公开(公告)号：US20140291493A1

公开(公告)日：2014-10-02

申请号：US14198175

申请日：2014-03-05

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  David L. Brown ,  John Fielden

IPC: H01L31/11 ,  H01L31/167

CPC classification number: H01J40/06 ,  H01J43/08 ,  H01L31/02161 ,  H01L31/103

Abstract: A photomultiplier tube includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. A gap between the semiconductor photocathode and the photodiode may be less than about 1 mm or less than about 500 μm. The semiconductor photocathode may include gallium nitride, e.g. one or more p-doped gallium nitride layers. In other embodiments, the semiconductor photocathode may include silicon. This semiconductor photocathode can further include a pure boron coating on at least one surface.

Abstract translation: 光电倍增管包括半导体光电阴极和光电二极管。 值得注意的是，光电二极管包括p掺杂半导体层，形成在p掺杂半导体层的第一表面上以形成二极管的n掺杂半导体层，以及形成在p掺杂半导体层的第二表面上的纯硼层 半导体层。 半导体光电阴极和光电二极管之间的间隙可以小于约1mm或小于约500μm。 半导体光电阴极可以包括例如氮化镓。 一个或多个p掺杂氮化镓层。 在其他实施例中，半导体光电阴极可以包括硅。 该半导体光电阴极还可以在至少一个表面上包括纯硼涂层。

公开(公告)号：US20140198818A1

公开(公告)日：2014-07-17

申请号：US14213835

申请日：2014-03-14

Applicant: KLA-Tencor Corporation

Inventor： Vladimir Dribinski ,  Yung-Ho Chuang

IPC: H01S3/091

CPC classification number: H01S3/10 ,  G02F1/3525 ,  H01S3/005 ,  H01S3/091

Abstract: Laser-induced damage in an optical material can be mitigated by creating conditions at which light absorption is minimized. Specifically, electrons populating defect energy levels of a band gap in an optical material can be promoted to the conduction band—a process commonly referred to as bleaching. Such bleaching can be accomplished using a predetermined wavelength that ensures minimum energy deposition into the material, ideally promoting electron to just inside the conduction band. In some cases phonon (i.e. thermal) excitation can also be used to achieve higher depopulation rates. In one embodiment, a bleaching light beam having a wavelength longer than that of the laser beam can be combined with the laser beam to depopulate the defect energy levels in the band gap. The bleaching light beam can be propagated in the same direction or intersect the laser beam.

Abstract translation: 可以通过产生光吸收最小化的条件来减轻光学材料中的激光诱导的损伤。 具体地说，填充光学材料中的带隙的缺陷能级的电子能够促进通常被称为漂白的传导带。 这样的漂白可以使用确保最小能量沉积到材料中的预定波长来实现，理想地促进电子刚好在导带内部。 在某些情况下，也可以使用声子（即热）激发来实现更高的人口流动率。 在一个实施例中，具有比激光束长的波长的波长的漂白光束可以与激光束组合以对带隙中的缺陷能级进行衰减。 漂白光束可以沿相同方向传播或与激光束相交。