公开(公告)号：US06764885B2

公开(公告)日：2004-07-20

申请号：US10274062

申请日：2002-10-17

申请人： Zhisong Huang ,  Jaime Grunlan ,  Pi Chang

发明人： Zhisong Huang ,  Jaime Grunlan ,  Pi Chang

IPC分类号： H01L2184

CPC分类号： H01L51/0017 ,  H01L27/283 ,  H01L51/0004 ,  H01L51/0021 ,  H01L51/0516 ,  H01L51/0541 ,  H01L2251/105

摘要： A method for making a transistor device includes embossing to separate parts of a layer of electrically-conducting material, thereby separating a source and a drain. The gap between the source and the drain is filled with a semiconductor material, and the source and drain are operatively coupled to a gate to make a transistor. The electrically-conducting material and the semiconductor material may be deposited using printing processes, and the various steps in the method of making the device may be performed in one or more row-to-row operations.

摘要翻译： 制造晶体管器件的方法包括压印以分离导电材料层的部分，从而分离源极和漏极。 源极和漏极之间的间隙用半导体材料填充，并且源极和漏极可操作地耦合到栅极以制造晶体管。 导电材料和半导体材料可以使用印刷工艺进行沉积，并且制造该器件的方法中的各种步骤可以以一行或多行逐行操作进行。