Abstract:
In a photoelectric conversion device, the potential control unit controls electric potentials applied to the meta-surface. The meta-surface includes a plurality of patterns which are space away from each other. The plurality of patterns include an antenna portion and at least one bias portion. The antenna portion extends in a predetermined direction and emits the electron in response to incidence of the electromagnetic wave. The potential control unit switches a first state and a second state by controlling the electric potentials applied to the plurality of patterns. In the first state, a component of an electric field from the bias portion toward the antenna portion in a predetermined direction is positive. In the second state, a component of an electric field from the bias portion toward the antenna portion in the predetermined direction is negative.
Abstract:
A photoelectric tube includes a housing including a light transmitting portion, an electron emitting portion held by a recess provided in the housing, the electron emitting portion including a concave photoelectric surface facing a light transmitting portion side inside the housing, and an electron capturing portion disposed between the light transmitting portion and the photoelectric surface inside the housing. At least a part of the electron capturing portion is located inside a region on an inside of the photoelectric surface.
Abstract:
A photonic electron emission device includes an emitter, a photonic energy conduit evanescently coupled to the emitter, and an anode. The emitter includes a component selected from the group consisting of a metal, a semimetal, a semiconductor having a bandgap that is less than about 3.5 eV. The anode is positively biased with respect to the emitter, the anode directing electrons emitted from the emitter.
Abstract:
A phototube suitable for detecting a photon, comprising: an electron ejector configured for emitting electrons in response to an incident photon; a detector configured for collecting the electrons and providing an output signal representative of the incident photon; an electrode configured for applying a voltage to drive the electrons to the detector; and one or more sidewalls forming an envelope of a hole between the electrode and the detector, wherein the electron ejector is inside the hole and bonded to the electrode.
Abstract:
A transmission mode photocathode comprises: an optically transparent substrate having an outside face to which light is incident, and an inside face from which the light incident to the outside face side is output; a photoelectric conversion layer disposed on the inside face side of the optically transparent substrate and configured to convert the light output from the inside face into a photoelectron or photoelectrons; and an optically-transparent electroconductive layer comprising graphene, and disposed between the optically transparent substrate and the photoelectric conversion layer.
Abstract:
A system for inspecting a sample including a detector, either a photomultiplier tube or an electron-bombarded image sensor, that is positioned to receive light from the sample. The detector includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. The semiconductor photocathode includes silicon, and further includes a pure boron coating on at least one surface.
Abstract:
Apparatuses and methods are provided for converting solar energy. The apparatus can include an emitter electrode, a collector electrode, a vacuum gap, and an electronic circuit. The emitter electrode can include a first light absorbing layer in direct contact with a first low work function layer. The vacuum gap can be disposed between the emitter and the collector. The vacuum gap can be in direct contact with the first low function layer. The electronic circuit can be coupled to the emitter electrode and the collector electrode. The first low work function layer can be disposed at least partially between the first light absorbing layer and the vacuum gap.
Abstract:
The object is to provide a photoelectric surface member which allows higher quantum efficiency. In order to achieve this object, a photoelectric surface member 1a is a crystalline layer formed by a nitride type semiconductor material, and comprises a nitride semiconductor crystal layer 10 where the direction from the first surface 101 to the second surface 102 is the negative c polar direction of the crystal, an adhesive layer 12 formed along the first surface 101 of the nitride semiconductor crystal layer 10, and a glass substrate 14 which is adhesively fixed to the adhesive layer 12 such that the adhesive layer 12 is located between the glass substrate 14 and the nitride semiconductor crystal layer 10.
Abstract:
An electron tube of the present invention includes: a vacuum vessel including a face plate portion and a stem portion arranged facing the face plate portion; a photocathode arranged in the vacuum vessel and formed on the face plate portion; a projection portion arranged in the vacuum vessel, extending from the stem portion toward the face plate portion, and made of an insulating material; an electron detector arranged on the projection portion, made of a semiconductor, and having a first conductivity-type region and a second conductivity-type region; and a first conductive film covering a surface of the projection portion and to be electrically connected to the first conductivity-type region.
Abstract:
The object is to provide a photoelectric surface member which allows higher quantum efficiency. In order to achieve this object, a photoelectric surface member 1a is a crystalline layer formed by a nitride type semiconductor material, and comprises a nitride semiconductor crystal layer 10 where the direction from the first surface 101 to the second surface 102 is the negative c polar direction of the crystal, an adhesive layer 12 formed along the first surface 101 of the nitride semiconductor crystal layer 10, and a glass substrate 14 which is adhesively fixed to the adhesive layer 12 such that the adhesive layer 12 is located between the glass substrate 14 and the nitride semiconductor crystal layer 10.