SHAPER CUTTER HEADS AND ROUTER BITS WITH INDEXING FEATURE

    公开(公告)号:US20240042532A1

    公开(公告)日:2024-02-08

    申请号:US18489111

    申请日:2023-10-18

    申请人: Henry Wang

    发明人: Henry Wang

    IPC分类号: B23C5/10

    CPC分类号: B23C5/10

    摘要: An apparatus (1300), including: a shaper cutter head (1308) having: a body (1312); a bore (1314) through the body; and a cutter 1310) secured to the body. Along a longitudinal axis (1306), the cutter has: a miter profile, a groove profile and a tongue profile for cutting a miter. The body has a portion (1352) comprising a recess (1320) disposed between the miter profile of the cutter and an end of the body. The recess defines a flat indexing surface (1326) protruding radially outwards from a portion of the body. When the shaper cutter head is rotated about the longitudinal axis, the body defines a body sweep (1360). The flat indexing surface is recessed from the body sweep.

    Push block safe index scale
    52.
    发明授权

    公开(公告)号:US11731306B1

    公开(公告)日:2023-08-22

    申请号:US17982613

    申请日:2022-11-08

    申请人: Henry Wang

    发明人: Henry Wang

    IPC分类号: B27B25/10 B27B27/10

    CPC分类号: B27B25/10 B27B27/10

    摘要: An apparatus (100), including: a push block (102) configured to push a workpiece across a table saw, the push block including: a first leg (120), a second leg (130) having a fence side (132) configured to abut a fence of the table saw, and a center leg (140) disposed between the first leg and the second leg. The first leg and the center leg define a first tunnel (152) therebetween, and the center leg and the second leg define a second tunnel (154) therebetween; a scale (160) configured to indicate a distance along the push block from the fence when the fence side of the second leg abuts the fence; and a cursor (162) configured to indicate on the scale safe cut-width settings for the table saw in which a saw blade will not contact the center leg when the fence side of the second leg abuts the fence.

    ROUTER BIT WITH INDEXING FEATURE
    53.
    发明申请

    公开(公告)号:US20220355396A1

    公开(公告)日:2022-11-10

    申请号:US17308744

    申请日:2021-05-05

    申请人: Henry Wang

    发明人: Henry Wang

    IPC分类号: B23C5/06 B23C3/12

    摘要: A router bit (100), including: a shank (104) that defines a longitudinal axis (106); a cutter (110); a body (112) that secures the cutter to the shank; and a recess (120) in the body that is disposed between axial ends (122, 124) of the cutter, and that includes an indexing feature (126).

    BLADE CLEANER
    54.
    发明申请

    公开(公告)号:US20220212302A1

    公开(公告)日:2022-07-07

    申请号:US17554875

    申请日:2021-12-17

    申请人: Henry Wang

    发明人: Henry Wang

    IPC分类号: B23Q11/02 B23D59/00 B26D7/08

    摘要: An apparatus (100), including: a base (102) configured to retain a liquid therein; an abrasive mat (200) configured to rest on a bottom of the base and to support a saw blade in a horizontal orientation; and a blade slot (612) configured to hold the saw blade in a vertical orientation.

    FIT FINDER TOOL
    55.
    发明申请

    公开(公告)号:US20210348908A1

    公开(公告)日:2021-11-11

    申请号:US17210268

    申请日:2021-03-23

    申请人: Henry Wang

    发明人: Henry Wang

    IPC分类号: G01B5/02

    摘要: An apparatus (100), including: a base reference contact (102) configured to correspond with a first point on a workpiece; a dimension contact (120) configured to move relative to the base reference contact along a dimension axis (124) and to correspond with a second point on a workpiece; and a pointer (162) operatively associated with the dimension contact such that movement of the dimension contact moves the pointer along the dimension axis an amount (X% D) that is proportional to and less than an amount (D) the dimension contact moves along the dimension axis.

    Metal oxide thin film transistor
    58.
    发明授权
    Metal oxide thin film transistor 有权
    金属氧化物薄膜晶体管

    公开(公告)号:US09142628B2

    公开(公告)日:2015-09-22

    申请号:US13591229

    申请日:2012-08-22

    CPC分类号: H01L29/41733 H01L29/7869

    摘要: A metal oxide thin film transistor (TFT) includes a gate electrode, a gate insulating layer, a metal oxide active layer, a source electrode, and a drain electrode. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate and covers the gate electrode. The metal oxide active layer is formed on the gate insulating layer. The drain electrode and the source electrode are formed on two opposite ends of the metal oxide active layer in a spaced-apart manner, in which at least one of the orthographic projection of the source electrode and the orthographic projection of the drain electrode on the substrate does not overlap the gate electrode.

    摘要翻译: 金属氧化物薄膜晶体管(TFT)包括栅电极,栅极绝缘层,金属氧化物有源层,源电极和漏电极。 栅电极形成在基板上。 栅极绝缘层形成在基板上并覆盖栅电极。 金属氧化物有源层形成在栅极绝缘层上。 漏极电极和源极电极以间隔方式形成在金属氧化物有源层的两个相对端上,其中源电极的正投影和漏电极的正投影至少一个在基板上 不与栅电极重叠。

    Color display and method for manufacturing color display
    59.
    发明授权
    Color display and method for manufacturing color display 有权
    彩色显示器和制造彩色显示的方法

    公开(公告)号:US08724208B2

    公开(公告)日:2014-05-13

    申请号:US13335400

    申请日:2011-12-22

    IPC分类号: G02F1/15

    摘要: A method for manufacturing a color display provides a bottom substrate, injects a liquid display media onto the bottom substrate, and disposes a sealing substrate on the liquid display media, such that the liquid display media is contained between the sealing substrate and the bottom substrate. The method also aligns an image device corresponding to the bottom substrate and transfers a color coating onto the sealing substrate by a laser device through a laser thermal transfer process to form a color filter layer on the sealing substrate.

    摘要翻译: 制造彩色显示器的方法提供底部基板,将液体显示介质注入到底部基板上,并将密封基板设置在液体显示介质上,使得液体显示介质容纳在密封基板和底部基板之间。 该方法还对准与底部基板对应的图像装置,并通过激光热转印工艺通过激光装置将彩色涂层转移到密封基板上,以在密封基板上形成滤色器层。

    Transistor structure
    60.
    发明授权
    Transistor structure 有权
    晶体管结构

    公开(公告)号:US08350260B2

    公开(公告)日:2013-01-08

    申请号:US13013828

    申请日:2011-01-26

    IPC分类号: H01L51/10

    摘要: A transistor structure comprises a patterned N-type transparent oxide semiconductor formed over a substrate as a base, and a patterned p-type organic polymer semiconductor formed on the patterned N-type transparent oxide semiconductor comprising a first portion and a second portion so that the patterned N-type transparent oxide semiconductor and the first portion and the second portion of the patterned p-type organic polymer semiconductor form heterojunctions therebetween respectively, wherein the first portion of the patterned p-type organic polymer semiconductor is used as an emitter, and the second portion of the patterned p-type organic polymer semiconductor is used as a collector.

    摘要翻译: 晶体管结构包括形成在作为基底的衬底上的图案化的N型透明氧化物半导体和形成在图案化的N型透明氧化物半导体上的图案化的p型有机聚合物半导体,其包括第一部分和第二部分, 图案化的N型透明氧化物半导体,并且图案化的p型有机聚合物半导体的第一部分和第二部分分别在其间形成异质结,其中图案化的p型有机聚合物半导体的第一部分用作发射极, 图案化p型有机聚合物半导体的第二部分用作集电体。