二氧化硅层。 晶片可以变薄到TSV的顶表面之下。 可以使用干蚀刻工艺来选择性地去除电介质层。

公开(公告)号：US08791173B2

公开(公告)日：2014-07-29

申请号：US12737145

申请日：2009-06-03

申请人： Masayoshi Kotake ,  Hideki Etori ,  Toshihiro Ebine ,  Hiroshi Isozumi ,  Masanori Kasai

发明人： Masayoshi Kotake ,  Hideki Etori ,  Toshihiro Ebine ,  Hiroshi Isozumi ,  Masanori Kasai

IPC分类号： C09D11/10

CPC分类号： H01L21/02118 ,  C09D11/033 ,  C09D11/10 ,  H01L21/312 ,  H01L51/052 ,  H01L51/0545

摘要： An insulating ink composition for forming an insulating film, which sufficiently achieves a low calcination temperature, solvent resistance and an insulating property, is provided. Furthermore, an ink composition for forming an insulating film which can form, by the printing method, fine insulating film patterns necessary for formation of highly integrated organic transistors is provided. The present invention provides an ink composition which forms an insulating film, and includes an organic solvent, a polyvinylphenol-based resin, an epoxy resin and a cross-linking aid. Particularly, the ink composition is a composition wherein the organic solvent includes an organic solvent which has a vapor pressure of 11.3×102 Pa or higher at 20° C. and a boiling point of lower than 115° C. under atmospheric pressure and an organic solvent which has a vapor pressure of less than 11.3×102 Pa at 20° C. and a boiling point of 115° C. or higher under atmospheric pressure; the ink composition includes a extender component having a volume average particle diameter of 1 to 150 nm and a silicone-based releasing component.

摘要翻译： 提供一种用于形成绝缘膜的绝缘油墨组合物，其充分地实现了低煅烧温度，耐溶剂性和绝缘性。 此外，提供一种用于形成绝缘膜的油墨组合物，其可以通过印刷方法形成形成高度集成的有机晶体管所需的精细绝缘膜图案。 本发明提供一种形成绝缘膜的油墨组合物，其包括有机溶剂，聚乙烯基苯酚类树脂，环氧树脂和交联助剂。 特别地，油墨组合物是其中有机溶剂包括在大气压下在20℃和沸点低于115℃的蒸汽压为11.3×10 2 Pa或更高的有机溶剂的组合物和有机溶剂 在大气压下在20℃下蒸气压小于11.3×102Pa，沸点为115℃以上的溶剂; 油墨组合物包括体积平均粒径为1〜150nm的增量剂成分和硅酮类脱模成分。

公开(公告)号：US08772171B2

公开(公告)日：2014-07-08

申请号：US13665289

申请日：2012-10-31

申请人： Lam Research Corporation

发明人： Dean J. Larson

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/3065 ,  C23C16/45561 ,  F16K19/00 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/312 ,  Y10T29/49 ,  Y10T137/0491 ,  Y10T137/877

摘要： A gas switching system for a gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus, is provided. The chamber can include multiple zones, and the gas switching section can supply different gases to the multiple zones. The switching section can switch the flows of one or more gases, such that one gas can be supplied to the chamber while another gas can be supplied to a by-pass line, and then switch the gas flows.

摘要翻译： 提供了一种用于将等离子体处理装置等离子体处理室内的不同气体成分供给到气室的气体分配系统。 该室可以包括多个区域，并且气体切换部分可以向多个区域供应不同的气体。 开关部分可以切换一种或多种气体的流动，使得一个气体可以供应到腔室，而另一种气体可以被供给到旁路管线，然后切换气体流动。

公开(公告)号：US08710491B2

公开(公告)日：2014-04-29

申请号：US13131807

申请日：2009-11-26

申请人： Shinichi Maeda ,  Takahiro Kishioka

发明人： Shinichi Maeda ,  Takahiro Kishioka

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L31/062 ,  H01L27/146

CPC分类号： H01L51/052 ,  C07D239/60 ,  C07D403/06 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/28194 ,  H01L21/312 ,  H01L51/0541 ,  H01L51/0545

摘要： It is an object to provide a novel forming agent for a gate insulating film that not only provides high insulating properties for the gate insulating film but also takes account of the electric characteristics of a thin film transistor element. A forming agent for a gate insulating film of a thin film transistor characterized by comprising an oligomer compound or a polymer compound including a structural unit containing a pyrimidinetrione ring having a hydroxyalkyl-containing group as a substituent on a nitrogen atom; a gate insulating film formed by the forming agent; and a thin film transistor.

摘要翻译： 本发明的目的是提供一种用于栅极绝缘膜的新型成形剂，其不仅为栅极绝缘膜提供高绝缘性，而且还考虑了薄膜晶体管元件的电特性。 一种薄膜晶体管的栅极绝缘膜的成型剂，其特征在于包含低聚物化合物或包含含有在氮原子上具有含羟基烷基的基团作为取代基的嘧啶四酮环的结构单元的高分子化合物; 由形成剂形成的栅极绝缘膜; 和薄膜晶体管。

公开(公告)号：US08686412B2

公开(公告)日：2014-04-01

申请号：US11888072

申请日：2007-07-31

申请人： Gregory Herman ,  Benjamin Clark ,  Zhizhang Chen

发明人： Gregory Herman ,  Benjamin Clark ,  Zhizhang Chen

IPC分类号： H01L29/10 ,  H01L29/12

CPC分类号： H01L21/02118 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/312 ,  H01L29/7869

摘要： A microelectronic device includes a thin film transistor having an oxide semiconductor channel and an organic polymer passivation layer formed on the oxide semiconductor channel.

摘要翻译： 微电子器件包括具有形成在氧化物半导体沟道上的氧化物半导体沟道和有机聚合物钝化层的薄膜晶体管。

公开(公告)号：US08530596B2

公开(公告)日：2013-09-10

申请号：US12694292

申请日：2010-01-27

申请人： Yohko Sano ,  Kazuyoshi Fujita ,  Sumitoshi Asakuma

发明人： Yohko Sano ,  Kazuyoshi Fujita ,  Sumitoshi Asakuma

IPC分类号： C09D5/25 ,  C09D147/00 ,  C08F36/00 ,  C08F38/00

CPC分类号： H01L21/02118 ,  C08G61/02 ,  C08G2261/3327 ,  C08G2261/3328 ,  C08G2261/3424 ,  C08G2261/50 ,  C08G2261/592 ,  C09D145/00 ,  C09D147/00 ,  C09D165/00 ,  H01B3/307 ,  H01L21/02282 ,  H01L21/312 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A polymer and composition useful in forming an insulating film provided with a low permittivity, a high heat resistance, and a high mechanical strength and an insulating film obtained from these and an electronic device having the same are provided. The polymer for forming an insulating film according to the present invention is characterized by being obtained by polymerizing a reactive compound represented by Formula (1). The insulating film according to the present invention is formed using a composition for forming an insulating film including that polymer, has molecular spaces having an average space size of 0.7 nm to 5 nm, and has a permittivity of 2.3 or less. The electronic device according to the present invention has the insulating film. (wherein R1, R2, and R3 are the same or different from each other and respectively represent an organic group having a ring structure; X and Y are the same or different from each other and respectively represent an aromatic organic group having a reactive group; and n represents 0 or 1).

摘要翻译： 提供了用于形成具有低介电常数，高耐热性和高机械强度的绝缘膜的聚合物和组合物，以及由它们获得的绝缘膜和具有该绝缘膜的电子器件。 根据本发明的用于形成绝缘膜的聚合物的特征在于通过聚合由式（1）表示的反应性化合物来获得。 根据本发明的绝缘膜使用包含该聚合物的绝缘膜形成用组合物形成，具有平均空间尺寸为0.7nm〜5nm的分子空间，并且介电常数为2.3以下。 根据本发明的电子设备具有绝缘膜。 （其中R1，R2和R3彼此相同或不同，分别表示具有环结构的有机基团; X和Y彼此相同或不同，分别表示具有反应性基团的芳香族有机基团。 n表示0或1）。

公开(公告)号：US20130183827A1

公开(公告)日：2013-07-18

申请号：US13350136

申请日：2012-01-13

申请人： Dan Millward

发明人： Dan Millward

IPC分类号： H01L21/306 ,  H01L21/30

CPC分类号： H01L21/0273 ,  H01L21/0337 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/312

摘要： A method of patterning a substrate includes forming spaced first features over a substrate. Individual of the spaced first features include sidewall portions of different composition than material that is laterally between the sidewall portions. A mixture of immiscible materials is provided between the spaced first features. At least two of the immiscible materials are laterally separated along at least one elevation between adjacent spaced first features. The laterally separating forms a laterally intermediate region including one of the immiscible materials between two laterally outer regions including another of the immiscible materials along the one elevation. The laterally outer regions are removed and material of the spaced first features is removed between the sidewall portions to form spaced second features over the substrate. Other embodiments are disclosed.

摘要翻译： 图案化衬底的方法包括在衬底上形成间隔开的第一特征。 间隔开的第一特征的个体包括不同于侧壁部分之间的材料的不同组成的侧壁部分。 在间隔开的第一特征之间提供了不混溶材料的混合物。 至少两个不混溶材料沿着相邻隔开的第一特征之间的至少一个高度侧向分开。 横向分离形成横向中间区域，其包括在两个横向外部区域之间的不混溶材料之一，包括沿着一个高度的另一个不混溶材料。 移除横向外部区域并且在侧壁部分之间移除间隔开的第一特征的材料，以在基底上方形成间隔开的第二特征。 公开了其他实施例。