公开(公告)号：US09083899B2

公开(公告)日：2015-07-14

申请号：US13773437

申请日：2013-02-21

Applicant: OmniVision Technologies, Inc.

Inventor： Duli Mao ,  Vincent Venezia ,  Gang Chen ,  Hsin-Chih Tai ,  Howard E. Rhodes

IPC: H01L27/00 ,  H01J40/14 ,  H03G3/20 ,  H04N5/355 ,  H01L27/146 ,  H04N5/52

CPC classification number: H04N5/3559 ,  H01L27/14601 ,  H04N5/355 ,  H04N5/52

Abstract: Techniques and mechanisms for a pixel array to provide a level of conversion gain. In an embodiment, the pixel array includes conversion gain control circuitry to be selectively configured at different times for different operational modes, each mode for implementing a respective conversion gain. The conversion gain control circuitry selectively provides switched coupling of the pixel cell to—and/or switched decoupling of the pixel cell from—a supply voltage. In another embodiment, the conversion gain control circuitry selectively provides switched coupling of the pixel cell to—and/or switched decoupling of the pixel cell from—sample and hold circuitry.

Abstract translation: 像素阵列的技术和机制提供一个转换增益水平。 在一个实施例中，像素阵列包括转换增益控制电路，以在不同的时间针对不同的操作模式进行选择性地配置，每个模式用于实现相应的转换增益。 转换增益控制电路选择性地提供像素单元与像素单元与电源电压的 - 和/或开关去耦合的切换耦合。 在另一个实施例中，转换增益控制电路选择性地提供像素单元与采样和保持电路的 - 和/或开关去耦合的切换耦合。

公开(公告)号：US08816462B2

公开(公告)日：2014-08-26

申请号：US13660774

申请日：2012-10-25

Applicant: OmniVision Technologies, Inc.

Inventor： Howard E. Rhodes ,  Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Vincent Venezia

IPC: H01L27/146

CPC classification number: H01L31/0224 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14643 ,  H01L31/103

Abstract: An image sensor pixel includes a photodiode region having a first polarity doping type disposed in a semiconductor layer. A pinning surface layer having a second polarity doping type is disposed over the photodiode region in the semiconductor layer. The second polarity is opposite from the first polarity. A first polarity charge layer is disposed proximate to the pinning surface layer over the photodiode region. An contact etch stop layer is disposed over the photodiode region proximate to the first polarity charge layer. The first polarity charge layer is disposed between the pinning surface layer and the contact etch stop layer such that first polarity charge layer cancels out charge having a second polarity that is induced in the contact etch stop layer. A passivation layer is also disposed over the photodiode region between the pinning surface layer and the contact etch stop layer.

Abstract translation: 图像传感器像素包括设置在半导体层中的具有第一极性掺杂型的光电二极管区域。 具有第二极性掺杂型的钉扎表面层设置在半导体层中的光电二极管区域的上方。 第二极性与第一极性相反。 第一极性电荷层设置在光电二极管区域附近的钉扎表面层附近。 接触蚀刻停止层设置在靠近第一极性电荷层的光电二极管区域的上方。 第一极性电荷层设置在钉扎表面层和接触蚀刻停止层之间，使得第一极性电荷层抵消在接触蚀刻停止层中感应的具有第二极性的电荷。 钝化层也设置在钉扎表面层和接触蚀刻停止层之间的光电二极管区域之上。

公开(公告)号：US08466010B2

公开(公告)日：2013-06-18

申请号：US13735787

申请日：2013-01-07

Applicant: Omnivision Technologies, Inc.

Inventor： Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Duli Mao ,  Keh-Chiang Ku

IPC: H01L23/04

CPC classification number: H01L27/14643 ,  H01L27/14636 ,  H01L27/1464

Abstract: A backside illuminated imaging sensor with a seal ring support includes an epitaxial layer having an imaging array formed in a front side of the epitaxial layer. A metal stack is coupled to the front side of the epitaxial layer, wherein the metal stack includes a seal ring formed in an edge region of the imaging sensor. An opening is included that extends from the back side of the epitaxial layer to a metal pad of the seal ring to expose the metal pad. The seal ring support is disposed on the metal pad and within the opening to structurally support the seal ring.