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    A Recoilless Apparatus For Guns
    1.
    发明申请
    A Recoilless Apparatus For Guns 有权

    公开(公告)号：US20220120523A1

    公开(公告)日：2022-04-21

    申请号：US17100862

    申请日：2020-11-21

    申请人： Zhisong Huang

    发明人： Zhisong Huang

    IPC分类号： F41A1/10

    摘要： The invention relates to a recoilless apparatus for firing conventional cartridge-based ammunitions comprising a gun barrel and a compensating mass launch tube wherein a projectile is accelerated in one direction inside said gun barrel counterbalanced by a compensating mass accelerated in the opposite direction inside said launch tube thereby minimizing recoil and further providing means of automatic ammunition handling.

    ETCH WITH STRIATION CONTROL
    2.
    发明申请
    ETCH WITH STRIATION CONTROL 审中-公开
    ETCH与测度控制

    公开(公告)号：US20090121324A1

    公开(公告)日：2009-05-14

    申请号：US12349142

    申请日：2009-01-06

    申请人： S. M. Reza Sadjadi ,  Peter Cirigliano ,  Ji Soo Kim ,  Zhisong Huang ,  Eric A. Hudson

    发明人： S. M. Reza Sadjadi ,  Peter Cirigliano ,  Ji Soo Kim ,  Zhisong Huang ,  Eric A. Hudson

    IPC分类号： C23F1/08 ,  H01L29/00

    CPC分类号： H01L21/0273 ,  H01L21/0274 ,  H01L21/31144 ,  H01L21/76802 ,  Y10S438/942 ,  Y10S438/949

    摘要： A method for etching a feature in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have striations forming peaks and valleys. The striations of the sidewalls of the photoresist features are reduced. The reducing the striations comprises at least one cycle, wherein each cycle comprises etching back peaks formed by the striations of the sidewalls of the photoresist features and depositing on the sidewalls of the photoresist features. Features are etched into the etch layer through the photoresist features. The photoresist mask is removed.

    摘要翻译： 提供了蚀刻蚀刻层中的特征的方法。 在具有侧壁的光致抗蚀剂特征的蚀刻层上形成图案化的光致抗蚀剂掩模，其中光致抗蚀剂特征的侧壁具有形成峰和谷的条纹。 光致抗蚀剂特征的侧壁的条纹减小。 减小条纹包括至少一个周期，其中每个周期包括蚀刻由光致抗蚀剂特征的侧壁的条纹形成的峰，并沉积在光致抗蚀剂特征的侧壁上。 通过光致抗蚀剂特征将特征蚀刻到蚀刻层中。 去除光致抗蚀剂掩模。

    Pitch reduction
    4.
    发明申请
    Pitch reduction 有权
    节距减少

    公开(公告)号：US20070264830A1

    公开(公告)日：2007-11-15

    申请号：US11432194

    申请日：2006-05-10

    申请人： Zhisong Huang ,  Jeffrey Marks ,  S.M. Sadjadi

    发明人： Zhisong Huang ,  Jeffrey Marks ,  S.M. Sadjadi

    IPC分类号： H01L21/311 ,  H01L21/306

    CPC分类号： H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/32139

    摘要： A method for providing features in an etch layer is provided. A sacrificial patterned layer with sacrificial features is provided over an etch layer. Conformal sidewalls are formed in the sacrificial features, comprising at least two cycles of a sidewall formation process, wherein each cycle comprises a sidewall deposition phase and a sidewall profile shaping phase. Parts of the sacrificial patterned layer between conformal sidewalls are removed leaving the conformal sidewalls with gaps between the conformal sidewalls where parts of the sacrificial patterned layer were selectively removed. Features are etched in the etch layer using the conformal sidewalls as an etch mask, wherein the features in the etch layer are etched through the gaps between the conformal sidewalls where parts of the sacrificial patterned layer were selectively removed.

    摘要翻译： 提供了一种用于在蚀刻层中提供特征的方法。 在蚀刻层上提供具有牺牲特征的牺牲图案层。 保形侧壁形成在牺牲特征中，包括侧壁形成工艺的至少两个循环，其中每个循环包括侧壁沉积阶段和侧壁轮廓成形阶段。 除去共形侧壁之间的牺牲图案层的部分，留下保形侧壁，其中保形侧壁之间的间隙被选择性地去除牺牲图案层的部分。 使用保形侧壁作为蚀刻掩模在蚀刻层中蚀刻特征，其中蚀刻层中的特征被蚀刻通过牺牲图案层的部分被选择性去除的共形侧壁之间的间隙。

    Fast gas switching plasma processing apparatus
    5.
    发明申请
    Fast gas switching plasma processing apparatus 审中-公开
    快速气体开关等离子体处理装置

    公开(公告)号：US20070066038A1

    公开(公告)日：2007-03-22

    申请号：US11601293

    申请日：2006-11-17

    申请人： S.M. Sadjadi ,  Zhisong Huang ,  Jose Sam ,  Eric Lenz ,  Rajinder Dhindsa

    发明人： S.M. Sadjadi ,  Zhisong Huang ,  Jose Sam ,  Eric Lenz ,  Rajinder Dhindsa

    IPC分类号： H01L21/00 ,  C23F1/00 ,  H01L21/306 ,  C23C16/00 ,  H01L21/20

    CPC分类号： H01J37/32091 ,  H01J37/32155 ,  H01J37/3244 ,  H01J37/32449

    摘要： A plasma chamber with a plasma confinement zone with an electrode is provided. A gas distribution system for providing a first gas and a second gas is connected to the plasma chamber, wherein the gas distribution system can substantially replace one gas in the plasma zone with the other gas within a period of less than 1 s. A first frequency tuned RF power source for providing power to the electrode in a first frequency range is electrically connected to the at least one electrode wherein the first frequency tuned RF power source is able to minimize a reflected RF power. A second frequency tuned RF power source for providing power to the plasma chamber in a second frequency range outside of the first frequency range wherein the second frequency tuned RF power source is able to minimize a reflected RF power.

    摘要翻译： 提供具有电极等离子体限制区的等离子体室。 用于提供第一气体和第二气体的气体分配系统连接到等离子体室，其中气体分配系统可以在小于1秒的时间内基本上替换等离子体区域中的一种气体与另一种气体。 用于在第一频率范围内向电极提供功率的第一频率调谐RF电源电连接到至少一个电极，其中第一频率调谐的RF功率源能够最小化反射的RF功率。 用于在第一频率范围之外的第二频率范围内为等离子体室提供功率的第二频率调谐RF电源，其中第二频率调谐的RF功率源能够使反射的RF功率最小化。

    Gas distribution system having fast gas switching capabilities
    7.
    发明申请
    Gas distribution system having fast gas switching capabilities 有权
    气体分配系统具有快速的气体切换能力

    公开(公告)号：US20050241763A1

    公开(公告)日：2005-11-03

    申请号：US10835175

    申请日：2004-04-30

    申请人： Zhisong Huang ,  Jose Sam ,  Eric Lenz ,  Rajinder Dhindsa ,  Reza Sadjadi

    发明人： Zhisong Huang ,  Jose Sam ,  Eric Lenz ,  Rajinder Dhindsa ,  Reza Sadjadi

    IPC分类号： H01L21/306

    CPC分类号： C23C16/45561 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449

    摘要： A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows. The switching section preferably includes fast switching valves operable to quickly open and close to allow fast switching of the first and second gases, preferably without the occurrence of undesirable pressure surges or flow instabilities in the flow of either gas.

    摘要翻译： 提供了一种用于将诸如等离子体处理装置的等离子体处理室之类的不同气体成分供应到腔室的气体分配系统。 气体分配系统可以包括气体供应部分，流量控制部分和切换部分。 气体供应部分将第一和第二气体（通常为气体混合物）提供给流量控制部分，该控制部分控制第一和第二气体流到室的流动。 腔室可以包括多个区域，并且流量控制部分可以以期望的气体流量比将第一和第二气体供应到多个区域。 气体分配系统可以将第一和第二气体连续地供应到切换部分，并且切换部分可操作地切换第一和第二气体的流动，使得第一和第二处理气体中的一个被供应到腔室，而 第一和第二气体中的另一个被供应到旁路管线，然后切换气体流。 切换部分优选地包括快速切换阀，其可操作以快速打开和关闭，以允许第一和第二气体的快速切换，优选地，在任一气体的流动中不发生不期望的压力波动或流动不稳定性。

    Selective heat-transfer imaging system and method of using the same
    9.
    发明授权
    Selective heat-transfer imaging system and method of using the same 有权
    选择性传热成像系统及其使用方法

    公开(公告)号：US08350880B2

    公开(公告)日：2013-01-08

    申请号：US12669961

    申请日：2008-07-23

    申请人： Liviu Dinescu ,  Kai Li ,  Dong-Tsai Hseih ,  Ekaterina Vaskova ,  Haochuan Wang ,  Christine Dang ,  Zhisong Huang ,  James Johnson

    发明人： Liviu Dinescu ,  Kai Li ,  Dong-Tsai Hseih ,  Ekaterina Vaskova ,  Haochuan Wang ,  Christine Dang ,  Zhisong Huang ,  James Johnson

    IPC分类号： B41J33/14

    CPC分类号： B41M5/0256 ,  B41M5/0356 ,  B41M5/5263 ,  C09D11/16 ,  C09D11/30

    摘要： A heat-transfer imaging system and a method of using the same. The heat-transfer imaging system includes a heat-transfer sheet and an activating ink. The heat-transfer sheet and the activating ink are specially formulated so that only the areas of the heat-transfer sheet onto which the ink has been printed become adhesive under heat-transfer conditions. This effect may be achieved by designing the sheet to include an ink-receptive coating whose melting temperature is higher than that typically encountered during normal heat-transfer conditions and by formulating the activating ink to include a plasticizer that, when printed onto the ink-receptive coating, lowers the melting temperature of the ink-receptive coating sufficiently so that the modified melting temperature falls within the temperature range encountered during heat-transfer.

    摘要翻译： 传热成像系统及其使用方法。 传热成像系统包括热转印片和活化油墨。 传热片和活化油墨是特别配制的，使得仅在印刷油墨的热转印片材的区域在热转印条件下成为粘合剂。 这种效果可以通过将片材设计成包括其熔融温度高于正常热转移条件下通常遇到的油墨接受涂层并通过配制活化油墨来包括增塑剂来实现，该增塑剂当被印刷到油墨接收 涂层，使吸墨涂层的熔融温度充分降低，使得改性熔融温度落在传热期间遇到的温度范围内。

    FAST GAS SWITCHING PLASMA PROCESSING APPARATUS
    10.
    发明申请
    FAST GAS SWITCHING PLASMA PROCESSING APPARATUS 有权
    快速开关等离子体加工设备

    公开(公告)号：US20110281435A1

    公开(公告)日：2011-11-17

    申请号：US13189416

    申请日：2011-07-22

    申请人： S. M. Reza Sadjadi ,  Zhisong Huang ,  Jose Tong Sam ,  Eric H. Lenz ,  Rajinder Dhindsa

    发明人： S. M. Reza Sadjadi ,  Zhisong Huang ,  Jose Tong Sam ,  Eric H. Lenz ,  Rajinder Dhindsa

    IPC分类号： H01L21/311

    CPC分类号： H01J37/32091 ,  H01J37/32155 ,  H01J37/3244 ,  H01J37/32449

    摘要： A plasma chamber with a plasma confinement zone with an electrode is provided. A gas distribution system for providing a first gas and a second gas is connected to the plasma chamber, wherein the gas distribution system can substantially replace one gas in the plasma zone with the other gas within a period of less than 1 s. A first frequency tuned RF power source for providing power to the electrode in a first frequency range is electrically connected to the at least one electrode wherein the first frequency tuned RF power source is able to minimize a reflected RF power. A second frequency tuned RF power source for providing power to the plasma chamber in a second frequency range outside of the first frequency range wherein the second frequency tuned RF power source is able to minimize a reflected RF power.

    摘要翻译： 提供具有电极等离子体限制区的等离子体室。 用于提供第一气体和第二气体的气体分配系统连接到等离子体室，其中气体分配系统可以在小于1秒的时间内基本上替换等离子体区域中的一种气体与另一种气体。 用于在第一频率范围内向电极提供功率的第一频率调谐RF电源电连接到至少一个电极，其中第一频率调谐的RF功率源能够最小化反射的RF功率。 用于在第一频率范围之外的第二频率范围内为等离子体室提供功率的第二频率调谐RF电源，其中第二频率调谐的RF功率源能够使反射的RF功率最小化。