公开(公告)号：US20160356864A1

公开(公告)日：2016-12-08

申请号：US15241632

申请日：2016-08-19

Applicant: Infineon Technologies AG

Inventor： Juergen Zimmer

IPC: G01R33/09 ,  G01R33/00

CPC classification number: G01R33/096 ,  B82Y25/00 ,  G01B7/30 ,  G01D5/145 ,  G01R33/0052 ,  G01R33/09 ,  G01R33/091 ,  G01R33/093 ,  G01R33/098 ,  H01L43/08 ,  Y10T29/49002 ,  Y10T29/49117

Abstract: Embodiments relate to xMR sensors, sensor elements and structures, and methods. In an embodiment, a sensor element comprises a non-elongated xMR structure; and a plurality of contact regions formed on the xMR structure spaced apart from one another such that a non-homogeneous current direction and current density distribution are induced in the xMR structure when a voltage is applied between the plurality of contact regions.

Abstract translation: 实施例涉及xMR传感器，传感器元件和结构以及方法。 在一个实施例中，传感器元件包括非细长xMR结构; 以及形成在xMR结构上彼此间隔开的多个接触区域，使得当在多个接触区域之间施加电压时，在xMR结构中感应出非均匀的电流方向和电流密度分布。

公开(公告)号：US20160266217A1

公开(公告)日：2016-09-15

申请号：US15160244

申请日：2016-05-20

Applicant: Infineon Technologies AG

Inventor： Juergen Zimmer ,  Wolfgang Raberg

IPC: G01R33/09

CPC classification number: G01R33/091 ,  G01R33/098

Abstract: Embodiments relate to xMR sensors, including giant magnetoresistive (GMR), tunneling magnetoresistive (TMR) or anisotropic magnetoresistive (AMR), and the configuration of xMR strips within xMR sensors. In an embodiment, an xMR strip includes a plurality of differently sized and/or differently oriented serially connected portions. In another embodiment, an xMR strip includes a varying width or other characteristic. Such configurations can address discontinuities associated with conventional xMR sensors and improve xMR sensor performance.

Abstract translation: 实施例涉及包括巨磁阻（GMR），隧道磁阻（TMR）或各向异性磁阻（AMR）的xMR传感器以及xMR传感器内的xMR条的配置。 在一个实施例中，xMR条包括多个不同尺寸和/或不同取向的串联连接部分。 在另一个实施例中，xMR条带包括变化的宽度或其它特征。 这种配置可以解决与常规xMR传感器相关的不连续性，并改善xMR传感器性能。

公开(公告)号：US20150185297A1

公开(公告)日：2015-07-02

申请号：US14141660

申请日：2013-12-27

Applicant: Infineon Technologies AG

Inventor： Juergen Zimmer ,  Armin Satz ,  Wolfgang Raberg ,  Hubert Brueckl ,  Dieter Suess

IPC: G01R33/09

CPC classification number: G01R33/093 ,  G01R33/095 ,  G01R33/096 ,  G01R33/098

Abstract: A device according to an embodiment may comprise a magneto-resistive structure comprising a magnetic free layer with a spontaneously generated in-plane closed flux magnetization pattern and a magnetic reference layer having a non-closed flux magnetization pattern.

Abstract translation: 根据实施例的装置可以包括磁阻结构，其包括具有自发生成的平面内磁通磁化模式的磁性自由层和具有非闭合磁通磁化模式的磁性参考层。

公开(公告)号：US20150108972A1

公开(公告)日：2015-04-23

申请号：US14057214

申请日：2013-10-18

Applicant: Infineon Technologies AG

Inventor： Juergen Zimmer ,  Harald Witschnig

IPC: G01R33/09 ,  H01L43/12

CPC classification number: G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3948 ,  G11B5/3961 ,  H01L27/22 ,  H01L43/12

Abstract: Embodiments relate to a sensor device including a layer stack 600, the layer stack 600 including at least ferromagnetic and non-magnetic layers formed on a common substrate 620. The sensor device 600 further includes at least a first magneto-resistive sensor element 711 provided by a first section 611 of the layer stack 600. The first magneto-resistive sensor element 711 herein is configured to generate a first signal. The sensor device 600 also includes a second magneto-resistive sensor element 712 provided by a second section 612 of the layer stack 610. The second magneto-resistive sensor element 712 herein is configured to generate a second signal for verifying the first signal.

Abstract translation: 实施例涉及包括层堆叠600的传感器设备，层堆叠600至少包括形成在公共衬底620上的铁磁和非磁性层。传感器设备600还包括至少第一磁阻传感器元件711，其由 层堆叠600的第一部分611.这里的第一磁阻传感器元件711被配置为产生第一信号。 传感器装置600还包括由层堆610的第二部分612提供的第二磁阻传感器元件712.此处的第二磁阻传感器元件712被配置为产生用于验证第一信号的第二信号。

公开(公告)号：US20140197827A1

公开(公告)日：2014-07-17

申请号：US13741693

申请日：2013-01-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Juergen Zimmer

IPC: G01R33/09 ,  H05K3/30

CPC classification number: G01R33/09 ,  G01R33/0052 ,  H05K3/30 ,  Y10T29/4913

Abstract: An XMR-sensor and method for manufacturing the XMR-Sensor are provided. The XMR-sensor includes a substrate, a first contact, a second contact and an XMR-structure. The substrate includes a first main surface area and a second main surface area. The first contact is arranged at the first main surface area and the second contact is arranged at the second main surface area. The XMR-structure extends from the first contact to the second contact such that an XMR-plane of the XMR-structure is arranged along a first direction perpendicular to the first main surface area or the second main surface area.

Abstract translation: 提供了一种用于制造XMR传感器的XMR传感器和方法。 XMR传感器包括基板，第一触点，第二触点和XMR结构。 基板包括第一主表面区域和第二主表面区域。 第一触点设置在第一主表面区域，第二触点设置在第二主表面区域。 XMR结构从第一接触延伸到第二接触，使得XMR结构的XMR平面沿着垂直于第一主表面区域或第二主表面区域的第一方向排列。