FLASH MEMORY USING FRINGING EFFECTS AND ELECTROSTATIC SHIELDING
    51.
    发明申请
    FLASH MEMORY USING FRINGING EFFECTS AND ELECTROSTATIC SHIELDING 有权
    闪光效应和静电屏蔽

    公开(公告)号:US20130256782A1

    公开(公告)日:2013-10-03

    申请号:US13992298

    申请日:2011-12-05

    IPC分类号: H01L29/792

    摘要: Disclosed is a flash memory using fringing effects and an electrostatic shielding function. A gap between adjacent gate stacks is controlled by fringing effects, and an operation of each of the gate stacks is electrostatically shielded by a gate electrode extending to a tunneling insulation layer. Thus, coupling between the adjacent gate stacks is minimized by electrostatic shielding.

    摘要翻译: 公开了一种使用边缘效应和静电屏蔽功能的闪存。 相邻栅极堆叠之间的间隙由边缘效应控制,并且每个栅极堆叠的操作被延伸到隧道绝缘层的栅电极静电屏蔽。 因此,通过静电屏蔽使相邻栅极叠层之间的耦合最小化。

    Repair circuit and control method thereof
    52.
    发明授权
    Repair circuit and control method thereof 失效
    修理电路及其控制方法

    公开(公告)号:US08547762B2

    公开(公告)日:2013-10-01

    申请号:US13190046

    申请日:2011-07-25

    申请人: Sung Ho Kim

    发明人: Sung Ho Kim

    IPC分类号: G11C7/00

    CPC分类号: G11C17/14 G11C29/787

    摘要: A semiconductor memory apparatus including a repair circuit may comprise: a fuse set block configured to store a repair address, compare the repair address with an input address, and generate a primary repair signal; and a redundancy control block configured to receive the primary repair signal, determine whether a repair cell in a repair memory designated by the primary repair signal is failed or not, and generate a secondary repair signal which repair the failed repair cell with another repair cell in the repair memory.

    摘要翻译: 包括修复电路的半导体存储装置可以包括:熔丝组块,被配置为存储修复地址,将修复地址与输入地址进行比较,并生成主修复信号; 以及冗余控制块,被配置为接收所述主修复信号,确定由所述主修复信号指定的修复存储器中的修复单元是否故障,并且生成辅助修复信号,所述修复信号用另一修复单元修复所述故障修复单元 修复记忆。