摘要:
Provided is a method for preparing high-purity elemental phosphorus capable of simultaneously reducing both arsenic and antimony from crude white phosphorus containing a great amount of arsenic and antimony as impurities.Provided is a method for preparing high-purity elemental phosphorus, the method including bringing liquid crude white phosphorus into contact with an iodic acid-containing compound selected from iodic acid and iodates in an aqueous solvent in the presence of a chelating agent, wherein the chelating agent is selected from polyvalent carboxylic acids, polyvalent carboxylates, phosphonic acid and phosphonates.
摘要:
A process is disclosed for recovering elemental phosphorus from an aqueous sludge and converting the residue into non-hazardous waste. The sludge is separated into (1) a slurry of water containing suspended phosphorus and dirt particles and (2) coarse solids. A flocculating agent is added to the slurry to agglomerate the suspended phosphorus and dirt particles, which are recovered from the water and are heated to melt elemental phosphorus particles. A coalescing agent is added to coalesce the melted elemental phosphorus, which is separated from the dirt particles. The coarse solids are mixed with hot water to melt the phosphorus sludge, which is separated from inert solids. The solids are heated to burn any residual elemental phosphorus. The separated molten phosphorus sludge is stirred with a solution of chromic acid to recover the phosphorus as a separate phase. A reducing agent is added to the remaining water and solids to reduce the Crnull6 to Crnull3. Finally, an alkali is added to the water and solids to react the residual phosphorus and form phosphorous compounds. The reaction mass is filtered and the filter cake can be placed in a landfill as a non-hazardous waste.
摘要:
MP.sub.15, where M is an alkali metal is used in a generator of P.sub.4 gas. KP.sub.15 is preferred. The generator is heated to produce the P.sub.4 gas. The generator may be used in various deposition processes such as chemical vapor deposition, vacuum evaporation, and molecular beam deposition. It is particularly useful in high vacuum processes below 10.sup.-3 Torr, particularly below 10.sup.-4 Torr such as vacuum evaporation and molecular beam deposition, for example vapor phase epitaxy and molecular beam epitaxy.