公开(公告)号：US20110031542A1

公开(公告)日：2011-02-10

申请号：US12904903

申请日：2010-10-14

Applicant: Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

Inventor： Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

IPC: H01L31/14 ,  H01L29/66

CPC classification number: H01L27/14689 ,  H01L21/26513 ,  H01L27/1463

Abstract: Provided is a method for fabricating an image sensor device that includes providing a substrate having a front side and a back side; patterning a photoresist on the front side of the substrate to define an opening having a first width, the photoresist having a first thickness correlated to the first width; performing an implantation process through the opening using an implantation energy correlated to the first thickness thereby forming a first doped isolation feature; forming a light sensing feature adjacent to the first doped isolation feature, the light sensing feature having a second width; and thinning the substrate from the back side so that the substrate has a second thickness that does not exceed twice a depth of the first doped isolation feature. A pixel size is substantially equal to the first and second widths.

Abstract translation: 提供一种制造图像传感器装置的方法，该图像传感器装置包括提供具有正面和背面的基板; 在衬底的前侧上形成光致抗蚀剂以限定具有第一宽度的开口，光致抗蚀剂具有与第一宽度相关的第一厚度; 通过使用与第一厚度相关的注入能量通过开口执行注入工艺，从而形成第一掺杂隔离特征; 形成与所述第一掺杂隔离特征相邻的光感测特征，所述光感测特征具有第二宽度; 以及从背面使衬底变薄，使得衬底具有不超过第一掺杂隔离特征深度的两倍的第二厚度。 像素尺寸基本上等于第一和第二宽度。

公开(公告)号：US20100181635A1

公开(公告)日：2010-07-22

申请号：US12405454

申请日：2009-03-17

Applicant: Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

Inventor： Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

IPC: H01L31/04 ,  H01L31/18

CPC classification number: H01L27/14689 ,  H01L27/1463 ,  H01L27/14643

Abstract: Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.

Abstract translation: 提供了一种制造图像传感器装置的方法。 该方法包括提供具有前侧和后侧的半导体衬底，在半导体衬底的前侧形成第一隔离结构，从背面减薄半导体衬底，并在第二隔离结构的背面形成第二隔离结构 半导体衬底。 第一和第二隔离结构相对于彼此移位。