公开(公告)号：US20050018525A1

公开(公告)日：2005-01-27

申请号：US10625277

申请日：2003-07-23

申请人： Dong-Sauk Kim ,  Ho-Seok Lee ,  Byung-Jun Park ,  Il-Young Kwon ,  Jong-Min Lee ,  Hyeong-Soo Kim ,  Jin-Woong Kim ,  Hyung-Bok Choi ,  Dong-Woo Shin

发明人： Dong-Sauk Kim ,  Ho-Seok Lee ,  Byung-Jun Park ,  Il-Young Kwon ,  Jong-Min Lee ,  Hyeong-Soo Kim ,  Jin-Woong Kim ,  Hyung-Bok Choi ,  Dong-Woo Shin

IPC分类号： H01L21/8242 ,  G11C8/02 ,  H01L21/82 ,  H01L27/02 ,  H01L27/10 ,  H01L27/108

CPC分类号： H01L27/10855 ,  H01L27/0207 ,  H01L27/10814

摘要： Semiconductor devices and methods of manufacture thereof are disclosed that are capable of preventing a short of lower electrodes caused by a leaning or lifting phenomenon while forming the lower electrodes and securing enough capacitance of a capacitor by widening an effective capacitor area. The inventive semiconductor device includes: a plurality of capacitor plugs disposed in an orderly separation distance; and a plurality of lower electrodes used for a capacitor and disposed in an orderly separation distance to be respectively connected with the capacitor plugs.

摘要翻译： 公开了半导体装置及其制造方法，其能够通过扩大有效的电容器面积来形成下部电极并且通过扩大电容器的足够的电容来防止由倾斜或提升现象引起的较短的下部电极。 本发明的半导体器件包括：以有序的间隔距离设置的多个电容器插头; 以及多个用于电容器的下电极，并且以与电容器插头分别连接的有序分隔距离设置。