中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

82 records (took 0.023 seconds)

    IMAGE SENSORS AND ELECTRONIC DEVICES
    56.
    发明申请
    IMAGE SENSORS AND ELECTRONIC DEVICES 审中-公开

    公开(公告)号：US20190245008A1

    公开(公告)日：2019-08-08

    申请号：US16167655

    申请日：2018-10-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gae Hwang LEE ,  Dong-Seok LEEM ,  Kwang Hee LEE ,  Sung Young YUN ,  Yong Wan JIN

    IPC: H01L27/30 ,  G02B5/20 ,  H01L51/44

    CPC classification number: H01L27/307 ,  H01L27/14621 ,  H01L27/14649 ,  H01L27/14667 ,  H01L51/0046

    Abstract: An image sensor may include a photodiode within a semiconductor substrate and configured to sense light in an infrared wavelength spectrum of light, a photoelectric conversion device on the semiconductor substrate and configured to sense light in a visible wavelength spectrum of light, and a filtering element configured to selectively transmit at least a portion of the infrared wavelength spectrum of light and the visible wavelength spectrum of light. The filtering element may include a plurality of color filters on the photoelectric conversion device. The photoelectric conversion device may include a pair of electrodes facing each other and a photoelectric conversion layer between the pair of electrodes and configured to selectively absorb light in a visible wavelength spectrum of light. The filtering element may be between the semiconductor substrate and the photoelectric conversion device and may selectively absorb the infrared light and selectively transmit the visible light.

    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME
    58.
    发明申请
    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME 有权
    图像传感器和电子设备，包括它们

    公开(公告)号：US20170053958A1

    公开(公告)日：2017-02-23

    申请号：US15160288

    申请日：2016-05-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gae Hwang LEE ,  Seon-Jeong LIM ,  Yong Wan JIN

    IPC: H01L27/146

    CPC classification number: H01L27/14621 ,  H01L27/14643 ,  H01L27/14647 ,  H01L27/302 ,  H01L27/307 ,  H01L31/101 ,  H01L31/1013

    Abstract: An image sensor includes a first light detecting device configured to selectively sense or absorb first visible light, a second light detecting device configured to selectively sense or absorb second visible light having a longer wavelength region than the first visible light, and a third light detecting device on the first light detecting device and the second light detecting device. The first light detecting device has one of a maximum transmission wavelength and a maximum absorption wavelength less than about 440 nm, the second light detecting device has one of a maximum transmission wavelength and a maximum absorption wavelength greater than about 630 nm, and the third light detecting device is configured to selectively sense or absorb third visible light having a wavelength region between the first visible light and the second visible light.

    Abstract translation: 图像传感器包括被配置为选择性地感测或吸收第一可见光的第一光检测装置，被配置为选择性地感测或吸收具有比第一可见光更长的波长区域的第二可见光的第二光检测装置，以及第三光检测装置 在第一光检测装置和第二光检测装置上。 第一光检测装置具有小于约440nm的最大透射波长和最大吸收波长中的一个，第二光检测装置具有大于约630nm的最大透射波长和最大吸收波长中的一个，并且第三光 检测装置被配置为选择性地感测或吸收具有在第一可见光和第二可见光之间的波长区域的第三可见光。

    ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR
    59.
    发明申请
    ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR 有权
    有机光电器件和图像传感器

    公开(公告)号：US20170005142A1

    公开(公告)日：2017-01-05

    申请号：US15156438

    申请日：2016-05-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gae Hwang LEE ,  Sung Young YUN ,  Yong Wan JIN

    IPC: H01L27/30 ,  H01L51/42 ,  H01L51/44

    CPC classification number: H01L27/307 ,  H01L51/0046 ,  H01L51/0053 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0062 ,  H01L51/4253 ,  H01L51/441 ,  Y02E10/549

    Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a first region closest to the first electrode, the first region having a first composition ratio (p1/n1) of a p-type semiconductor relative to an n-type semiconductor, a second region closest to the second electrode, the second region having a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor, and a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p3/n3) of the p-type semiconductor relative to the n-type semiconductor that is greater or less than the first composition ratio (p1/n1) and the second composition ratio (p2/n2).

    Abstract translation: 有机光电子器件包括彼此面对的第一电极和第二电极以及第一电极和第二电极之间的光吸收层，并且包括最靠近第一电极的第一区域，第一区域具有第一组成比（p1 / n1）相对于n型半导体的第二区域，第二区域具有p型半导体相对于n型半导体的第二组成比（p2 / n2） 以及第一区域和第二区域之间的厚度方向上的第三区域，第三区域具有p型半导体相对于n型半导体的第三组成比（p3 / n3）大于或等于 小于第一组成比（p1 / n1）和第二组成比（p2 / n2）。

Patent Agency Ranking