摘要:
A measuring apparatus for optical, for example interferometric, measurement of an optical imaging system, imaging of a useful pattern in an imaging operation, including a device for production of radiation information, for example interference information, which is indicative of imaging errors, having a mask structure arrangement which contains a measurement pattern, and a device for detection and evaluation of the interference information which is indicative of imaging errors; also a method for operation of the optical imaging system including imaging error correction. The apparatus further includes a heating irradiation arrangement for radiation heating of the optical imaging system during measurement operation such that the heating effect of the radiation which is applied to the optical imaging system to be measured equals, within a tolerance range which can be predetermined, the heating effect of the radiation which is passed through the useful pattern during imaging operation of the optical imaging system.
摘要:
A method and an apparatus for determining the influencing of the state of polarization of optical radiation by an optical system under test, wherein radiation with a defined entrance state of polarization is directed onto the optical system, the exit-side state of polarization is measured, and the influencing of the state of polarization is determined by the optical system with the aid of evaluation of the exit state of polarization with reference to the entrance state of polarization. An analyser arrangement which can be used for this purpose is also disclosed. The method and the apparatus are used, e.g., to determine the influencing of the state of polarization of optical radiation by an optical imaging system of prescribable aperture, the determination being performed in a pupil-resolved fashion.
摘要:
A method and an arrangement for microlithographic projection exposure at high aperture achieve a contrast increase by the polarization of the light perpendicular to the plane of incidence on the resist. Arrangements are provided which influence the tangential polarization or the linear polarization adapted to the dipole illumination in the illuminating system and in the reduction objective.
摘要:
A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.
摘要:
A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.
摘要:
A method of optimizing an imaging performance of a projection exposure system is provided, wherein the projection exposure system includes an illumination optical system for illuminating a patterning structure and a projection optical system for imaging a region of the illuminated patterning structure onto a corresponding field. The method involves setting the field to a first exposure field, setting optical parameters of the projection exposure system to a first setting such that the imaging performance within the first exposure field is a first optimum performance, changing the field to a second exposure field, and changing the optical parameters to a second setting such that the imaging performance within the second exposure field is a second optimum performance.
摘要:
1. Method for patterning a substrate using multiple exposure.2.1. The invention relates to a method for patterning a substrate using exposure processes of an adjustable optical system, a multiple exposure being used for producing a structure image on the substrate.2.2. According to the invention, for at least one of the plurality of exposures, the imaging quality of the optical system is determined by means of a respective measurement step and at least one parameter of the optical system that influences the imaging quality is set depending on this.2.3. Use e.g. for the patterning of semiconductor wafers in microlithography projection exposure apparatuses.
摘要:
A method of optimizing an imaging performance of a projection exposure system is provided, wherein the projection exposure system includes an illumination optical system for illuminating a patterning structure and a projection optical system for imaging a region of the illuminated patterning structure onto a corresponding field. The method involves setting the field to a first exposure field, setting optical parameters of the projection exposure system to a first setting such that the imaging performance within the first exposure field is a first optimum performance, changing the field to a second exposure field, and changing the optical parameters to a second setting such that the imaging performance within the second exposure field is a second optimum performance.
摘要:
A measuring device for interferometric measurement of an optical imaging system that is provided for projecting a useful pattern, provided on a mask, into the image plane of the imaging system, includes a wavefront source for generating at least one wavefront traversing the imaging system; a diffraction grating, arrangeable downstream of the imaging system, for interacting with the wavefront reshaped by the imaging system; and a spatially resolving detector, assigned to the diffraction grating, for acquiring interferometric information. The wavefront source has at least one measuring pattern that is formed on the mask in addition to the useful pattern. The useful pattern may represent the structure of a layer of a semiconductor component in a specific fabrication step. The measuring pattern may be formed as a coherence-forming structure periodic in one or two dimensions.
摘要:
A method of determining at least one optical property of a projection exposure system is described, wherein the exposure system includes a beam delivery system having a light source for generating an exposure optical beam having light of a first wavelength (λ1) and a second wavelength (λ2), wherein a first ratio is defined as an intensity of light λ2 to an intensity of light λ1 in the exposure optical beam. The method includes supplying at least one measuring optical beam including light of at least λ1 to the projection optical system, detecting wavefronts having traversed the projection optical system, and determining an optical property in dependence of the detected wavefronts, wherein a second ratio of an intensity of light of λ2 to an intensity of light of λ1 in the measuring optical beam being incident on the detector of the wavefront detection system is less than the first ratio.