公开(公告)号：US20130187057A1

公开(公告)日：2013-07-25

申请号：US13744863

申请日：2013-01-18

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Hiroshi KOBAYASHI ,  Motohiro SUYAMA ,  Masahiro KOTANI ,  Takayuki OHMURA

IPC: G01T1/28

CPC classification number: G01T1/28

Abstract: An ion detector 1A for detecting positive ions is provided with a chamber 2 having an ion entrance 3 which allows positive ions to enter, a conversion dynode 9 which is disposed in the chamber 2 and to which a negative potential is applied, and an avalanche photodiode 30 that is disposed in the chamber 2 and has an electron incident surface 30a which is opposed to the conversion dynode 9 and also into which secondary electrons emitted from the conversion dynode 9 are made incident. The electron incident surface 30a is located closer to the conversion dynode 9 than a positioning part 14 which supports the avalanche photodiode 30 in the grounded chamber 2.

Abstract translation: 用于检测正离子的离子检测器1A设置有具有允许正离子进入的离子入口3的室2，设置在室2中并且施加负电位的转换倍增极9和雪崩光电二极管 30，其设置在室2中，并且具有与转换倍增极9相对的电子入射表面30a，并且入射从转换倍增极9发射的二次电子。 电子入射表面30a比在接地室2中支撑雪崩光电二极管30的定位部分14更靠近转换倍增极9。