公开(公告)号：US20070165449A1

公开(公告)日：2007-07-19

申请号：US10577216

申请日：2004-10-26

申请人： Yuankai Zheng ,  Yihong Wu

发明人： Yuankai Zheng ,  Yihong Wu

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  H01L27/228 ,  H01L43/08

摘要： A magnetic memory device includes a plurality of transistors (316, 317) formed on a substrate and a common magnetic memory block (312) including multiple effective magnetoresistive elements (318, 319), a ferromagnetic recording (321), a non-magnetic space (323), and a free magnetic reading (322) layer formed above the transistors (316, 317). An extended common digital line (315) is located above the common magnetic memory block (312). The common magnetic memory block (312) is electrically connected with a respective source/drain electrode of the transistors (316, 317) through each a contact at a respective active area. The specific magnetization state of the ferromagnetic recording layer at the active areas can be changed by a heating process and applying an external field induced from the common digital line (315) and the bit (309, 311) or word (307) or word (307) lines. The change in resistance of the effective magnetoresistive element (318, 319) can be detected by means of changing the magnetization state of the free magnetic reacting layer during reading, thus a smaller switching field is required.

摘要翻译： 磁存储器件包括形成在衬底上的多个晶体管（316,317）和包含多个有效磁阻元件（318,319），铁磁记录（321），非磁性空间 （323）和形成在晶体管（316,317）上方的自由磁读取（322）层。 扩展的公共数字线路（315）位于公共磁存储器块（312）的上方。 公共磁存储块（312）通过在相应的有效区域上的每个触点与晶体管（316,317）的相应源极/漏极电连接。 可以通过加热处理来改变有源区域的铁磁记录层的特定磁化状态，并施加从公用数字线（315）和位（309,311）或字（307）或字（ 307）线。 可以通过在读取期间改变自由磁反应层的磁化状态来检测有效磁阻元件（318,319）的电阻变化，因此需要较小的开关场。

公开(公告)号：US08508988B2

公开(公告)日：2013-08-13

申请号：US13527845

申请日：2012-06-20

申请人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

发明人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

IPC分类号： G11C11/00

CPC分类号： G11C11/161

摘要： A magnetic tunnel junction having a compsensation element is disclosed. The magnetic tunnel junction includes a reference element, and a compensation element having an opposite magnetization moment to a magnetization moment of the reference element. A free magnetic layer is between the reference element and the compensation element, and an electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic layer from the reference element. The free magnetic layer includes Co100-X-YFeXBY wherein X is a value being greater than 30 and Y is a value being greater than 15.

摘要翻译： 公开了一种具有补偿元件的磁性隧道结。 磁性隧道结包括参考元件和补偿元件，该补偿元件具有与参考元件的磁化矩相反的磁化力矩。 自由磁性层在参考元件和补偿元件之间，并且电绝缘和非磁性隧道势垒层将自由磁性层与参考元件分开。 自由磁性层包括Co100-X-YFeXBY，其中X是大于30的值，Y是大于15的值。

公开(公告)号：US08466525B2

公开(公告)日：2013-06-18

申请号：US13040163

申请日：2011-03-03

申请人： Yuankai Zheng ,  Xiaohua Lou ,  Haiwen Xi ,  Michael Xuefei Tang

发明人： Yuankai Zheng ,  Xiaohua Lou ,  Haiwen Xi ,  Michael Xuefei Tang

IPC分类号： H01L29/82 ,  G11C11/02

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense element (RSE) has a heat assist region, magnetic tunneling junction (MTJ), and pinned region. When a first logical state is written to the MTJ with a spin polarized current, the pinned and heat assist regions each have a substantially zero net magnetic moment. When a second logical state is written to the MTJ with a static magnetic field, the pinned region has a substantially zero net magnetic moment and the heat assist region has a non-zero net magnetic moment.

摘要翻译： 用于将数据写入非易失性存储单元的装置和相关方法，例如自旋转矩传递随机存取存储器（STRAM）。 根据一些实施例，电阻感测元件（RSE）具有热辅助区域，磁性隧道结（MTJ）和固定区域。 当以旋转极化电流将第一逻辑状态写入MTJ时，固定和热辅助区域各自具有基本为零的净磁矩。 当第二逻辑状态被写入具有静态磁场的MTJ时，被钉扎区域具有基本为零的净磁矩，并且热辅助区域具有非零净磁矩。

公开(公告)号：US08289756B2

公开(公告)日：2012-10-16

申请号：US12502213

申请日：2009-07-13

申请人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Haiwen Xi ,  Xiaobin Wang ,  Wei Tian ,  Xiaohua Lou

发明人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Haiwen Xi ,  Xiaobin Wang ,  Wei Tian ,  Xiaohua Lou

IPC分类号： G11C11/00

CPC分类号： G11C11/161

摘要： An apparatus that includes a magnetic structure including a reference layer; and a free layer; an exchange coupling spacer layer; and a stabilizing layer, wherein the exchange coupling spacer layer is between the magnetic structure and the stabilizing layer and exchange couples the free layer of the magnetic structure to the stabilizing layer.

摘要翻译： 一种包括具有参考层的磁性结构的装置; 和自由层; 交换耦合间隔层; 和稳定层，其中所述交换耦合间隔层位于所述磁性结构和所述稳定层之间并且将所述磁性结构的自由层与所述稳定层交换。

公开(公告)号：US20120230092A1

公开(公告)日：2012-09-13

申请号：US13474838

申请日：2012-05-18

申请人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Haiwen Xi

发明人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Haiwen Xi

IPC分类号： G11C11/15

CPC分类号： G11C11/15 ,  G11C11/1675 ,  G11C11/5607

摘要： Methods of writing to a multi-bit MRAM memory unit are described. The method includes to self-detected writing to a multi-bit (i.e., multilevel) thermally assisted MRAM. The self-detected writing increases a reading margin between data state levels and decreases reading margin variability due to cell resistance variation.

摘要翻译： 描述写入多位MRAM存储器单元的方法。 该方法包括对多位（即多级）热辅助MRAM进行自检测写入。 自检的写入会增加数据状态级之间的读取余量，并降低由于单元格电阻变化而导致的读取边缘变化。

公开(公告)号：US08213222B2

公开(公告)日：2012-07-03

申请号：US13210436

申请日：2011-08-16

申请人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

发明人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

IPC分类号： G11C11/00

CPC分类号： G11C11/161

摘要： A magnetic tunnel junction having a compsensation element is disclosed. The magnetic tunnel junction includes a reference element, and a compensation element having an opposite magnetization moment to a magnetization moment of the reference element. A free magnetic layer is between the reference element and the compensation element, and an electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic layer from the reference element. The free magnetic layer includes Co100-X-YFeXBY wherein X is a value being greater than 30 and Y is a value being greater than 15.

摘要翻译： 公开了一种具有补偿元件的磁性隧道结。 磁性隧道结包括参考元件和补偿元件，该补偿元件具有与参考元件的磁化矩相反的磁化力矩。 自由磁性层在参考元件和补偿元件之间，并且电绝缘和非磁性隧道势垒层将自由磁性层与参考元件分开。 自由磁性层包括Co100-X-YFeXBY，其中X是大于30的值，Y是大于15的值。

公开(公告)号：US07999337B2

公开(公告)日：2011-08-16

申请号：US12501902

申请日：2009-07-13

申请人： Yuankai Zheng ,  Xiaohua Lou ,  Haiwen Xi ,  Michael Xuefei Tang

发明人： Yuankai Zheng ,  Xiaohua Lou ,  Haiwen Xi ,  Michael Xuefei Tang

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense element (RSE) has a heat assist region, magnetic tunneling junction (MTJ), and pinned region. When a first logical state is written to the MTJ with a spin polarized current, the pinned and heat assist regions each have a substantially zero net magnetic moment. When a second logical state is written to the MTJ with a static magnetic field, the pinned region has a substantially zero net magnetic moment and the heat assist region has a non-zero net magnetic moment.

摘要翻译： 用于将数据写入非易失性存储单元的装置和相关方法，例如自旋转矩传递随机存取存储器（STRAM）。 根据一些实施例，电阻感测元件（RSE）具有热辅助区域，磁性隧道结（MTJ）和固定区域。 当以旋转极化电流将第一逻辑状态写入MTJ时，固定和热辅助区域各自具有基本为零的净磁矩。 当第二逻辑状态被写入具有静态磁场的MTJ时，被钉扎区域具有基本为零的净磁矩，并且热辅助区域具有非零净磁矩。

公开(公告)号：US07985994B2

公开(公告)日：2011-07-26

申请号：US12239884

申请日：2008-09-29

申请人： Yuankai Zheng ,  Dimitar V. Dimitrov

发明人： Yuankai Zheng ,  Dimitar V. Dimitrov

IPC分类号： H01L21/02

CPC分类号： H01L29/82 ,  G11C11/16 ,  G11C11/161

摘要： Flux-closed spin-transfer torque memory having a specular insulative spacer is disclosed. A flux-closed spin-transfer torque memory unit includes a multilayer free magnetic element including a first free magnetic layer anti-ferromagnetically coupled to a second free magnetic layer through an electrically insulating and electronically reflective layer. An electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic element from a reference magnetic layer.

摘要翻译： 公开了具有镜面绝缘间隔物的磁通闭合自旋转移转矩存储器。 磁通闭合自旋转移转矩存储单元包括多层自由磁性元件，其包括通过电绝缘和电子反射层反铁磁耦合到第二自由磁性层的第一自由磁性层。 电绝缘和非磁性隧道势垒层将自由磁性元件与参考磁性层分离。

公开(公告)号：US20110149642A1

公开(公告)日：2011-06-23

申请号：US13040163

申请日：2011-03-03

申请人： Yuankai Zheng ,  Xiaohua Lou ,  Haiwen Xi ,  Michael Xuefei Tang

发明人： Yuankai Zheng ,  Xiaohua Lou ,  Haiwen Xi ,  Michael Xuefei Tang

IPC分类号： G11C11/15

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense element (RSE) has a heat assist region, magnetic tunneling junction (MTJ), and pinned region. When a first logical state is written to the MTJ with a spin polarized current, the pinned and heat assist regions each have a substantially zero net magnetic moment. When a second logical state is written to the MTJ with a static magnetic field, the pinned region has a substantially zero net magnetic moment and the heat assist region has a non-zero net magnetic moment.

公开(公告)号：US20110007430A1

公开(公告)日：2011-01-13

申请号：US12501902

申请日：2009-07-13

申请人： Yuankai Zheng ,  Xiaohua Lou ,  Haiwen Xi ,  Michael Xuefei Tang

发明人： Yuankai Zheng ,  Xiaohua Lou ,  Haiwen Xi ,  Michael Xuefei Tang

IPC分类号： G11B5/33

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense element (RSE) has a heat assist region, magnetic tunneling junction (MTJ), and pinned region. When a first logical state is written to the MTJ with a spin polarized current, the pinned and heat assist regions each have a substantially zero net magnetic moment. When a second logical state is written to the MTJ with a static magnetic field, the pinned region has a substantially zero net magnetic moment and the heat assist region has a non-zero net magnetic moment.