公开(公告)号：US20090017389A1

公开(公告)日：2009-01-15

申请号：US11825750

申请日：2007-07-09

Applicant: Nancy Belknap ,  Jennifer Hwang ,  Robert Altavela

Inventor： Nancy Belknap ,  Jennifer Hwang ,  Robert Altavela

IPC: G03G15/02

CPC classification number: G03G5/144 ,  G03G5/0539 ,  G03G5/0564 ,  G03G5/0567 ,  G03G5/0614 ,  G03G5/0696 ,  G03G5/08207

Abstract: The presently disclosed embodiments are directed to charge transport layers useful in electrostatography. More particularly, the embodiments pertain to an improved electrostatographic imaging member having a specific photoreceptor material package comprising a thick conductive undercoat layer, a charge generation layer, a long life charge transport layer, and an optional overcoat layer.

Abstract translation: 目前公开的实施例涉及用于静电放电的电荷传输层。 更具体地，实施例涉及具有特定光感受器材料封装的改进的静电摄影成像构件，其包括厚的导电底涂层，电荷产生层，长寿命电荷传输层和任选的外涂层。

公开(公告)号：US20080224049A1

公开(公告)日：2008-09-18

申请号：US12046088

申请日：2008-03-11

Applicant: Shinji IMAI ,  Tomomasa Sato

Inventor： Shinji IMAI ,  Tomomasa Sato

IPC: G01T1/24

CPC classification number: G01T1/24 ,  G03G5/08207 ,  H01L31/0272 ,  H01L31/085

Abstract: In a planar radiation detector having a substrate; a charge-collection electrode; a radiation-induced-charge conversion film formed mainly of amorphous selenium; and an upper electrode which transmits radiation, or in a planar radiation detector having a substrate; a charge-collection electrode; a light-induced-charge conversion film which is formed mainly of amorphous selenium and generates electric charge when the light-induced-charge conversion film is irradiated with visible light which has passed through an upper electrode; the upper electrode which transmits the visible light emitted from a fluorescent layer; and the fluorescent layer formed of a fluorescent material which converts a radiation carrying image information into the visible light, the radiation-induced-charge conversion film or the light-induced-charge conversion film is formed of amorphous selenium or amorphous selenium alloy and has a residual oxygen concentration of 35 ppm or lower.

Abstract translation: 在具有基板的平面放射线检测器中; 电荷收集电极; 主要由无定形硒形成的辐射诱导电荷转换膜; 以及透射辐射的上电极，或具有基板的平面辐射检测器; 电荷收集电极; 主要由非晶硒形成的光诱导电荷转换膜，在通过上电极的可见光照射光诱导电荷转换膜时产生电荷; 透射从荧光层发射的可见光的上电极; 由将辐射携带图像信息转换成可见光的荧光体形成的荧光层，辐射诱导电荷转换膜或光诱导电荷转换膜由非晶硒或非晶硒合金形成，并具有 残留氧浓度为35ppm以下。

公开(公告)号：US6124072A

公开(公告)日：2000-09-26

申请号：US442825

申请日：1999-11-18

Applicant: Akio Arai ,  Makoto Fujii ,  Kazuya Adachi

Inventor： Akio Arai ,  Makoto Fujii ,  Kazuya Adachi

IPC: G03G5/05 ,  G03G5/08 ,  G03G5/082

CPC classification number: G03G5/08207

Abstract: There is disclosed a photoconductor for use in an electrophotographic apparatus. The photoconductor includes a conductive substrate and a photoconductive layer formed on the conductive substrate. The photoconductive layer includes an As.sub.2 Se.sub.3 alloy containing 36% to 40% by weight of As and doped with 1,000 to 20,000 parts per million of iodine. A method of manufacturing a photoconductor is also disclosed, which includes forming a photoconductive layer by vapor deposition on a conductive substrate and thermally treating the photoconductive layer at a temperature between 100 and 200 degrees Celsius for a period between 30 and 80 minutes. Advantageously, the photoconductor of the present invention is able to provide high quality images at high printing speeds.

Abstract translation: 公开了用于电子照相设备中的光电导体。 光电导体包括导电衬底和形成在导电衬底上的光电导层。 光电导层包括含有36重量％至40重量％的As并掺杂有1,000至20,000份/百万份碘的As 2 Se 3合金。 还公开了一种制造光电导体的方法，其包括通过气相沉积在导电基底上形成光电导层并在100至200摄氏度的温度下热处理光电导层30至80分钟。 有利地，本发明的光电导体能够以高打印速度提供高质量的图像。

公开(公告)号：US5532102A

公开(公告)日：1996-07-02

申请号：US413667

申请日：1995-03-30

Applicant: Philip H. Soden ,  Arnold L. Pundsack

Inventor： Philip H. Soden ,  Arnold L. Pundsack

IPC: C23C14/24 ,  G03G5/082 ,  G03G17/04 ,  G03G17/10 ,  C23C14/00

CPC classification number: G03G5/082 ,  C23C14/243 ,  G03G17/04 ,  G03G17/10 ,  G03G5/08207

Abstract: Disclosed is an apparatus for evaporation of a vacuum evaporatable material onto a substrate, said apparatus comprising (a) a walled container for the vacuum evaporatable material having a plurality of apertures in a surface thereof, said apertures being configured so that the vacuum evaporatable material is uniformly deposited onto the substrate; and (b) a source of heat sufficient to effect evaporation of the vacuum evaporatable material from the container through the apertures onto the substrate, wherein the surface of the container having the plurality of apertures therein is maintained at a temperature equal to or greater than the temperature of the vacuum evaporatable material.

Abstract translation: 公开了一种用于将真空可蒸发材料蒸发到基底上的装置，所述装置包括（a）用于真空蒸发材料的壁容器，其具有在其表面中的多个孔，所述孔构造成使得真空可蒸发材料为 均匀地沉积在基底上; 和（b）足以使真空蒸发材料从容器通过孔蒸发到基底上的热源，其中具有多个孔的容器的表面保持在等于或大于 真空蒸发材料的温度。

公开(公告)号：US5085959A

公开(公告)日：1992-02-04

申请号：US391475

申请日：1989-08-09

Applicant: Urabe Kazuyuk

Inventor： Urabe Kazuyuk

IPC: G03G5/08 ,  G03G5/082

CPC classification number: G03G5/08207 ,  G03G5/082

Abstract: An electrophotographic photoreceptor having a good printing quality can be provided by a photoreceptor comprising a charge transporation layer composed of a photosensitive material containing a hole mobility enhancing material. Thus, in accordance with an emboidment of the invention, it is possible to rapidly attenuate negative charge and to obtain a photoreceptor having a good printing quality by adding a hole mobility enhancing material to the CTL without producing a difference in print density between regions of the photoreceptor between sheets of paper and covered with a sheet. Some metal oxides and acids, such as WO.sub.2, WO.sub.3, MnO.sub.4, H.sub.3 PO.sub.3, H.sub.2 SO.sub.3 and HAsO.sub.2, are found to have a hole mobility enhancing effect to a CTL of a selenium alloy. Some metal elements, such as Sn, Co, Pb, Fe, Cu, Hg, Ag and Ce, are also found to have a hole mobility enhancing effect to the CTL. Finally, halogen elements are also found to have a hole mobility enhancing effect to the CTL.

Abstract translation: 具有良好印刷质量的电子照相感光体可由包含由含有空穴迁移率增强材料的感光材料构成的电荷转运层的感光体提供。 因此，根据本发明的实施例，可以通过向CTL添加空穴迁移率增强材料来快速衰减负电荷并获得具有良好印刷质量的感光体，而不产生印刷密度差异 感光片在纸张之间并用片材覆盖。 发现一些金属氧化物和酸如WO2，WO3，MnO4，H3PO3，H2SO3和HAsO2对硒合金的CTL具有空穴迁移率增强作用。 还发现一些金属元素，例如Sn，Co，Pb，Fe，Cu，Hg，Ag和Ce，对CTL具有空穴迁移率增强作用。 最后，还发现卤素元素对CTL具有空穴迁移率增强作用。

公开(公告)号：US5035857A

公开(公告)日：1991-07-30

申请号：US555215

申请日：1990-07-20

Applicant: Lawrence E. Kowalczyk ,  Santokh S. Badesha ,  Paul F. Zukoski ,  Monroe J. Hordon ,  Steven M. Sterling ,  Barry A. Lees ,  Frederick A. Elder ,  Roger W. LaForce

Inventor： Lawrence E. Kowalczyk ,  Santokh S. Badesha ,  Paul F. Zukoski ,  Monroe J. Hordon ,  Steven M. Sterling ,  Barry A. Lees ,  Frederick A. Elder ,  Roger W. LaForce

IPC: C01B19/00 ,  C01B19/04 ,  G03G5/082

CPC classification number: B82Y30/00 ,  C01B19/007 ,  C01B19/04 ,  G03G5/08207 ,  C01P2002/70 ,  C01P2004/64 ,  C01P2004/84 ,  C01P2006/80

Abstract: A process for the preparation of chalcogenide alloys which comprises crystallizing a chalcogenide alloy, grinding and pelletizing the crystallized product, and evaporating the alloy on, for example, a supporting substrate to form a photoreceptor.

Abstract translation: 制备硫族化合物的方法，其包括使硫族化物合金结晶化，研磨和造粒结晶产物，并将合金蒸发在例如支撑基底上以形成感光体。

公开(公告)号：US5021310A

公开(公告)日：1991-06-04

申请号：US368237

申请日：1989-06-16

Applicant: Seizou Kitagawa

Inventor： Seizou Kitagawa

IPC: G03G5/08 ,  G03G5/043 ,  G03G5/082

CPC classification number: G03G5/0433 ,  G03G5/08207

Abstract: An electrophotographic photoreceptor is provided comprising, in sequence:a) a conductive base;b) a carrier transport layer;c) a carrier generation layer comprising a selenium alloy;d) a carrier injection regulating layer having a band gap energy greater than that of the carrier generation layer and comprising selenium and up to about 10 weight % arsenic;e) a thermal expansion relieving layer comprising aresenic and selenium; andf) a surface protective layer comprising arsenic and selenium in an atomic ratio of approximately 2 to 3;wherein the arsenic concentration in the thermal expansion relieving layer gradually increases from a concentration substantially equal to that of the carrier injection regulating layer on a face of the thermal expansion relieving layer adjacent to the carrier injection regulating layer to a concentration substantially equal to that of the surface protective layer on an opposite face of the thermal expansion relieving layer adjacent to the surface protective layer. This structure eliminates or reduces damage to the photoreceptor caused by thermal stress when the carrier generation layer and the carrier injection regulating layer have greater thermal expansion coefficients than the As.sub.2 Se.sub.3 of the surface protective layer.

Abstract translation: 提供电子照相感光体，其依次包括：a）导电性基体; b）载体传输层; c）载体产生层，其包含硒合金; d）载流子注入调节层，其带隙能量大于载流子发生层的带隙能量，并且包含硒和至多约10重量％的砷; e）包含砷和硒的热膨胀释放层; 和f）包含原子比为约2-3的砷和硒的表面保护层; 其特征在于，所述热膨胀缓和层中的砷浓度从与所述载流子注入调节层相邻的所述热膨胀缓和层的表面的载流子注入调节层的浓度基本上等于与所述载流子注入调节层的浓度基本相同的浓度， 在与表面保护层相邻的热膨胀解除层的相对面上的表面保护层。 当载体产生层和载体注入调节层比表面保护层的As2Se3具有更大的热膨胀系数时，该结构消除或减少了由热应力引起的感光体的损伤。

公开(公告)号：US4859411A

公开(公告)日：1989-08-22

申请号：US179193

申请日：1988-04-08

Applicant: Gerald H. Sweatman ,  Roy Hodgson ,  Robert H. Haste

Inventor： Gerald H. Sweatman ,  Roy Hodgson ,  Robert H. Haste

IPC: C01B19/04 ,  C23C14/06 ,  G03G5/082

CPC classification number: G03G5/08207 ,  C23C14/0623

Abstract: A process for controlling fractionation in selenium alloys comprising providing pellets of an alloy comprising amorphous selenium and an alloying component selected from the group consisting of tellurium, arsenic, and mixtures thereof, the particles having an average particle size between about 300 micrometers and about 3,000 micrometers, exposing the pellets to an ambient temperature of between about 114.degree. C. and about 190.degree. C. until an exotherm occurs in the pellets resulting in substantially complete crystallization between about 104.degree. C. and about 180.degree. C., grinding the pellets into fresh powder having an average particle size of less than about 200 micrometers, and compressing the fresh powder into fresh pellets having an average weight between about 50 mg and about 1000 mg. The resulting fresh pellets may be heated in a vacuum chamber to vacuum deposit the alloy onto a substrate.

公开(公告)号：US4770965A

公开(公告)日：1988-09-13

申请号：US946238

申请日：1986-12-23

Applicant: William D. Fender ,  Robert C. Speiser ,  Gerhard K. Kramer ,  Hans P. Ceelen

Inventor： William D. Fender ,  Robert C. Speiser ,  Gerhard K. Kramer ,  Hans P. Ceelen

IPC: G03G5/02 ,  G03G5/043 ,  G03G5/08 ,  G03G5/082 ,  G03G5/14 ,  G03G5/147

CPC classification number: G03G5/0436 ,  G03G5/08207 ,  G03G5/14708

Abstract: An electrophotographic imaging member comprising providing a conductive substrate, an alloy layer comprising selenium doped with arsenic having a thickness of between about 100 micrometers and about 400 micrometers, the alloy layer comprising between about 0.3 percent and about 2 percent by weight arsenic at the surface of the alloy layer facing away from the conductive substrate and comprising crystalline selenium having a thickness of from about 0.01 micrometer to about 1 micrometer contiguous to the conductive substrate, and a thin protective overcoating layer on the alloy layer, the overcoating layer having a thickness between about 0.05 micrometer and about 0.3 micrometer and comprising from about 0.5 percent to about 3 percent by weight nigrosine. This photoreceptor is prepared by providing a conductive substrate, cleaning the substrate, heating an alloy comprising selenium and from about 0.05 percent to about 2 percent by weight arsenic until from about 2 percent to about 90 percent by weight of the selenium in the alloy is crystallized, vacuum depositing the alloy on the substrate to form a vitreous photoconductive insulating layer having a thickness of between about 100 micrometers and about 400 micrometers containing between about 0.3 percent and about 2 percent by weight arsenic at the surface of the photoconductive insulating layer facing away from the conductive substrate, applying thin protective overcoating layer on the photoconductive insulating layer, the overcoating layer having a thickness between about 0.05 micrometer and about 0.3 micrometer and comprising from about 0.5 percent to about 3 percent by weight nigrosine, and heating the photoconductive insulating layer until only the selenium in the layer adjacent the substrate crystallizes to form a continuous substantially uniform crystalline layer having a thickness up to about one micrometer.

Abstract translation: 一种电子照相成像构件，包括提供导电基底，包含掺杂有砷的硒的合金层，其厚度为约100微米至约400微米，所述合金层包含在表面的约0.3重量％至约2重量％的砷 所述合金层背离所述导电基底并且包含结晶硒，所述结晶硒的厚度为所述导电基底的约0.01微米至约1微米，所述合金层上具有薄的保护性外涂层，所述外涂层的厚度介于约 0.05微米和约0.3微米，并且包含约0.5重量％至约3重量％的苯胺黑。 该感光体通过提供导电基底，清洁基底，加热包含硒的合金和约0.05％至约2％重量的砷直到合金中的硒的约2％至约90％重量被结晶 在该基片上真空沉积该合金以形成一层玻璃状光导电绝缘层，其厚度介于约100微米至约400微米之间，该光电导绝缘层的光电导绝缘层的表面上的砷含量为约0.3％至约2％ 所述导电衬底，在所述光电导绝缘层上施加薄的保护性外涂层，所述外涂层具有约0.05微米至约0.3微米的厚度，并且包含约0.5％至约3％重量的苯胺黑，并加热所述光电导绝缘层直到 只有硒层在相邻的层中 e衬底结晶以形成具有高达约1微米厚度的连续的基本上均匀的结晶层。

公开(公告)号：US4370399A

公开(公告)日：1983-01-25

申请号：US246605

申请日：1981-03-23

Applicant: Syamal K. Ghosh ,  Frank D. Kelly

Inventor： Syamal K. Ghosh ,  Frank D. Kelly

IPC: G03G5/082 ,  G03G5/04

CPC classification number: G03G5/08207

Abstract: An ambipolar electrophotographic plate and materials used in the manufacture thereof including a photoconductive layer formulated of selenium, selenium-arsenic alloy or selenium-arsenic-tellurium alloy containing indium as a dopant which extends the range for electrons without noticeable deterioration of the long range for holes.

Abstract translation: 一种双极电子照相板及其制造中使用的材料，包括由硒，硒 - 砷合金或硒 - 砷 - 碲合金配制的光电导层，其含有铟作为掺杂剂，其扩展了电子的范围，而孔的长距离不会明显恶化 。