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公开(公告)号：US08687441B2
公开(公告)日：2014-04-01
申请号：US13085795
申请日：2011-04-13
Applicant: Chih-Hsuan Wang
Inventor： Chih-Hsuan Wang
IPC: G11C7/00
CPC classification number: G11C29/023 , G11C7/1072 , G11C11/4076 , G11C29/028
Abstract: A method for searching an optimum value of a memory includes the following steps. A first and a second phase delay values of the memory are sequentially set to a plurality of first values and a plurality of second values respectively. amounts of combinations of the first values combining with the second values passing a reading and writing test is recorded. A portion of the first values that the amounts of the corresponding combinations passing the reading and writing test is greater than a threshold is selected. A first value near a median of the selected first values is selected as a first optimum value for setting the first phase delay value. A portion of second values passing the reading and writing test is recorded. A second value near a median of the recording second values is selected as a second optimum value for setting the second phase delay value.
Abstract translation: 用于搜索存储器的最佳值的方法包括以下步骤。 存储器的第一和第二相位延迟值分别被顺序地设置为多个第一值和多个第二值。 记录与通过读写测试的第二值组合的第一值的组合量。 选择通过读取和写入测试的相应组合的量大于阈值的第一值的一部分。 选择所选择的第一值的中值附近的第一值作为用于设定第一相位延迟值的第一最佳值。 记录通过读写测试的第二值的一部分。 选择在记录第二值的中值附近的第二值作为用于设定第二相位延迟值的第二最佳值。
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公开(公告)号：US20130087781A1
公开(公告)日：2013-04-11
申请号：US13591229
申请日：2012-08-22
Applicant: Chia-Chun YEH , Henry WANG , Xue-Hung TSAI , Chih-Hsuan WANG
Inventor： Chia-Chun YEH , Henry WANG , Xue-Hung TSAI , Chih-Hsuan WANG
IPC: H01L29/786
CPC classification number: H01L29/41733 , H01L29/7869
Abstract: A metal oxide thin film transistor (TFT) includes a gate electrode, a gate insulating layer, a metal oxide active layer, a source electrode, and a drain electrode. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate and covers the gate electrode. The metal oxide active layer is formed on the gate insulating layer. The drain electrode and the source electrode are formed on two opposite ends of the metal oxide active layer in a spaced-apart manner, in which at least one of the orthographic projection of the source electrode and the orthographic projection of the drain to electrode on the substrate does not overlap the gate electrode.
Abstract translation: 金属氧化物薄膜晶体管（TFT）包括栅电极，栅极绝缘层，金属氧化物有源层，源电极和漏电极。 栅电极形成在基板上。 栅极绝缘层形成在基板上并覆盖栅电极。 金属氧化物有源层形成在栅极绝缘层上。 漏电极和源电极以间隔开的方式形成在金属氧化物有源层的两个相对端上，其中源电极的正投影和漏电极的正投影在至少一个 衬底不与栅电极重叠。
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3.发明申请公开(公告)号：US20120287772A1
公开(公告)日：2012-11-15
申请号：US13286221
申请日：2011-11-01
Applicant: Wei-Lun Wan , Hsien-Chang Liu , Shuo-Jen Hsu , Chia-Hsuan Chuang , Chih-Hsuan Wang , Juei-Ting Sun
Inventor： Wei-Lun Wan , Hsien-Chang Liu , Shuo-Jen Hsu , Chia-Hsuan Chuang , Chih-Hsuan Wang , Juei-Ting Sun
CPC classification number: H04L12/40 , H04L12/403 , H04W28/06 , H04W88/06
Abstract: A method for performing serial transport communication is provided, where the method is utilized for performing communication between a plurality of devices, each of which provides a user with a plurality of wireless communication functions respectively complying with different wireless communication standards. The method includes: with regard to a first wireless communication function of the plurality of wireless communication functions, utilizing a serial transport protocol to perform communication between the plurality of devices through a transport bus; and with regard to a second wireless communication function of the plurality of wireless communication functions, utilizing the serial transport protocol to perform communication between the plurality of devices through the transport bus. An associated device is also provided.
Abstract translation: 提供了一种用于执行串行传输通信的方法，其中该方法用于在多个设备之间执行通信，每个设备为用户提供分别符合不同无线通信标准的多个无线通信功能。 该方法包括：关于多个无线通信功能的第一无线通信功能，利用串行传输协议通过传输总线执行多个设备之间的通信; 并且关于多个无线通信功能的第二无线通信功能，利用串行传输协议通过传输总线执行多个设备之间的通信。 还提供了相关联的设备。
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公开(公告)号：US20110105025A1
公开(公告)日：2011-05-05
申请号：US12718223
申请日：2010-03-05
Applicant: CHIH HSUAN WANG , HAO SHENG HSU
Inventor： CHIH HSUAN WANG , HAO SHENG HSU
IPC: H04B7/00
CPC classification number: H04L1/0019 , H04L1/0003 , H04L1/0009 , H04L1/1825
Abstract: An adaptive tuning method comprises the steps of: obtaining a statistical result; determining whether an adaptive tuning procedure is to be performed in accordance with the statistical result; obtaining reference information of the first wireless module; and performing the adaptive tuning procedure in accordance with the reference information.
Abstract translation: 自适应调谐方法包括以下步骤：获得统计结果; 确定是否根据统计结果执行自适应调谐过程; 获得所述第一无线模块的参考信息; 以及根据参考信息执行自适应调谐过程。
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公开(公告)号：US09123691B2
公开(公告)日：2015-09-01
申请号：US13615640
申请日：2012-09-14
Applicant: Henry Wang , Chia-Chun Yeh , Xue-Hung Tsai , Chih-Hsuan Wang , Ted-Hong Shinn
Inventor： Henry Wang , Chia-Chun Yeh , Xue-Hung Tsai , Chih-Hsuan Wang , Ted-Hong Shinn
IPC: H01L29/417 , H01L29/10 , H01L29/786
CPC classification number: H01L29/41733 , H01L29/1037 , H01L29/7869
Abstract: Disclosed herein is a thin film transistor. The thin film transistor is characterized in having a source interconnect layer and a drain interconnect layer. The source electrode and the drain electrode are respectively disposed above and in contact with the source interconnect layer and the drain interconnect layer. The semiconductor layer is in contact with both the source interconnect layer and the drain interconnect layer, but is not in contact with the source electrode and the drain electrode.
Abstract translation: 这里公开了一种薄膜晶体管。 薄膜晶体管的特征在于具有源极互连层和漏极互连层。 源电极和漏极分别设置在源极互连层和漏极互连层的上方并与之接触。 半导体层与源极互连层和漏极互连层两者接触，但不与源极和漏极接触。
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Patent Agency Ranking
6.发明授权公开(公告)号：US08780934B2
公开(公告)日：2014-07-15
申请号：US13286221
申请日：2011-11-01
Applicant: Wei-Lun Wan , Hsien-Chang Liu , Shuo-Jen Hsu , Chia-Hsuan Chuang , Chih-Hsuan Wang , Juei-Ting Sun
Inventor： Wei-Lun Wan , Hsien-Chang Liu , Shuo-Jen Hsu , Chia-Hsuan Chuang , Chih-Hsuan Wang , Juei-Ting Sun
CPC classification number: H04L12/40 , H04L12/403 , H04W28/06 , H04W88/06
Abstract: A method for performing serial transport communication is provided, where the method is utilized for performing communication between a plurality of devices, each of which provides a user with a plurality of wireless communication functions respectively complying with different wireless communication standards. The method includes: with regard to a first wireless communication function of the plurality of wireless communication functions, utilizing a serial transport protocol to perform communication between the plurality of devices through a transport bus; and with regard to a second wireless communication function of the plurality of wireless communication functions, utilizing the serial transport protocol to perform communication between the plurality of devices through the transport bus. An associated device is also provided.
Abstract translation: 提供了一种用于执行串行传输通信的方法，其中该方法用于在多个设备之间执行通信，每个设备为用户提供分别符合不同无线通信标准的多个无线通信功能。 该方法包括：关于多个无线通信功能的第一无线通信功能，利用串行传输协议通过传输总线执行多个设备之间的通信; 并且关于多个无线通信功能的第二无线通信功能，利用串行传输协议通过传输总线执行多个设备之间的通信。 还提供了相关联的设备。
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公开(公告)号：US20120262997A1
公开(公告)日：2012-10-18
申请号：US13085795
申请日：2011-04-13
Applicant: CHIH-HSUAN WANG
Inventor： CHIH-HSUAN WANG
CPC classification number: G11C29/023 , G11C7/1072 , G11C11/4076 , G11C29/028
Abstract: A method for searching an optimum value of a memory includes the following steps. A first and a second phase delay values of the memory are sequentially set to a plurality of first values and a plurality of second values respectively amounts of combinations of the first values combining with the second values passing a reading and writing test is recorded. A portion of the first values that the amounts of the corresponding combinations passing the reading and writing test is greater than a threshold is selected. A first value near a median of the selected first values is selected as a first optimum value for setting the first phase delay value. A portion of second values passing the reading and writing test is recorded. A second value near a median of the recording second values is selected as a second optimum value for setting the second phase delay value.
Abstract translation: 用于搜索存储器的最佳值的方法包括以下步骤。 存储器的第一和第二相位延迟值被顺序地设置为多个第一值，并且多个第二值分别记录与通过读取和写入测试的第二值组合的第一值的组合量。 选择通过读取和写入测试的相应组合的量大于阈值的第一值的一部分。 选择所选择的第一值的中值附近的第一值作为用于设定第一相位延迟值的第一最佳值。 记录通过读写测试的第二值的一部分。 选择在记录第二值的中值附近的第二值作为用于设定第二相位延迟值的第二最佳值。
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公开(公告)号：US08983380B2
公开(公告)日：2015-03-17
申请号：US12718223
申请日：2010-03-05
Applicant: Chih Hsuan Wang , Hao Sheng Hsu
Inventor： Chih Hsuan Wang , Hao Sheng Hsu
CPC classification number: H04L1/0019 , H04L1/0003 , H04L1/0009 , H04L1/1825
Abstract: An adaptive tuning method comprises the steps of: obtaining a statistical result; determining whether an adaptive tuning procedure is to be performed in accordance with the statistical result; obtaining reference information of the first wireless module; and performing the adaptive tuning procedure in accordance with the reference information.
Abstract translation: 自适应调谐方法包括以下步骤：获得统计结果; 确定是否根据统计结果执行自适应调谐过程; 获得所述第一无线模块的参考信息; 以及根据参考信息执行自适应调谐过程。
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公开(公告)号：US09142628B2
公开(公告)日：2015-09-22
申请号：US13591229
申请日：2012-08-22
Applicant: Chia-Chun Yeh , Henry Wang , Xue-Hung Tsai , Chih-Hsuan Wang
Inventor： Chia-Chun Yeh , Henry Wang , Xue-Hung Tsai , Chih-Hsuan Wang
IPC: H01L29/49 , H01L29/417 , H01L29/786
CPC classification number: H01L29/41733 , H01L29/7869
Abstract: A metal oxide thin film transistor (TFT) includes a gate electrode, a gate insulating layer, a metal oxide active layer, a source electrode, and a drain electrode. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate and covers the gate electrode. The metal oxide active layer is formed on the gate insulating layer. The drain electrode and the source electrode are formed on two opposite ends of the metal oxide active layer in a spaced-apart manner, in which at least one of the orthographic projection of the source electrode and the orthographic projection of the drain electrode on the substrate does not overlap the gate electrode.
Abstract translation: 金属氧化物薄膜晶体管（TFT）包括栅电极，栅极绝缘层，金属氧化物有源层，源电极和漏电极。 栅电极形成在基板上。 栅极绝缘层形成在基板上并覆盖栅电极。 金属氧化物有源层形成在栅极绝缘层上。 漏极电极和源极电极以间隔方式形成在金属氧化物有源层的两个相对端上，其中源电极的正投影和漏电极的正投影至少一个在基板上 不与栅电极重叠。
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公开(公告)号：US20130187149A1
公开(公告)日：2013-07-25
申请号：US13615640
申请日：2012-09-14
Applicant: Henry WANG , Chia-Chun YEH , Xue-Hung TSAI , Chih-Hsuan WANG , Ted-Hong SHINN
Inventor： Henry WANG , Chia-Chun YEH , Xue-Hung TSAI , Chih-Hsuan WANG , Ted-Hong SHINN
IPC: H01L29/786 , H01L21/36
CPC classification number: H01L29/41733 , H01L29/1037 , H01L29/7869
Abstract: Disclosed herein is a thin film transistor. The thin film transistor is characterized in having a source interconnect layer and a drain interconnect layer. The source electrode and the drain electrode are respectively disposed above and in contact with the source interconnect layer and the drain interconnect layer. The semiconductor layer is in contact with both the source interconnect layer and the drain interconnect layer, but is not in contact with the source electrode and the drain electrode.
Abstract translation: 这里公开了一种薄膜晶体管。 薄膜晶体管的特征在于具有源极互连层和漏极互连层。 源电极和漏极分别设置在源极互连层和漏极互连层的上方并与之接触。 半导体层与源极互连层和漏极互连层两者接触，但不与源极和漏极接触。
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