公开(公告)号：US07216021B2

公开(公告)日：2007-05-08

申请号：US10902119

申请日：2004-07-30

申请人： Masahiro Matsubara ,  Yasushi Harada ,  Yasuo Sato ,  Nobuhisa Kobayashi ,  Junichi Yamada

发明人： Masahiro Matsubara ,  Yasushi Harada ,  Yasuo Sato ,  Nobuhisa Kobayashi ,  Junichi Yamada

IPC分类号： G05D23/00

CPC分类号： H02J3/00 ,  H02J2003/007 ,  Y02E60/76 ,  Y04S40/22

摘要： A system for managing energy consumption has a data storage module, a calculation module and an operation planning module. The data storage module stores an operational past record of a unit belonging to a facility to be managed by the system. The calculation module calculates wasteful energy consumption for the unit based on the operational past record stored in the data storage module. The operation planning module generates an operational plan for the unit belonging to the facility based on the wasteful energy consumption calculated by the calculation module.

摘要翻译： 用于管理能耗的系统具有数据存储模块，计算模块和操作计划模块。 数据存储模块存储属于要由系统管理的设施的单元的操作过去记录。 计算模块基于存储在数据存储模块中的操作过去记录来计算单元的浪费能量消耗。 操作规划模块基于由计算模块计算的浪费的能量消耗，为属于设施的单元生成操作计划。

公开(公告)号：US20070064479A1

公开(公告)日：2007-03-22

申请号：US11523550

申请日：2006-09-20

申请人： Junichi Yamada

发明人： Junichi Yamada

IPC分类号： G11C16/06

CPC分类号： G11C16/28 ,  G11C16/24

摘要： A non-volatile semiconductor memory device includes a memory cell, and a reference cell including a same structure as the memory cell. A detecting circuit detects a timing when a voltage of a reference bit line connected with the reference cell becomes lower than or equal to a setting voltage, and generates a control signal in response to the detection of the timing. A sense amplifier senses and amplifies a difference between a voltage of a bit line connected with the memory cell and a reference voltage in response to the control signal.

摘要翻译： 非易失性半导体存储器件包括存储单元和与存储单元相同结构的参考单元。 检测电路检测与参考单元相连的基准位线的电压变为低于或等于设定电压的定时，并根据定时的检测产生控制信号。 感测放大器响应于控制信号，感测并放大与存储单元连接的位线的电压与参考电压之间的差。

公开(公告)号：USD536891S1

公开(公告)日：2007-02-20

申请号：US29238590

申请日：2005-09-16

申请人： Yoshiyuki Miyake ,  Taro Mochida ,  Junichi Yamada ,  Nobutaka Kato

设计人： Yoshiyuki Miyake ,  Taro Mochida ,  Junichi Yamada ,  Nobutaka Kato

公开(公告)号：US20050281127A1

公开(公告)日：2005-12-22

申请号：US10986033

申请日：2004-11-12

申请人： Harumi Okuno ,  Junichi Yamada ,  Hisashi Nagata

发明人： Harumi Okuno ,  Junichi Yamada ,  Hisashi Nagata

IPC分类号： G02F1/133 ,  G09G3/20 ,  G09G3/36 ,  G11C8/00

CPC分类号： G09G3/3685 ,  G09G3/3614 ,  G09G2310/0297 ,  G09G2310/06 ,  G09G2320/0219

摘要： A method of driving source lines is arranged as follows: One output signal line S61 of a source driver is connected to a plurality of lines corresponding to respective source lines SR7 through SB12, and these source lines from SR7 (starting data line) to SB12 (terminating data line) are grouped as one block (group). In each block, a signal voltage of a divided output is supplied to the source lines during a first horizontal period T, while a signal voltage whose polarity is opposite to that of the aforesaid output is supplied to the source lines in a second horizontal period that is after the first horizontal period. In each of the horizontal periods, the source lines SR7 through SB12 are subjected to sequential selection. In addition to this, the source line SB12 is selected before turning the source line SR7 off. With this, a method of driving source lines, which can restrain (eliminate) the voltage variation on each source line and pixel electrode on account parasitic capacities between source lines, can be realized.

摘要翻译： 驱动源极线的方法如下：源极驱动器的一个输出信号线S 61连接到对应于各个源极线SR 7至SB 12的多条线，并且来自SR 7（起始数据线 ）到SB 12（终止数据线）被分组为一个块（组）。 在每个块中，分割输出的信号电压在第一水平周期T期间被提供给源极线，而极性与上述输出的极性相反的信号电压在第二水平周期中被提供给源极线， 是在第一个水平时期之后。 在每个水平周期中，对源极线SR7至SB12进行顺序选择。 除此之外，在将源极线SR7截止之前选择源极线SB 12。 由此，可以实现一种驱动源极线的方法，其可以考虑到源极线之间的寄生电容来抑制（消除）每个源极线和像素电极上的电压变化。

公开(公告)号：US06879529B2

公开(公告)日：2005-04-12

申请号：US10773290

申请日：2004-02-09

申请人： Junichi Yamada

发明人： Junichi Yamada

IPC分类号： G11C29/04 ,  G11C29/00 ,  G11C7/00 ,  G11C8/00 ,  G11C11/22

CPC分类号： G11C29/789 ,  G11C11/22 ,  G11C29/848

摘要： In a semiconductor memory incorporating therein a circuit for relieving a defective memory cell, a memory cell array constituted of a number of main memory cells MC00 to MCij is added with one column of redundant memory cells MC0j+1 to MCij+1 and one word line of substitution information storing memory cells MCRA0 to MCRAj+1. In only a first cycle after the power supply is turned on, the substitution information DR0 to DRj is read out from the substitution information storing memory cells by use of a writing/reading circuit associated with the main memory cells, and is transferred to and held in a control circuit. In a second and succeeding cycles, the control circuit generates Y selection circuit control signals CS0 to CSj on the basis of the substitution information held in the control circuit, and a Y selection circuit is controlled by the control signals CS0 to CSj so as to selectively connect the columns other than a defective column to an input/output line. Thus, a chip area overhead attributable to the installation of the defective memory cell relief circuit is minimized. In addition, an address comparing circuit for a defective memory cell substitution is no longer necessary, and an access time overhead attributable to the address substitution operation does not occur.

摘要翻译： 在其中结合有用于消除缺陷存储单元的电路的半导体存储器中，由多个主存储单元MC00至MCij构成的存储单元阵列中添加有一列冗余存储单元MC0j + 1至MCij + 1和一个字线 存储单元MCRA0至MCRAj + 1的替换信息。 在电源接通之后的第一周期中，通过使用与主存储单元相关联的写入/读取电路从替代信息存储单元读出替代信息DR0至DRj，并被转移并保持 在控制电路中。 在第二次和接下来的周期中，控制电路根据保持在控制电路中的替换信息，生成Y选择电路控制信号CS0至CSj，并且Y选择电路由控制信号CS0至CSj控制，以便选择性地 将有缺陷的列以外的列连接到输入/输出线。 因此，由于安装有缺陷的存储单元释放电路引起的芯片面积开销被最小化。 此外，不再需要用于缺陷存储器单元替换的地址比较电路，并且不发生归因于地址替换操作的访问时间开销。

公开(公告)号：US06819604B2

公开(公告)日：2004-11-16

申请号：US10211378

申请日：2002-08-05

申请人： Junichi Yamada

发明人： Junichi Yamada

IPC分类号： G11C2900

CPC分类号： G11C29/789 ,  G11C11/22 ,  G11C29/848

摘要： In a semiconductor memory incorporating therein a circuit for relieving a defective memory cell, a memory cell array constituted of a number of main memory cells MC00 to MCij is added with one column of redundant memory cells MC0j+1 to MCij+1 and one word line of substitution information storing memory cells MCRA0 to MCRAj+1. In only a first cycle after the power supply is turned on, the substitution information DR0 to DRj is read out from the substitution information storing memory cells by use of a writing/reading circuit associated with the main memory cells, and is transferred to and held in a control circuit. In a second and succeeding cycles, the control circuit generates Y selection circuit control signals CS0 to CSj on the basis of the substitution information held in the control circuit, and a Y selection circuit is controlled by the control signals CS0 to CSj so as to selectively connect the columns other than a defective column to an input/output line. Thus, a chip area overhead attributable to the installation of the defective memory cell relief circuit is minimized. In addition, an address comparing circuit for a defective memory cell substitution is no longer necessary, and an access time overhead attributable to the address substitution operation does not occur.

公开(公告)号：US06278630B1

公开(公告)日：2001-08-21

申请号：US09218084

申请日：1998-12-22

申请人： Junichi Yamada

发明人： Junichi Yamada

IPC分类号： G11C1122

CPC分类号： G11C11/22

摘要： A ferroelectric memory device includes a plurality of sets of bit lines which are connected to differential sense amplifiers and to a plurality of memory cells. Each memory cell contains one ferroelectric capacitor and one transistor, with a first electrode of the ferroelectric capacitor being connected to a plate line and the second electrode of the ferroelectric capacitor being connected to the source of the transistor. The gate of the transistor is connected to a word line and the drain is connected to a bit line. The memory cells generate a reference voltage which is provided to the differential sense amplifiers as a reference voltage for comparison with an data stored in the memory cells.

摘要翻译： 铁电存储器件包括连接到差分读出放大器和多个存储器单元的多组位线。 每个存储单元包含一个铁电电容器和一个晶体管，其中铁电电容器的第一电极连接到板线，并且铁电电容器的第二电极连接到晶体管的源极。 晶体管的栅极连接到字线，漏极连接到位线。 存储单元产生作为参考电压提供给差分读出放大器的参考电压，用于与存储在存储单元中的数据进行比较。

公开(公告)号：US5521842A

公开(公告)日：1996-05-28

申请号：US157273

申请日：1993-11-26

申请人： Junichi Yamada

发明人： Junichi Yamada

IPC分类号： G03D13/00 ,  G05B23/02 ,  G06F11/22 ,  G06F17/40 ,  G06F17/00

CPC分类号： G05B23/0294

摘要： A diagnostic device displays at least an optimum countermeasure in response to a failure code inputted in accordance with a failure of a machine, as a result of searching a countermeasure map, in which each failure code is associated with at least a countermeasure code. After taking a countermeasure with reference to display of the diagnostic device, the repairer inputs a countermeasure code corresponding to the taken countermeasure and a result code indicating the result of the countermeasure. The failure code, the countermeasure code and the result code are stored as repair data in the diagnostic device. The repair data is sent to a host computer over a telephone line. The host computer gathers the statistics of the repair data to revise the countermeasure map.

摘要翻译： 作为搜索对策图的结果，诊断装置响应于根据机器的故障而输入的故障码，至少显示最佳对策，其中每个故障代码与至少一个对策代码相关联。 在参照诊断装置的显示采取对策之后，维修人员输入对应于采取的对策的对策代码和指示对策结果的结果代码。 故障代码，对策代码和结果代码作为修复数据存储在诊断设备中。 修复数据通过电话线路发送到主机。 主机收集维修数据的统计数据，修改对策图。

公开(公告)号：US4765408A

公开(公告)日：1988-08-23

申请号：US844438

申请日：1986-03-26

申请人： Hiroshi Morita ,  Yasuyuki Kawada ,  Junichi Yamada ,  Toshiyuki Ukigai

发明人： Hiroshi Morita ,  Yasuyuki Kawada ,  Junichi Yamada ,  Toshiyuki Ukigai

IPC分类号： B01F17/42 ,  C09K8/02 ,  C09K8/58 ,  C09K8/584 ,  E21B43/22

CPC分类号： C09K8/584 ,  Y10S507/938

摘要： A micellar slug for use in the recovery of oil, consisting essentially of a surfactant and an aqueous medium, which may contain an inorganic salt. The surfactant contains:(a) at least one alkoxy sulfonate having the general formula (I): ##STR1## wherein R.sup.1 represents an alkyl group having 1 to 26 carbon atoms, R.sup.2 represents an alkyl or alkenyl group having 1 to 24 carbon atoms, R.sup.3 represents hydrogen or an alkyl group having 1 to 24 carbon atoms, n is a number of 0 to 5, and X represents an alkali metal, an alkaline earth metal, ammonium, or an organic amine, and(b) at least one other surfactant.The micellar slug obtains large intake amounts of oil and brine in the resultant micro-emulsions and a good dilution stability of the micro-emulsion, and is capable of recovering oil from subterranean reservoirs having a high salt content at a high oil recovery efficiency.

摘要翻译： 用于回收油的胶束塞，主要由表面活性剂和含水介质组成，其可以含有无机盐。 表面活性剂包含：（a）至少一种具有通式（I）的烷氧基​​磺酸盐：其中R 1表示具有1至26个碳原子的烷基，R 2表示具有1至24个碳原子的烷基或链烯基 碳原子，R 3表示氢或碳原子数1〜24的烷基，n表示0〜5的数，X表示碱金属，碱土金属，铵或有机胺，（b） 至少一种其他表面活性剂。 所得微乳液中的胶束块获得大量的油和盐水，并且微乳液具有良好的稀释稳定性，并且能够以高的油回收效率从具有高盐含量的地下储层中回收油。

公开(公告)号：US4733728A

公开(公告)日：1988-03-29

申请号：US798786

申请日：1985-11-18

申请人： Hiroshi Morita ,  Yasuyuki Kawada ,  Junichi Yamada ,  Toshiyuki Ukigai

发明人： Hiroshi Morita ,  Yasuyuki Kawada ,  Junichi Yamada ,  Toshiyuki Ukigai

IPC分类号： C09K8/02 ,  C09K8/584 ,  E21B43/22

CPC分类号： C09K8/584 ,  Y10S507/938

摘要： A micellar slug for use in the recovery of oil, consisting essentially of a surfactant and an aqueous medium, which may contain an inorganic salt. The surfactant contains, as essential constituents,(a) at least one internal olefin sulfonate having 10 to 26 carbon atoms; and(b) 0.1 to 60 parts by weight, based on 100 parts by weight of the internal olefin sulfonate, of at least one ether sulfonate having the general formula:R.sup.1 --O--(R.sup.2 O).sub.m --(R.sup.3 O).sub.n --R.sup.4 --SO.sub.3 X (I) wherein R.sup.1 represents an alkyl or alkenyl phenyl group having 12 to 26 carbon atoms or an alkyl or alkenyl group having 10 to 24 carbon atoms, R.sup.2 represents C.sub.2 H.sub.4 or C.sub.3 H.sub.6, R.sup.3 represents C.sub.2 H.sub.4 or C.sub.3 H.sub.6, R.sup.4 represents C.sub.2 H.sub.4, C.sub.3 H.sub.6, or CH.sub.2 CH(OH)CH.sub.2, n.gtoreq.0, m.gtoreq.0, and n+m=0 to 15, and X represents an alkali metal or an alkaline earth metal.

摘要翻译： 用于回收油的胶束塞，主要由表面活性剂和含水介质组成，其可以含有无机盐。 表面活性剂含有（a）至少一种具有10-26个碳原子的内烯烃磺酸盐作为必需成分; 和（b）0.1至60重量份，基于100重量份的内烯烃磺酸盐，至少一种具有以下通式的醚磺酸盐：R 1 -O-（R 20）m - （R 3 O）n -R 4 - SO 3 X（I）其中R 1表示碳原子数12〜26的烷基或烯基苯基或碳原子数为10〜24的烷基或烯基，R2表示C2H4或C3H6，R3表示C2H4或C3H6，R4表示C2H4，C3H6， 或CH 2 CH（OH）CH 2，n> = 0，m> = 0，n + m = 0〜15，X表示碱金属或碱土金属。