公开(公告)号：US20170285486A1

公开(公告)日：2017-10-05

申请号：US15628611

申请日：2017-06-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yibing M. WANG ,  Duhyun LEE

IPC: G03F7/20 ,  G02F1/017 ,  G02F1/01

CPC classification number: G03F7/70291 ,  G02F1/0121 ,  G02F1/017

Abstract: MQW devices, IC chips and methods may be used in semiconductor lithography patterning systems. An MQW device includes an array of pixels that have transmission elements and associated support circuits. The support circuits have preliminary memory cells and final memory cells. The final memory cells store transmittance values that control transmittances of the associated transmission elements. This way, exposure of a target with a lithography system for purposes of patterning the target may be performed through the transmission elements according to the controlled transmittances, while subsequent transmittance values are being received by the preliminary memory cells from memory banks. The exposure of the target therefore needs to pause for less time, in order to wait for the MQW device to be refreshed with the subsequent transmittance values. Accordingly the whole semiconductor lithography patterning system may operate faster and thus have more throughput.

公开(公告)号：US20160103234A1

公开(公告)日：2016-04-14

申请号：US14808381

申请日：2015-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byungkyu LEE ,  Duhyun LEE ,  Jaechul PARK

IPC: G01T1/24

CPC classification number: G01T1/247 ,  G01T1/24 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14676

Abstract: An X-ray detector may comprise: a substrate; a plurality of pixel electrodes on the substrate; a photoconductor covering the plurality of pixel electrodes; and/or a common electrode on the photoconductor. The photoconductor may comprise: at least two photoconductor layers; and/or a current resistance layer, between the at least two photoconductor layers, configured to reduce current flow between the at least two photoconductor layers. An X-ray detector may comprise: a plurality of photoconductor layers; and/or a current resistance layer, between the plurality of photoconductor layers, configured to reduce current flow between the plurality of photoconductor layers.

Abstract translation: X射线检测器可以包括：基底; 基板上的多个像素电极; 覆盖所述多个像素电极的感光体; 和/或光电导体上的公共电极。 光电导体可以包括：至少两个光电导体层; 和/或所述至少两个光电导体层之间的电流电阻层，被配置为减少所述至少两个光电导体层之间的电流。 X射线检测器可以包括：多个感光体层; 和/或当前电阻层之间的多个光电导体层之间的电流流动。