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公开(公告)号:US5040044A
公开(公告)日:1991-08-13
申请号:US546813
申请日:1990-06-20
申请人: Masahiro Noguchi , Toshihiko Ibuka
发明人: Masahiro Noguchi , Toshihiko Ibuka
IPC分类号: H01L21/318 , H01L33/10 , H01L33/22 , H01L33/30 , H01L33/36
CPC分类号: H01L33/44 , H01L21/3185 , H01L33/0062 , H01L33/22
摘要: According to the present invention, roughness are formed on the surface of III-V group compound semiconductor to prevent total reflection, and SiNx film is formed on rough surface. This makes it possible to increase external quantum efficiency by surface roughness. Further, bond strength is increased because SiNx film is furnished on the roughness. As the result, the detachment of SiNx film is prevented, moisture resistant property is improved, and service life of LED is extended by preventing oxidation.
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公开(公告)号:US4957652A
公开(公告)日:1990-09-18
申请号:US259144
申请日:1988-10-18
IPC分类号: C09K5/04
CPC分类号: C09K5/044 , C09K5/045 , C09K2205/122 , C09K2205/41
摘要: A refrigerant comprising (1) dichlorotrifluoroethane and (2) at least one compound selected from the group consisting of chlorotetrafluoroethane, pentafluoroethane, tetrafluoroethane, 1-chloro-1,1-difluoroethane, 1,1,1-trifluoroethane and 1,1-difluoroethane.
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公开(公告)号:US4889586A
公开(公告)日:1989-12-26
申请号:US330587
申请日:1989-03-30
申请人: Masahiro Noguchi , Osamu Yamamoto
发明人: Masahiro Noguchi , Osamu Yamamoto
IPC分类号: H01L21/304 , H01L21/306 , H01L21/308
CPC分类号: H01L21/02024
摘要: The present invention polishes the surface of a substrate or epitaxial layer of Al.sub.x Ga.sub.1-x As wherein 0
摘要翻译: 本发明用包含碱性次氯酸碱水溶液或所述水溶液与碱金属碳酸盐的混合物的抛光液将0
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