摘要:
The invention concerns a microlithography projection objective and a microlithographic projection exposure apparatus with a microlithography projection objective, having at least one lens of birefringent material. In accordance with an aspect of the invention, a microlithography projection objective has an optical axis and at least one lens of uniaxial birefringent crystal whose principal axis is oriented parallel to the optical axis, wherein all lenses of uniaxial birefringent crystal comprise the same crystal material, wherein light is tangentially polarised in the lens of uniaxial birefringent crystal and wherein the lens of uniaxial birefringent crystal has a diffractive power different from zero and has a plane exit face or a non-plane but refractive power-less exit face.
摘要:
A projection objective includes a first lens group (G1) of positive refractive power, a second lens group (G2) of negative refractive power and at least one further lens group of positive refractive power in which a diaphragm is mounted. The first lens group (G1) includes exclusively lenses of positive refractive power. The number of lenses of positive refractive power (L101 to L103; L201, L202) of the first lens group (G1) is less than the number of lenses of positive refractive power (L116 to L119; L215 to L217) which are mounted forward of the diaphragm of the further lens group (G5).
摘要翻译:投影物镜包括正折射光焦度的第一透镜组(G 1),负折射光焦度的第二透镜组(G 2)和安装有光阑的至少一个正屈光力透镜组。 第一透镜组(G 1)仅包括具有正屈光力的透镜。 第一透镜组(G 1)的正屈光力量的透镜数(L 101〜L 103; L 201,L 202)的数量小于正折射力透镜的数量(L 116〜L 119; L 215 至L 217),其安装在另一透镜组(G 5)的隔膜的前方。
摘要:
In certain aspects, the disclosure relates to an imaging system, particularly an objective or an illumination device of a microlithography projection-exposure apparatus having an optical axis (OA), with at least one optical element of an optically uniaxial crystal material whose optical crystallographic axis is substantially parallel to the optical axis (OA) of the imaging system and which at a working wavelength has an ordinary refractive index no and an extraordinary refractive index ne, with the extraordinary refractive index ne being smaller than the ordinary refractive index no; wherein the optical element is arranged in the ray path pattern in such a way that, at least for rays of the working wavelength which meet the optical element at an angle that falls within an angular range from the optical axis, the p-polarized component is reflected more strongly than the s-polarized component.
摘要:
A projection objective includes a first lens group (G1) of positive refractive power, a second lens group (G2) of negative refractive power and at least one further lens group of positive refractive power in which a diaphragm is mounted. The first lens group (G1) includes exclusively lenses of positive refractive power. The number of lenses of positive refractive power (L101 to L103; L201, L202) of the first lens group (G1) is less than the number of lenses of positive refractive power (L116 to L119; L215 to L217) which are mounted forward of the diaphragm of the further lens group (G5).
摘要翻译:投影物镜包括正折射光焦度的第一透镜组(G 1),负折射光焦度的第二透镜组(G 2)和安装有光阑的至少一个正屈光力透镜组。 第一透镜组(G 1)仅包括具有正屈光力的透镜。 第一透镜组(G 1)的正屈光力量的透镜数(L 101〜L 103; L 201,L 202)的数量小于正折射力透镜的数量(L 116〜L 119; L 215 至L 217),其安装在另一透镜组(G 5)的隔膜的前方。
摘要:
A projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective suitable for microlithography projection exposure machines has a plurality of optical elements transparent for radiation at an operating wavelength of the projection objective. At least one optical element is a high-index optical element made from a high-index material with a refractive index n≧1.6 at the operating wavelength.
摘要:
An arrangement for microlithographic projection exposure at high aperture achieve a contrast increase by the polarization of the light perpendicular to the plane of incidence on the resist. Arrangements are provided which influence the tangential polarization or the linear polarization adapted to the dipole illumination in the illuminating system and in the reduction objective.
摘要:
A very-high aperture, purely refractive projection objective is designed as a two-belly system with an object-side belly, an image-side belly and a waist (7) situated therebetween. The system diaphragm (5) is seated in the image-side belly at a spacing in front of the image plane. Arranged between the waist and the system diaphragm in the region of divergent radiation is a negative group (LG5) which has an effective curvature with a concave side pointing towards the image plane. The system is distinguished by a high numerical aperture, low chromatic aberrations and compact, material-saving design.
摘要:
A refractive projection objective for use in microlithography with lenses made exclusively of one and the same material has an image-side numerical aperture larger than 0.7. A light bundle defined by the image-side numerical aperture and by the image field has within the objective a variable light-bundle diameter smaller than or equal to a maximum light-bundle diameter. In a length interval measured on the optical axis from the system diaphragm towards the object field and at least equaling the maximum light-bundle diameter, the variable light-bundle diameter exceeds 85% of the maximum light-bundle diameter.
摘要:
A method and an arrangement for microlithographic projection exposure at high aperture achieve a contrast increase by the polarization of the light perpendicular to the plane of incidence on the resist. Arrangements are provided which influence the tangential polarization or the linear polarization adapted to the dipole illumination in the illuminating system and in the reduction objective.