摘要:
An apparatus and associated method are generally directed to a magnetic shield capable of screening magnetic flux with in-plane anisotropy. Various embodiments of the present invention may have at least one magnetic shield. The shield may be constructed of a Cobalt-Iridium compound capable of providing in-plane anisotropy along a longitudinal plane of the shield.
摘要:
A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals.
摘要:
An apparatus and associated method are generally directed to a magnetic shield capable of screening magnetic flux with in-plane anisotropy. Various embodiments of the present invention may have at least one magnetic shield. The shield may be constructed of a Cobalt-Iridium compound capable of providing in-plane anisotropy along a longitudinal plane of the shield.
摘要:
A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals.
摘要:
A compact magnetic recording head is provided. The recording head includes a write pole and a substantially planar yoke, which is coupled to the write pole. The yoke is configured to support a substantially single vortex configuration of magnetization.
摘要:
A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals.
摘要:
A method for synchronizing writing to a bit patterned media includes: reading bits from skipped blocks on the bit patterned media, using timing of bits read from the skipped blocks to update a write clock, and writing request data to physical blocks on the bit patterned media, interleaved with the skipped blocks. An apparatus that operates in accordance with the method is also provided.
摘要:
An apparatus comprises a ring of magnetic material, a source for applying a setting magnetic field to the ring, and first and second electrodes for applying an electric current to the ring. A method of using the apparatus to write to a magnetic storage medium is also provided.
摘要:
A magnetic device includes a write element having a write element tip that defines a medium confronting surface. The write element is operable to generate a first field at the medium confronting surface. A conductor is proximate the write element tip and first and second conductive leads are connected to the conductor and configured to deliver a current to the conductor to generate a second field that augments the first field. First and second side elements are disposed on opposite sides of the write element tip in a cross-track direction at the medium confronting surface. At least a portion of the first conductive lead is disposed adjacent the first side element on a side opposite the medium confronting surface, and at least a portion of the second conductive lead is disposed adjacent the second side element on a side opposite the medium confronting surface.
摘要:
An apparatus comprises a write pole, a return pole, a wire positioned between the write pole and the return pole, a first free layer, and a first interlayer positioned between the write pole and the first free layer.