公开(公告)号：US5227861A

公开(公告)日：1993-07-13

申请号：US587114

申请日：1990-09-24

申请人： Seizi Nishizawa ,  Ryoichi Fukazawa ,  Tokuzi Takahashi ,  Ryo Hattori

发明人： Seizi Nishizawa ,  Ryoichi Fukazawa ,  Tokuzi Takahashi ,  Ryo Hattori

IPC分类号： G01B11/06

CPC分类号： G01B11/0675

摘要： An apparatus for and a method of evaluating a multilayer thin film of the present invention. An interference light beam in a predetermined wave number region is projected as a parallel beam onto a multilayer thin film sample and the interference light beam reflected by the sample is detected to find an interferogram. The interferogram is subject to Fourier transform, filtering and reverse Fourier transform so that a spatialgram is provided. Thereby the variation in incident angle of the light beam incident on the sample and in incident surface is reduced, and the spatialgram can be provided with accurate information of the multilayer thin film.

公开(公告)号：US4926432A

公开(公告)日：1990-05-15

申请号：US394059

申请日：1989-08-14

申请人： Ryo Hattori

发明人： Ryo Hattori

IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S5/24

CPC分类号： H01S5/2232 ,  H01S5/24 ,  H01S5/2235 ,  H01S5/2237

摘要： A semiconductor laser device having a double heterojunction structure disposed on a current blocking layer which is disposed on a convex ridge includes a buffer layer having a conductivity-type opposite that of the current blocking layer disposed between the current blocking layer and the double heterojunction structure. A current injection groove in the ridge penetrates the current blocking and buffer layers so that the lower cladding layer of the double heterojunction structure contacts the ridge. Therefore, a thin active layer may be produced using the liquid phase epitaxy ridge effect. The pn junction between the current blocking layer and the lower cladding layer is stabilized by the intervening buffer layer.

摘要翻译： 设置在设置在凸脊上的电流阻挡层上的具有双异质结结构的半导体激光器件包括具有与设置在电流阻挡层和双异质结结构之间的电流阻挡层相反的导电类型的缓冲层。 脊中的电流注入槽穿过电流阻挡层和缓冲层，使得双异质结结构的下包层接触脊。 因此，可以使用液相外延脊效应来制造薄的有源层。 电流阻挡层和下包层之间的pn结被中间缓冲层稳定。