Abstract:
Disclosed is a photomask, which has: a transparent substrate; and masking film which is selectively formed on the transparent substrate to provide a predetermined pattern composed of a transparent region and a masking region; wherein the transparent region comprises a first transparent region which is formed adjacent to the masking region and extends like a belt along the masking region and a second transparent region which lies sandwiching the first transparent region with the masking region, whereby a phase of exposure light through the first transparent region is advanced prior to that through the second transparent region.
Abstract:
In a method of forming a pattern, a photo-mask including a desired pattern is provided. A photo-sensitive resin film is spin-coated on a semiconductor substrate. Subsequently, the surface of the photo-sensitive resin film is changed to have a resistivity against a development solution. Next, light is illuminated to transmit the photo-mask. As a result, the resistivity of only the surface portion of the photo-sensitive resin film corresponding to the desired pattern is decreased based on the property of photo-sensitive resin film by the light having transmitted the photo-mask. Last, the photo-sensitive layer is developed with the development solution.