公开(公告)号：US6139400A

公开(公告)日：2000-10-31

申请号：US63006

申请日：1998-04-21

申请人： Shuzo Sato ,  Hiizu Ohtorii ,  Yasuharu Ohkawa ,  Yutaka Ozawa ,  Taiichi Kusano

发明人： Shuzo Sato ,  Hiizu Ohtorii ,  Yasuharu Ohkawa ,  Yutaka Ozawa ,  Taiichi Kusano

IPC分类号： B24B37/04 ,  B24B49/16 ,  B24B49/00

CPC分类号： B24B37/04 ,  B24B49/16

摘要： Disclosed is a polishing system used for polishing a surface to be polished of an object to be polished by a polishing pad, which is capable of improving uniformity of the surface to be polished of the object to be polished by positively, accurately adjusting a polishing pressure, and a polishing method using the polishing system. Concretely, the surface to be polished of a wafer as the object to be polished is polished by relatively moving, along a plane, a polishing surface of the rotating polishing pad and the surface to be polished of the wafer in slide-contact with each other, and adjusting a pressing force applied from the polishing pad to the wafer in accordance with a polishing pressure previously set depending on a relative-positional relationship between the polishing surface of the polishing pad and the surface to be polished of the wafer.

摘要翻译： 公开了一种抛光系统，用于通过抛光垫抛光待抛光物体的待抛光表面，该抛光系统能够通过积极地精确地调节抛光压力来提高待抛光物体的抛光表面的均匀性 ，以及使用该研磨系统的研磨方法。 具体地说，作为待研磨对象物的被研磨物的被研磨面，沿着平面相对移动抛光垫的研磨面和晶片的被研磨面相互滑动地进行研磨， 并且根据预先根据抛光垫的抛光表面和待抛光表面之间的相对位置关系预先设定的抛光压力，调整从抛光垫施加到晶片的压力。