公开(公告)号：US5905276A

公开(公告)日：1999-05-18

申请号：US968896

申请日：1997-11-06

申请人： Katsuhide Manabe ,  Masahiro Kotaki ,  Hisaki Kato ,  Michinari Sassa ,  Isamu Akasaki ,  Hiroshi Amano

发明人： Katsuhide Manabe ,  Masahiro Kotaki ,  Hisaki Kato ,  Michinari Sassa ,  Isamu Akasaki ,  Hiroshi Amano

IPC分类号： H01L33/08 ,  H01L33/12 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/325

摘要： Disclosed is a light-emitting semiconductor device which comprises an N-layer of N-type nitrogen-Group III compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0, a P-layer of P-type nitrogen-Group III compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0 and a Zn doped semi-insulating I-layer of nitrogen-Group III compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0. The semi-insulating I-layer has a 20 to 3000 .ANG. thickness and can emit light in the range of 485 to 490 nm. By employing the I-layer, the light-emitting diode as a whole can emit light in the range of 450 to 480 nm.

摘要翻译： 公开了一种发光半导体器件，其包括满足式Al x Ga y In 1-x-y N的N型N型氮 - III族化合物半导体的N层，包括x = 0，y = 0和x = y = 0，a 满足公式Al x Ga y In 1-x-y N的P型氮 - III族化合物半导体的P层，包括x = 0，y = 0和x = y = 0，以及Zn掺杂的半绝缘I层， 满足公式Al x Ga y In 1-x-y N的III族化合物半导体，包括x = 0，y = 0和x = y = 0。 半绝缘I层的厚度为20至3000，可以发射485至490nm的光。 通过采用I层，发光二极管整体可发射450〜480nm的光。