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103 条记录 (耗时 0.028 秒)

    Production management system
    51.
    发明授权
    Production management system 失效
    生产管理系统

    公开(公告)号：US5088045A

    公开(公告)日：1992-02-11

    申请号：US460027

    申请日：1990-01-02

    申请人： Chikafumi Shimanaka ,  Shinzo Urushidani ,  Michio Fujinuma ,  Hiroshi Hamano ,  Shinji Imai

    发明人： Chikafumi Shimanaka ,  Shinzo Urushidani ,  Michio Fujinuma ,  Hiroshi Hamano ,  Shinji Imai

    IPC分类号： G05B19/418

    CPC分类号： G05B19/41875 ,  G05B19/41835 ,  G05B2219/31027 ,  G05B2219/32005 ,  G05B2219/32178 ,  G05B2219/32214 ,  Y02P90/04 ,  Y02P90/12 ,  Y02P90/18 ,  Y02P90/22

    摘要： A production management system controls a production line having a plurality of assembling/machining stations including pieces of production equipment such as nut runners. The production management system includes a computer for supplying control information to control the pieces of production equipment, a first information network for transmitting the control information from the computer to the assembling/machining stations, and a second information network for transmitting information indicating results of operation in the assembling/machining stations to downstream assembling/machining stations to allow defective portions of workpieces to be repaired in the subsequent assembling/machining stations. The first information network comprises a plurality of separate networks associated respectively with divided portions of the production line.

    摘要翻译： 生产管理系统控制具有多个组装/加工站的生产线，所述组装/加工站包括诸如螺母浇道的生产设备。 生产管理系统包括用于提供控制信息以控制生产设备的计算机，用于将控制信息从计算机发送到组装/加工站的第一信息网络，以及用于发送指示操作结果的信息的第二信息网络 在组装/加工站到下游组装/加工站，以允许在随后的组装/加工站中修复工件的缺陷部分。 第一信息网络包括分别与生产线的分割部分相关联的多个单独的网络。

    Radiation detecting apparatus and radiation image capturing system
    52.
    发明授权
    Radiation detecting apparatus and radiation image capturing system 有权
    辐射检测装置和放射线图像捕获系统

    公开(公告)号：US08212219B2

    公开(公告)日：2012-07-03

    申请号：US12585431

    申请日：2009-09-15

    申请人： Keiji Tsubota ,  Yasunori Ohta ,  Naoyuki Nishino ,  Yutaka Yoshida ,  Eiichi Kito ,  Shinji Imai ,  Yasuhiro Seto

    发明人： Keiji Tsubota ,  Yasunori Ohta ,  Naoyuki Nishino ,  Yutaka Yoshida ,  Eiichi Kito ,  Shinji Imai ,  Yasuhiro Seto

    IPC分类号： G01T1/24

    CPC分类号： G01T1/00 ,  A61B6/4494 ,  A61B6/548

    摘要： A radiation detecting apparatus includes a radiation conversion panel for detecting radiation that has passed through a subject and converting the detected radiation into radiation image information, and a casing for storing the radiation conversion panel as a roll when the subject is not being irradiated with radiation. When the subject is irradiated with radiation, the radiation conversion panel stored as a roll in the casing is unrolled and pulled out of the casing, and the radiation conversion panel is extended flatwise against the subject.

    摘要翻译： 辐射检测装置包括：辐射转换面板，用于检测已经通过被检体的辐射并将检测到的辐射转换为放射线图像信息;以及壳体，用于当被摄体不被辐射照射时将辐射转换面板存储为卷。 当用辐射照射对象时，作为卷筒存储在壳体中的辐射转换面板被展开并从壳体中拉出，并且辐射转换面板相对于被摄体平坦地延伸。

    Thin film field effect transistor
    53.
    发明授权
    Thin film field effect transistor 有权
    薄膜场效应晶体管

    公开(公告)号：US08203143B2

    公开(公告)日：2012-06-19

    申请号：US12538891

    申请日：2009-08-11

    申请人： Shinji Imai

    发明人： Shinji Imai

    IPC分类号： H01L29/12

    CPC分类号： H01L29/7869 ,  H01L29/78696

    摘要： A thin film field effect transistor has at least a gate electrode 2, a gate insulating layer 3, an active layer 4, a source electrode 5-1 and a drain electrode 5-2 on a substrate 1. The active layer includes an amorphous oxide semiconductor including at least In and Zn, a first interface layer 61 is disposed between the gate insulating layer and the active layer such that it is adjacent to at least the active layer, and a second interface layer is disposed on the opposite side of the active layer with respect to the first interface layer such that it is adjacent to the active layer. A content of Ga or Al in the amorphous oxide semiconductor of each of the first interface layer and the second interface layer is higher than a content of Ga or Al in the amorphous oxide semiconductor of the active layer.

    摘要翻译： 薄膜场效应晶体管在基板1上至少具有栅极电极2，栅极绝缘层3，有源层4，源极电极5-1和漏极电极5-2。有源层包括无定形氧化物 包括至少In和Zn的半导体，第一界面层61设置在栅极绝缘层和有源层之间，使得其与至少有源层相邻，并且第二界面层设置在活性物体的相对侧上 层相对于第一界面层，使得其与有源层相邻。 第一界面层和第二界面层各自的非晶形氧化物半导体中的Ga或Al的含量高于有源层的无定形氧化物半导体中的Ga或Al的含量。

    Thin film transistor, active matrix substrate, and image pickup device
    55.
    发明授权
    Thin film transistor, active matrix substrate, and image pickup device 有权
    薄膜晶体管，有源矩阵基板和图像拾取装置

    公开(公告)号：US08134151B2

    公开(公告)日：2012-03-13

    申请号：US12538890

    申请日：2009-08-11

    申请人： Shinji Imai

    发明人： Shinji Imai

    IPC分类号： H01L27/144

    CPC分类号： H01L29/7869 ,  H01L27/14676 ,  H01L29/4908 ,  H01L29/78636 ,  H01L29/78648

    摘要： A thin film transistor including: source and drain electrodes, an active layer that contacts the source and drain electrodes and contains an oxide semiconductor, a gate electrode that controls current flowing between the source and drain electrodes via the active layer, a first insulating film that separates the gate electrode from the source and drain electrodes and the active layer, a bias electrode that is arranged at the opposite side of the active layer from the gate electrode, and has an electric potential fixed independently from the gate electrode, and a second insulating film that separates the bias electrode from the source and drain electrodes and the active layer.

    摘要翻译： 一种薄膜晶体管，包括：源极和漏极，接触源极和漏极并且包含氧化物半导体的有源层，经由有源层控制在源极和漏极之间流动的电流的栅电极;第一绝缘膜， 将栅电极与源电极和漏极以及有源层分离，偏置电极设置在与栅电极相对的有源层的相对侧，并具有独立于栅电极固定的电位，第二绝缘 将偏置电极与源极和漏极以及有源层分离的膜。

    Thin film field effect transistor with amorphous oxide active layer and display using the same
    56.
    发明授权
    Thin film field effect transistor with amorphous oxide active layer and display using the same 有权
    具有无定形氧化物活性层的薄膜场效应晶体管和使用其的显示器

    公开(公告)号：US07982216B2

    公开(公告)日：2011-07-19

    申请号：US12292069

    申请日：2008-11-12

    申请人： Shinji Imai

    发明人： Shinji Imai

    IPC分类号： H01L29/12

    CPC分类号： H01L29/7869 ,  H01L29/78696

    摘要： A TFT is provided which includes, on a substrate, at least a gate electrode, a gate insulating layer, an active layer containing an amorphous oxide semiconductor, a source electrode, and a drain electrode, wherein a carrier concentration of the active layer is 3×1017 cm−3 or more and a film thickness of the active layer is 0.5 nm or more and less than 10 nm. A TFT is provided which has a low OFF current and a high ON-OFF ratio, and is improved in environmental temperature dependency. Also, a display using the TFT is provided.

    摘要翻译： 提供一种TFT，其在基板上至少包括栅电极，栅极绝缘层，含有非晶氧化物半导体的有源层，源电极和漏电极，其中有源层的载流子浓度为3 ×1017cm-3以上，活性层的膜厚为0.5nm以上且小于10nm。 提供了具有低截止电流和高ON-OFF比的TFT，并且提高了环境温度依赖性。 此外，提供使用TFT的显示器。

    Planar radiation detector using radiation-induced-charge conversion film of amorphous selenium
    57.
    发明授权
    Planar radiation detector using radiation-induced-charge conversion film of amorphous selenium 有权
    使用无定形硒的辐射诱导电荷转换膜的平面辐射检测器

    公开(公告)号：US07745796B2

    公开(公告)日：2010-06-29

    申请号：US12046088

    申请日：2008-03-11

    申请人： Shinji Imai ,  Tomomasa Sato

    发明人： Shinji Imai ,  Tomomasa Sato

    IPC分类号： H01L27/142

    CPC分类号： G01T1/24 ,  G03G5/08207 ,  H01L31/0272 ,  H01L31/085

    摘要： In a planar radiation detector having a substrate; a charge-collection electrode; a radiation-induced-charge conversion film formed mainly of amorphous selenium; and an upper electrode which transmits radiation, or in a planar radiation detector having a substrate; a charge-collection electrode; a light-induced-charge conversion film which is formed mainly of amorphous selenium and generates electric charge when the light-induced-charge conversion film is irradiated with visible light which has passed through an upper electrode; the upper electrode which transmits the visible light emitted from a fluorescent layer; and the fluorescent layer formed of a fluorescent material which converts a radiation carrying image information into the visible light, the radiation-induced-charge conversion film or the light-induced-charge conversion film is formed of amorphous selenium or amorphous selenium alloy and has a residual oxygen concentration of 35 ppm or lower.

    摘要翻译： 在具有基板的平面放射线检测器中; 电荷收集电极; 主要由无定形硒形成的辐射诱导电荷转换膜; 以及透射辐射的上电极，或具有基板的平面辐射检测器; 电荷收集电极; 主要由非晶硒形成的光诱导电荷转换膜，在通过上电极的可见光照射光诱导电荷转换膜时产生电荷; 透射从荧光层发射的可见光的上电极; 由将辐射携带图像信息转换成可见光的荧光体形成的荧光层，辐射诱导电荷转换膜或光诱导电荷转换膜由非晶硒或非晶硒合金形成，并具有 残留氧浓度为35ppm以下。

    GAS HYDRATE COMPRESSION MOLDING MACHINE
    60.
    发明申请
    GAS HYDRATE COMPRESSION MOLDING MACHINE 有权
    气体压缩成型机

    公开(公告)号：US20100062094A1

    公开(公告)日：2010-03-11

    申请号：US12450448

    申请日：2008-03-28

    申请人： Kenji Watanabe ,  Kiyoaki Suganoya ,  Takahiro Yoshida ,  Kenji Ogawa ,  Shigeru Nanbara ,  Shinji Imai

    发明人： Kenji Watanabe ,  Kiyoaki Suganoya ,  Takahiro Yoshida ,  Kenji Ogawa ,  Shigeru Nanbara ,  Shinji Imai

    IPC分类号： B29C43/56

    CPC分类号： C10L3/10 ,  B01J2/22 ,  C10L3/108 ,  C10L5/363

    摘要： A molding machine for production of gas hydrate pellets under a high pressure in gas hydrate forming conditions, which is inexpensive through minimizing of the use of expensive mechanical seal. The molding machine comprises two forming rolls each fitted to a rotary shaft whose both ends are supported by bearings; a drive unit for rotating the forming rolls; a screw transfer unit for supplying powder to the forming rolls; and a high-pressure vessel, wherein the bearings, the rotary shaft and the forming rolls are all disposed in the high-pressure vessel.

    摘要翻译： 一种用于在气体水合物形成条件下在高压下生产天然气水合物丸粒的成型机，其通过最小化昂贵的机械密封的使用是便宜的。 成型机包括两个成形辊，每个成形辊安装在旋转轴上，其两端由轴承支撑; 用于旋转成形辊的驱动单元; 用于向成形辊供给粉末的螺旋转印单元; 和高压容器，其中轴承，旋转轴和成形辊都设置在高压容器中。