公开(公告)号：US07883960B2

公开(公告)日：2011-02-08

申请号：US12409979

申请日：2009-03-24

申请人： Masatoshi Fukuda ,  Akiyoshi Hatada ,  Katsuaki Ookoshi ,  Kenichi Okabe ,  Tomonari Yamamoto

发明人： Masatoshi Fukuda ,  Akiyoshi Hatada ,  Katsuaki Ookoshi ,  Kenichi Okabe ,  Tomonari Yamamoto

IPC分类号： H01L21/8234 ,  H01L21/8244 ,  H01L21/8242 ,  H01L21/336

CPC分类号： H01L27/0629

摘要： A method of manufacturing a semiconductor device includes forming a conductive layer over a semiconductor substrate, selectively removing the conductive layer for forming a resistance element and a gate electrode, forming sidewall spacers over sidewalls of the remaining conductive layer, forming a first insulating film containing a nitrogen over the semiconductor substrate having the sidewall spacers, implanting ions in the semiconductor substrate through the first insulating film, forming a second insulating film containing a nitrogen over the first insulating film after implanting ions in the semiconductor substrate through the first insulating film, and selectively removing the first and the second insulating film such that at least a part of the first and the second insulating films is remained over the semiconductor substrate and over the conductive layer.

摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成导电层，选择性地去除用于形成电阻元件和栅电极的导电层，在剩余导电层的侧壁上形成侧壁间隔物，形成第一绝缘膜， 在具有侧壁间隔物的半导体衬底上的氮气，通过第一绝缘膜在半导体衬底中注入离子，在通过第一绝缘膜植入离子到半导体衬底中之后，在第一绝缘膜上形成含有氮的第二绝缘膜，并且选择性地 去除第一和第二绝缘膜，使得第一和第二绝缘膜的至少一部分保留在半导体衬底上并在导电层上方。

公开(公告)号：US06586794B2

公开(公告)日：2003-07-01

申请号：US09808188

申请日：2001-03-15

申请人： Shunji Nakamura ,  Akiyoshi Hatada ,  Yoshiaki Fukuzumi

发明人： Shunji Nakamura ,  Akiyoshi Hatada ,  Yoshiaki Fukuzumi

IPC分类号： H01L27108

CPC分类号： H01L28/92 ,  H01L27/10814 ,  H01L28/91

摘要： A semiconductor device having: a substrate having a first area and a second area surrounding the first area; an insulating film formed in the second area; electrodes formed above the surface of the substrate in the first area; dielectric films formed above the electrodes; and an opposing electrode formed above the dielectric films, wherein the shape of a side wall of the insulating film includes a shape reflecting the outer peripheral shape of a side wall of the electrode facing the side wall of the insulating film. The semiconductor device of high integration, low cost and high reliability can be realized.

摘要翻译： 一种半导体器件，具有：具有第一区域的基板和围绕所述第一区域的第二区域; 形成在第二区域中的绝缘膜; 形成在第一区域中的衬底表面上方的电极; 形成在电极上方的电介质膜; 以及形成在所述电介质膜上方的对置电极，其中所述绝缘膜的侧壁的形状包括反映所述电极的与所述绝缘膜的侧壁相对的侧壁的外周形状的形状。 可以实现高集成，低成本，高可靠性的半导体器件。