公开(公告)号：US5491712A

公开(公告)日：1996-02-13

申请号：US332231

申请日：1994-10-31

Applicant: Hong Lin ,  Long Yang ,  Michael R. T. Tan ,  Shih-Yuan Wang

Inventor： Hong Lin ,  Long Yang ,  Michael R. T. Tan ,  Shih-Yuan Wang

IPC: H01S5/026 ,  H01S5/183 ,  H01S5/20 ,  H01S3/18

CPC classification number: H01S5/0264 ,  H01S5/0207 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/2027 ,  H01S5/2063

Abstract: The present invention provides a structure and method for integrating a photodiode and surface emitting laser on a substrate which minimizes both process complexity and exposure of epitaxial layers. In a first embodiment, a photodiode structure is integrated with the surface emitting laser simply by adding a separate Schottky contact to the surface of the SEL. In a second embodiment, a photodiode structure is integrated with the surface emitting laser by positioning a current isolation region between the photodiode and the SEL. The current isolation region should extend into a first mirror region but not into the light generation region of the active region so that the light generation region of the SEL is optically coupled to the light absorption region of the photodiode.

Abstract translation: 本发明提供了一种用于将光电二极管和表面发射激光器集成在衬底上的结构和方法，其使工艺复杂性和外延层的曝光都最小化。 在第一实施例中，光电二极管结构仅通过向SEL的表面添加单独的肖特基接触而与表面发射激光器集成。 在第二实施例中，通过将光电二极管和SEL之间的电流隔离区域定位，光电二极管结构与表面发射激光器集成。 电流隔离区域应延伸到第一反射镜区域而不延伸到有源区域的光产生区域中，使得SEL的光产生区域光耦合到光电二极管的光吸收区域。